JPH04244975A - Inspection apparatus and method for semiconductor device - Google Patents

Inspection apparatus and method for semiconductor device

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Publication number
JPH04244975A
JPH04244975A JP3010535A JP1053591A JPH04244975A JP H04244975 A JPH04244975 A JP H04244975A JP 3010535 A JP3010535 A JP 3010535A JP 1053591 A JP1053591 A JP 1053591A JP H04244975 A JPH04244975 A JP H04244975A
Authority
JP
Japan
Prior art keywords
current
comparison voltage
spike
comparator
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3010535A
Other languages
Japanese (ja)
Inventor
Muneya Yoneshima
領弥 米島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP3010535A priority Critical patent/JPH04244975A/en
Publication of JPH04244975A publication Critical patent/JPH04244975A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To detect a spike current in a short time by computing a point at which a pulse width becomes zero based on a plurality of optional pulse widths to determine a peak value of the spike current. CONSTITUTION:A power 2 is connected to a comparison voltage input terminal of a comparator 5 which compares an amount of a spike current (voltage) with a comparison voltage equivalent to a comparison current value corresponding to the amount of the spike current through a resistance 4 for setting the comparison voltage while a constant current source 9 is connected thereto to obtain the comparison voltage with the constant current source 9 and the resistance 4 for setting the comparison voltage. To determine a peak value of the spike current, a computation by a linear approximation system based on a plurality of optional pulse widths obtained from an output of the comparator 5 varying a constant current source 9. This achieves inspection accurately solely depending on absolute accuracy of the resistance 3 for current detection, the resistance 4 for setting the comparison voltage and the constant power source 9 and in a short time by computation.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、半導体デバイスのスパ
イク電流の検査装置およびその検査方法に関するもので
ある。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a spike current testing apparatus for semiconductor devices and a testing method thereof.

【0002】0002

【従来の技術】スイッチング素子を内部に含んだ半導体
デバイスはその動作の過渡時には回路設計、配置配線上
あるいは回路タイミングのずれなどにより電源電流が瞬
間的に増加する短絡現象が起こる。この電流を一般にス
パイク電流と呼び、これが異常に大きい半導体デバイス
は短寿命であるため製造過程の検査によって取り除く必
要がある。
2. Description of the Related Art During transient operation of semiconductor devices containing switching elements, a short-circuit phenomenon occurs in which the power supply current instantaneously increases due to circuit design, layout and wiring, or deviations in circuit timing. This current is generally called a spike current, and a semiconductor device with an abnormally large current has a short lifespan, so it must be removed by inspection during the manufacturing process.

【0003】このスパイク電流を測定するため従来は図
3に示すスパイク電流検査装置を用いていた。図3にお
いて、電源2は電流検出抵抗3を介して被検査半導体デ
バイス1の電源端子に接続されており、被検査半導体デ
バイス1に流れるスパイク電流量は、電流検出抵抗3の
抵抗値Rsによって電圧降下を起こし、電源端子に電圧
の変化として現れる。一般に電流検出抵抗3の抵抗値R
sは、実際の半導体デバイスの動作に近くするため、低
い抵抗値が適している。スパイク電流量(電圧)は、コ
ンパレータ5の負入力端子5bに印加され、正入力端子
5aに印加された電圧と比較した結果を出力端子5cに
パルスとして出力する。
Conventionally, a spike current testing device shown in FIG. 3 has been used to measure this spike current. In FIG. 3, the power supply 2 is connected to the power supply terminal of the semiconductor device under test 1 via the current detection resistor 3, and the amount of spike current flowing through the semiconductor device under test 1 is determined by the resistance value Rs of the current detection resistor 3. This causes a drop and appears as a change in voltage at the power supply terminals. Generally, the resistance value R of current detection resistor 3
A low resistance value is suitable for s in order to approximate the operation of an actual semiconductor device. The spike current amount (voltage) is applied to the negative input terminal 5b of the comparator 5, and the result of comparison with the voltage applied to the positive input terminal 5a is output as a pulse to the output terminal 5c.

【0004】このコンパレータ5の入力端子5aには、
半導体測定装置6を構成する中央演算処理装置8(制御
・演算・判定を行う)によって任意の出力に調整可能な
定電圧源10が接続されており、スパイク電流量に対応
する比較電圧を自由に設定することができる。またコン
パレータ5の出力端子5cには、測定値の読み込み可能
なパルス測定器7が接続されており、中央演算処理装置
8によって出力パルス幅を測定することができる。
The input terminal 5a of this comparator 5 has
A constant voltage source 10 that can be adjusted to any output is connected to the central processing unit 8 (which performs control, calculation, and judgment) that constitutes the semiconductor measuring device 6, and can freely adjust the comparison voltage corresponding to the spike current amount. Can be set. Further, a pulse measuring device 7 capable of reading measurement values is connected to the output terminal 5c of the comparator 5, and the output pulse width can be measured by the central processing unit 8.

【0005】一般的なスパイク電流の形状は、過渡現象
が起こるタイミングのごく早い段階で一番大きな値を示
し、後は徐々に定常電流値に戻るくさび型をしているも
のがほとんどである。このスパイク電流のピーク値を求
めるには、定電圧源10による比較電圧を変化させ、そ
の都度パルス測定器7によりパルス幅を測定して行き、
パルス幅がちょうど0(ゼロ)になる点を探し出すこと
によって、スパイク電流のピーク値をそのときの定電圧
源10の設定電圧vから得る方法で行う。
[0005] In most cases, the shape of a typical spike current is wedge-shaped, showing the largest value very early in the timing of a transient phenomenon, and then gradually returning to a steady current value. To find the peak value of this spike current, change the comparison voltage from the constant voltage source 10 and measure the pulse width with the pulse measuring device 7 each time.
This is done by finding a point where the pulse width is exactly 0 (zero) and obtaining the peak value of the spike current from the set voltage v of the constant voltage source 10 at that time.

【0006】図4はコンパレータ5の入出力波形を示す
。5aがスパイク電流量に対応した比較電流値に当たる
比較電圧、5bがスパイク電流量(電圧)、5cが比較
結果のパルス出力である。定電圧源10より設定される
スパイク電流量に対応した比較電流値をIref 、電
源2の電圧をVs、定電圧源10による比較電圧をvと
すると、Iref は次式より得られる。
FIG. 4 shows input and output waveforms of the comparator 5. 5a is a comparison voltage corresponding to a comparison current value corresponding to the amount of spike current, 5b is the amount of spike current (voltage), and 5c is a pulse output of the comparison result. If Iref is the comparison current value corresponding to the spike current amount set by the constant voltage source 10, Vs is the voltage of the power supply 2, and v is the comparison voltage from the constant voltage source 10, Iref can be obtained from the following equation.

【0007】Iref =(Vs−v)/Rsまたスパ
イク電流のピーク値をIpeakとする。図4(a) 
のようにIref がIpeak以内であるときは、ス
パイク電流のIref 値を越える時間が、コンパレー
タ5の出力端子5cにパルス幅となって現れる。出力パ
ルス幅が測定できるこの段階ではIref =Ipea
kではありえないので、Iref の設定を定電圧源1
0の比較電圧vを変えることにより変えて行き、出力パ
ルス幅が0(ゼロ)になる点を探し続ける必要がある。
Iref = (Vs-v)/Rs Also, let Ipeak be the peak value of the spike current. Figure 4(a)
When Iref is within Ipeak, the time during which the spike current exceeds the Iref value appears as a pulse width at the output terminal 5c of the comparator 5. At this stage when the output pulse width can be measured, Iref = Ipea
Since this is not possible with k, set Iref to constant voltage source 1.
It is necessary to change it by changing the comparison voltage v of 0 and keep searching for the point where the output pulse width becomes 0 (zero).

【0008】図4(b) はIref =Ipeakと
なり、出力端子5c出力パルス幅がちょうど0(ゼロ)
になった状態を示す。この時点で次式が成立する。 Ipeak=Iref =(Vs−v)/Rsしたがっ
てこの時点の定電圧源10の設定電圧(比較電圧)vよ
りスパイク電流のピーク値(Ipeak)を求めること
ができる。
In FIG. 4(b), Iref = Ipeak, and the output pulse width of the output terminal 5c is exactly 0 (zero).
Indicates the current state. At this point, the following equation holds true. Ipeak=Iref=(Vs-v)/Rs Therefore, the peak value (Ipeak) of the spike current can be determined from the set voltage (comparison voltage) v of the constant voltage source 10 at this point.

【0009】[0009]

【発明が解決しようとする課題】しかし前述の従来のス
パイク電流検査装置では電流検出抵抗3の抵抗値Rsの
精度は比較的得易いが電源2の電圧Vsと定電圧源10
による比較電圧vの相対精度を精密に出すことは難しい
。 特にスパイク電流のピーク値自体通常はごく小さいもの
であり、電流検出抵抗値Rsも前述したように低い値が
好ましいので、コンパレータ5に入力されるスパイク電
流量による電圧の変化もピーク値でせいぜい数百mVに
とどまり、電源電圧Vsの絶対電圧に比べると1/10
0 程度の値になる。またスパイク電流のピーク値を求
める分解能もピーク値の1/100 程度必要となれば
電源2の電圧Vsと比較電圧vの相対精度は0.01%
程度を必要とする。
[Problems to be Solved by the Invention] However, in the conventional spike current testing device described above, the accuracy of the resistance value Rs of the current detection resistor 3 is relatively easy to obtain;
It is difficult to accurately determine the relative accuracy of the comparison voltage v. In particular, the peak value of the spike current itself is usually very small, and the current detection resistance value Rs is preferably a low value as described above, so the change in voltage due to the amount of spike current input to the comparator 5 is at most a few at the peak value. It remains at 100 mV, which is 1/10 compared to the absolute voltage of the power supply voltage Vs.
The value will be around 0. Also, if the resolution for determining the peak value of the spike current is about 1/100 of the peak value, the relative accuracy of the voltage Vs of the power supply 2 and the comparison voltage v is 0.01%.
It requires a degree.

【0010】このような高精度を維持するのは両電源装
置の経時変化と特に負荷変動による電源2の電圧Vsの
瞬間的な変動を含めると技術的に難しいという欠点があ
る。また従来のスパイク電流のピーク値を求める方法で
は、パルス幅が0(ゼロ)になる点を探し出すため、比
較電圧を変化した後にパルス幅を測定しその結果を認識
し0(ゼロ)でなければもう一度比較電圧を変化しパル
ス幅を測定する作業をくり返すので必要分解能を高くす
ればするほどピーク値が求まるまで時間がかかってしま
うという欠点もある。
[0010] There is a drawback that maintaining such high accuracy is technically difficult, considering temporal changes in both power supply devices and especially instantaneous fluctuations in the voltage Vs of the power supply 2 due to load fluctuations. In addition, in the conventional method of determining the peak value of spike current, in order to find the point where the pulse width becomes 0 (zero), the pulse width is measured after changing the comparison voltage and the result is recognized. Since the process of changing the comparison voltage and measuring the pulse width is repeated, there is also the disadvantage that the higher the required resolution, the longer it takes to find the peak value.

【0011】本発明は、上記問題を解決するもので、パ
ルス幅が0(ゼロ)になる点を複数の任意のパルス幅を
基にして演算により求めることにより、短時間で正確に
スパイク電流を検査できる検査装置および検査方法を提
供することを目的とするものである。
[0011] The present invention solves the above problem by calculating the point at which the pulse width becomes 0 (zero) based on a plurality of arbitrary pulse widths, thereby accurately calculating the spike current in a short time. The object of the present invention is to provide an inspection device and an inspection method that can perform inspection.

【0012】0012

【課題を解決するための手段】上記の課題を解決するた
めに、本発明の検査装置は、電源の一方は電流検出抵抗
と比較電圧設定用抵抗の一方にそれぞれ接続され、前記
電源の他方は接地され、前記電流検出抵抗の他方は被検
査半導体デバイスの電源端子に接続されるとともにコン
パレータの一方の入力端子に接続され、さらに、前記比
較電圧設定用抵抗の他方は前記コンパレータの他方の入
力端子に接続されるとともに定電流源を介して接地され
、前記コンパレータの一方の端子には前記電源から比較
電圧設定用抵抗を通して前記定電流源に流れる電流によ
り比較電圧が設定され、さらに前記被検査半導体デバイ
スの電源端子より検出されるスパイク電流と比較され、
その結果がコンパレータ出力端子にパルスとして出力さ
れるか否かを検知することによりスパイク電流を検査で
きるようにしたものである。
[Means for Solving the Problems] In order to solve the above-mentioned problems, an inspection device of the present invention has one power supply connected to one of a current detection resistor and a comparison voltage setting resistor, and the other power supply connected to one of a current detection resistor and a comparison voltage setting resistor. The other of the current detection resistors is connected to the power supply terminal of the semiconductor device under test and also connected to one input terminal of the comparator, and the other of the comparison voltage setting resistors is connected to the other input terminal of the comparator. and grounded via a constant current source, a comparison voltage is set at one terminal of the comparator by a current flowing from the power supply through the comparison voltage setting resistor to the constant current source, and further connected to the semiconductor to be tested. Compared to the spike current detected from the device's power terminal,
The spike current can be tested by detecting whether the result is output as a pulse to the comparator output terminal.

【0013】また、本発明の検査方法は、上記検査装置
を用い、比較電圧設定用抵抗値あるいは定電流値を異な
る任意の値に複数回に分けて設定し、それぞれの測定さ
れた出力パルス幅を基準にして中央演算処理装置により
演算して前記スパイク電流の深さを求めるものである。
Furthermore, the inspection method of the present invention uses the above-mentioned inspection apparatus, sets the comparison voltage setting resistance value or constant current value to different arbitrary values multiple times, and checks each measured output pulse width. The depth of the spike current is calculated by a central processing unit based on .

【0014】[0014]

【作用】上記本発明の構成によると、従来は定電圧源で
得ていた比較電圧を定電流源と比較電圧設定用抵抗で得
ることによって、電源電圧Vsと定電圧源による設定電
圧vの高い相対精度を必要とせずとも、定電流源の電流
値または比較電圧設定用抵抗を調整することによって、
任意の分解能を容易に設定することができ、測定精度も
電流検出抵抗、比較電圧設定用抵抗、定電流値の絶対精
度のみによって決まりそれぞれを調整すればよい。
[Operation] According to the configuration of the present invention, the comparison voltage, which was conventionally obtained from a constant voltage source, is obtained from a constant current source and a comparison voltage setting resistor, so that the power supply voltage Vs and the set voltage v by the constant voltage source are increased. Even if relative accuracy is not required, by adjusting the current value of the constant current source or the resistance for setting the comparison voltage,
Any resolution can be easily set, and the measurement accuracy is determined only by the absolute accuracy of the current detection resistor, comparison voltage setting resistor, and constant current value, and it is only necessary to adjust each of them.

【0015】また従来スパイク電流のピーク値を求める
のに、パルス幅が0(ゼロ)になる点を探し出すので、
時間がかかっていたが、本発明の方法によると複数の任
意のポイントのパルス幅を基にして演算によってピーク
値を求めるので、短時間で終了することができる。
[0015] Conventionally, in order to find the peak value of the spike current, the point where the pulse width becomes 0 (zero) is found, so
However, according to the method of the present invention, the peak value is determined by calculation based on the pulse widths at a plurality of arbitrary points, so the process can be completed in a short time.

【0016】[0016]

【実施例】以下本発明の一実施例を図面に基づいて説明
する。図1は本発明の一実施例の半導体デバイスのスパ
イク電流検査装置を示すブロック図である。図1におい
て、電源2は電流検出抵抗3を介して被検査半導体デバ
イス1の電源端子に接続されており、被検査半導体デバ
イスに流れるスパイク電流量は、電流検出抵抗3の抵抗
値Rsによって電圧降下を起こし、電源端子に電圧の変
化として現れる。一般に電流検出抵抗3の抵抗値Rsは
、実際の半導体デバイスの動作に近くするため、低い抵
抗値が適している。スパイク電流量(電圧)は、コンパ
レータ5の負入力端子5bに印加され、正入力端子5a
に印加された電圧と比較した結果を出力端子5cにパル
スとして出力する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a block diagram showing a spike current testing apparatus for semiconductor devices according to an embodiment of the present invention. In FIG. 1, a power supply 2 is connected to a power supply terminal of a semiconductor device under test 1 via a current detection resistor 3, and the amount of spike current flowing through the semiconductor device under test is reduced by a voltage drop due to the resistance value Rs of the current detection resistor 3. This occurs as a voltage change at the power supply terminals. Generally, a low resistance value Rs is suitable for the current detection resistor 3 in order to approximate the operation of an actual semiconductor device. The spike current amount (voltage) is applied to the negative input terminal 5b of the comparator 5, and the spike current amount (voltage) is applied to the negative input terminal 5b of the comparator 5.
The result of comparison with the voltage applied to the output terminal 5c is output as a pulse to the output terminal 5c.

【0017】コンパレータ5の正入力端子5aには、半
導体測定装置6を構成する中央処理装置8(制御・演算
・判定を行う)によって任意の出力に調整可能な定電流
源9が接続されており、電源2とコンパレータ5の正入
力端子5aの間に介装された比較電圧設定用抵抗4の抵
抗値Rcと定電流源9の設定電流値iによってスパイク
電流量に対応する比較電圧を自由に設定することができ
る。またコンパレータ5の出力端子5cには、測定値の
読み込み可能なパルス測定器7が接続されており、中央
演算処理装置8によって出力パルス幅を測定をすること
ができる。
A constant current source 9 is connected to the positive input terminal 5a of the comparator 5 and is adjustable to any output by a central processing unit 8 (performs control, calculation, and judgment) that constitutes the semiconductor measuring device 6. , the comparison voltage corresponding to the spike current amount can be freely set by the resistance value Rc of the comparison voltage setting resistor 4 interposed between the power supply 2 and the positive input terminal 5a of the comparator 5 and the set current value i of the constant current source 9. Can be set. Further, a pulse measuring device 7 capable of reading measured values is connected to the output terminal 5c of the comparator 5, and the output pulse width can be measured by the central processing unit 8.

【0018】従来例で述べたように一般的なスパイク電
流の形状はくさび型をしているので、このスパイク電流
のピーク値を求めるには、定電流源9による比較電圧を
複数回に分けて任意の異なる値に変化させ、その都度パ
ルス測定器7によりパルス幅を測定して行き、それぞれ
のスパイク電流量に対応した比較電流値とパルス幅を基
にして直線近似式にあてはめ、パルス幅がちょうど0(
ゼロ)になる点を演算で求めることによって、スパイク
電流のピーク値を演算結果から得る方法で行う。
As described in the conventional example, the shape of a spike current is generally wedge-shaped, so in order to obtain the peak value of this spike current, the comparison voltage from the constant current source 9 is divided into several times. Change it to an arbitrary different value, measure the pulse width each time with the pulse measuring device 7, and apply a linear approximation formula based on the comparison current value and pulse width corresponding to each spike current amount to find the pulse width. Exactly 0 (
The peak value of the spike current is obtained from the calculation result by calculating the point at which the spike current becomes zero.

【0019】図2にコンパレータ5の入出波形を示す。 5aがスパイク電流量に対応した比較電流値に当たる比
較電圧、5bがスパイク電流量(電圧)、5cが比較結
果のパルス出力である。
FIG. 2 shows input and output waveforms of the comparator 5. 5a is a comparison voltage corresponding to a comparison current value corresponding to the amount of spike current, 5b is the amount of spike current (voltage), and 5c is a pulse output of the comparison result.

【0020】定電流源9より設定されるスパイク電流に
対応した比較電流値をIref とするとIref 次
式より得られる。 Iref =(Vs−Rc・i)/Rsまたスパイク電
流のピーク値をIpeakとする。
Letting Iref be the comparison current value corresponding to the spike current set by the constant current source 9, Iref is obtained from the following equation. Iref = (Vs-Rc·i)/Rs Also, let Ipeak be the peak value of the spike current.

【0021】まず1回目、図2(a) のように任意の
Iref 値のIref 1 を設定すると、スパイク
電流のIref 1 値を越える時間がコンパレータ5
の出力端子5cにパルス幅となって現れる。これを測定
しd1とする。次に2回目は図2(b) のようにIr
ef 値をIref 2 に変更し同じように測定した
ときのパルス幅をd2とする。この1回目と2回目の比
較電流値Iref 1 ,Iref 2 とパルス幅d
1,d2を基にしてパルス幅がちょうど0(ゼロ)にな
る点、すなわちスパイク電流のピーク値Ipeakは直
線近似式により次式から求めることができる。
First, when Iref 1 is set to an arbitrary Iref value as shown in FIG. 2(a), the time when the spike current exceeds the Iref 1 value is determined by
appears as a pulse width at the output terminal 5c. This is measured and set as d1. Next, for the second time, as shown in Figure 2(b), Ir
Let d2 be the pulse width when the ef value is changed to Iref 2 and measured in the same manner. These first and second comparison current values Iref 1 , Iref 2 and pulse width d
The point at which the pulse width becomes exactly 0 (zero) based on 1 and d2, that is, the peak value Ipeak of the spike current, can be determined from the following equation using a linear approximation equation.

【0022】       Ipeak=Iref 1 +〔(Ire
f 2 −Iref 1 )・d1/d1−d2〕図2
の例の場合、測定は2回だけであるが、3回、4回とI
ref を細かく設定して直線近似によってIpeak
を求めるようにすればもっと正確に得ることも可能であ
る。
Ipeak=Iref 1 + [(Ire
f 2 −Iref 1 )・d1/d1−d2] Figure 2
In the case of the example above, the measurement is performed only twice, but the measurement is performed three times, four times, and I
Ipeak by setting ref finely and linear approximation
It is also possible to obtain more accurately by searching for .

【0023】[0023]

【発明の効果】以上のように本発明によれば、負荷変動
による電源電圧の瞬間的な変動や経時変化にも影響され
ることなく、電流検出用抵抗、比較電圧設定用抵抗、定
電流源の定電流値の絶対精度のみによって正確に、また
複数の任意のパルス幅を基にして演算によって短時間に
半導体デバイスのスパイク電流の検査を行うことができ
る。
As described above, according to the present invention, the current detection resistor, comparison voltage setting resistor, constant current source The spike current of a semiconductor device can be tested accurately only by the absolute accuracy of the constant current value, and in a short time by calculation based on a plurality of arbitrary pulse widths.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】本発明の一実施例における半導体デバイスのス
パイク電流の検査装置を示すブロック図である。
FIG. 1 is a block diagram showing a spike current testing apparatus for semiconductor devices according to an embodiment of the present invention.

【図2】図1の検査装置における各部の信号波形の説明
図である。
FIG. 2 is an explanatory diagram of signal waveforms of each part in the inspection apparatus of FIG. 1;

【図3】従来例における半導体デバイスのスパイク電流
の検査装置を示すブロック図である。
FIG. 3 is a block diagram showing a conventional spike current testing apparatus for semiconductor devices.

【図4】図3の検査装置における各部の信号波形の説明
図である。
FIG. 4 is an explanatory diagram of signal waveforms of each part in the inspection apparatus of FIG. 3;

【符号の説明】[Explanation of symbols]

1    被検査半導体デバイス 2    電源 3    電流検出抵抗 4    比較電圧設定用抵抗 5    コンパレータ 6    半導体測定装置 7    パルス測定器 8    中央演算処理装置 9    定電流源 1 Semiconductor device under test 2 Power supply 3 Current detection resistor 4 Comparison voltage setting resistor 5 Comparator 6 Semiconductor measurement equipment 7 Pulse measuring device 8 Central processing unit 9 Constant current source

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】  電源の一方が電流検出抵抗と比較電圧
設定用抵抗の一方にそれぞれ接続され、前記電源の他方
は接地され、前記電流検出抵抗の他方が被検査半導体デ
バイスの電源端子に接続されるとともにコンパレータの
一方の入力端子に接続され、さらに、前記比較電圧設定
用抵抗の他方が前記コンパレータの他方の入力端子に接
続されるとともに定電流源を介して接地され、前記コン
パレータの一方の端子には前記電源から比較電圧設定用
抵抗を通して前記定電流源に流れる電流により比較電圧
が設定され、さらに前記被検査半導体デバイスの電源端
子より検出されるスパイク電流と比較され、その結果が
コンパレータ出力端子にパルスとして出力されるか否か
を検知することによりスパイク電流を検査可能にした半
導体デバイスの検査装置。
1. One of the power supplies is connected to one of a current detection resistor and a comparison voltage setting resistor, the other of the power supply is grounded, and the other of the current detection resistor is connected to a power supply terminal of a semiconductor device under test. and connected to one input terminal of the comparator; further, the other side of the comparison voltage setting resistor is connected to the other input terminal of the comparator and grounded via a constant current source; A comparison voltage is set by a current flowing from the power supply to the constant current source through the comparison voltage setting resistor, and is further compared with the spike current detected from the power supply terminal of the semiconductor device under test, and the result is sent to the comparator output terminal. A semiconductor device testing device that can test spike currents by detecting whether or not they are output as pulses.
【請求項2】  請求項1記載の検査装置を用い、比較
電圧設定用抵抗値あるいは定電流値を異なる任意の値に
複数回に分けて設定し、それぞれの測定された出力パル
ス幅を基準にして中央演算処理装置により演算して前記
スパイク電流の深さを求めることを特徴とする半導体デ
バイスの検査方法。
2. Using the inspection device according to claim 1, the resistance value for setting the comparison voltage or the constant current value is set to different arbitrary values multiple times, and each measured output pulse width is used as a reference. A method for inspecting a semiconductor device, characterized in that the depth of the spike current is calculated by a central processing unit.
JP3010535A 1991-01-31 1991-01-31 Inspection apparatus and method for semiconductor device Pending JPH04244975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3010535A JPH04244975A (en) 1991-01-31 1991-01-31 Inspection apparatus and method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3010535A JPH04244975A (en) 1991-01-31 1991-01-31 Inspection apparatus and method for semiconductor device

Publications (1)

Publication Number Publication Date
JPH04244975A true JPH04244975A (en) 1992-09-01

Family

ID=11752958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3010535A Pending JPH04244975A (en) 1991-01-31 1991-01-31 Inspection apparatus and method for semiconductor device

Country Status (1)

Country Link
JP (1) JPH04244975A (en)

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