JPH04196233A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPH04196233A
JPH04196233A JP2332951A JP33295190A JPH04196233A JP H04196233 A JPH04196233 A JP H04196233A JP 2332951 A JP2332951 A JP 2332951A JP 33295190 A JP33295190 A JP 33295190A JP H04196233 A JPH04196233 A JP H04196233A
Authority
JP
Japan
Prior art keywords
bonding wire
weight
resonance
wire
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2332951A
Other languages
English (en)
Inventor
Kunihiko Sanada
眞田　邦彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2332951A priority Critical patent/JPH04196233A/ja
Publication of JPH04196233A publication Critical patent/JPH04196233A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/4556—Disposition, e.g. coating on a part of the core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/15165—Monolayer substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体集積回路装置に関し、特に半導体素
子とリードフレームとを接続するホンディングワイヤに
関するものである。
〔従来の技術〕
第２図は従来のボンディングワイヤ（内部リード）を示
す図であり、図において１はボンディングワイヤ、２は
半導体素子、３はポンディングパッド、４はリードフレ
ーム、５はパッケージである。
次に動作について説明する。
半導体集積回路装置において、パッケージ５上に設けら
れたリードフレーム４と、同じくパッケージ５上に配置
された半導体素子２のポンディングパッド３との間をホ
ンディングワイヤ１て接続しており、該ホンディングワ
イヤ１によって半導体素子２とパッケージ５との間で電
気信号を伝達する。
〔発明が解決しようとする課題〕
従来の半導体集積回路装置の中空パッケージにおけるボ
ンディングワイヤは以上のように構成されているので、
外部からの加振に対して、該ボンディングワイヤ１の持
つ固有振動数で共振を起こし、共振破断するという問題
点かあった。
この発明は上記のような問題点を解消するためになされ
たもので、ボンディングワイヤの共振を抑えることので
きる構成をとる半導体集積回路装置を得ることを目的と
する。
〔課題を解決するための手段〕
この発明に係る半導体集積回路装置は、ホンデイングワ
イヤか長手方向に不均一な重量を持つようにしたもので
ある。
〔作用〕
この発明における半導体集積回路装置は、ホンディング
ワイヤの重量か長手方向に不均一となるようにしたこと
によって、該ボンディングワイヤの共振振動数が変化し
共振か抑制され、共振破断が防止される。
〔実施例〕
以下、この発明の一実施例を図について説明する。
第１図はこの発明の一実施例によるホンディングワイヤ
を示す断面側面図である。図において、１はボンディン
グワイヤ、２は半導体素子、３はポンディングパッド、
４はリードフレーム、５はパッケージ、６はボンディン
グワイヤｌに付加されたおもりである。
ボンディングワイヤ１はそれぞれ固有振動数を持ってお
り、ボンディング後の外部からの加振により共振を起こ
すことで共振破断か発生し、半導体集積回路装置の信頼
性を低下させる要因となる。
本発明におけるホンディングワイヤ１は、途中におもり
６を付加しである。このとき、おもり６を付加する位置
は、該ボンディングワイヤ１の固有振動数での共振か発
生しにくい場所、つまりホンディングワイヤ１において
振動の腹や節かできにくい場所とする。
このおもり６を途中に付加したことてホンディングワイ
ヤ１はその重量か長手方向に不均一となり、ホンディン
グワイヤｌの振動の腹や節かできにくくなるので、共振
を抑制することか可能となる。
上記実施例ではボンディングワイヤ１におもり６を設は
長手方向に該ホンディングワイヤの重量か不均一となる
ようにしたものを示したか、ホンディングワイヤｌを線
径の不均一なもの、あるいはワイヤの長手方向の密度の
不均一なものて構成して重量を不均一にしてもよく、こ
の場合てもホンディングワイヤｌの固有振動数は変化し
、上記実施例と同様の効果を奏する。
また、上記実施例ではボンディングワイヤ１におもり６
を１カ所のみ設けたものを示したが、その数は複数でも
よく、線径の不均一な部分及び密度の不均一な部分も複
数カ所にわたっても良い。
この場合でも、ボンディングワイヤの固有振動数は変化
し、上記実施例と同様の効果を奏する。
また、ボンディングワイヤのおもり６は導体でも絶縁体
でも良い。
また、ボンディングワイヤのおもり６はワイヤリングの
途中に電気トーチ等を用いてポールを作ることで付加し
ても、またワイヤリング後に付加しても良い。
〔発明の効果〕
以上のように、本発明によれば、半導体集積回路装置の
中空パッケージにおいて、ボンディングワイヤか長手方
向に不均一な重量をもつようにしてボンディングワイヤ
の共振を抑制したので、共振破断を防ぐことかてき、信
頼性の高い半導体集積回路装置が得られるという効果か
ある。
【図面の簡単な説明】
第１図はこの発明の一実施例によるホンディングワイヤ
を示す断面側面図、第２図は従来のホンディングワイヤ
を示す断面側面図である。 図において、ｌは半導体ホンディングワイヤ、２は半導
体素子、３はボンディングパット、４はリードフレーム
、５はパッケージ、６はおもりである。 なお図中同一符号は同−又は相当部分を示す。

Claims (1)

    【特許請求の範囲】
  1. （１）半導体集積回路装置において、 半導体素子とそれを封入する中空パッケージのリードフ
    レームとを接続するボンディングワイヤが長手方向に不
    均一な重量を持つようにしたことを特徴とする半導体集
    積回路装置。
JP2332951A 1990-11-27 1990-11-27 半導体集積回路装置 Pending JPH04196233A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2332951A JPH04196233A (ja) 1990-11-27 1990-11-27 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2332951A JPH04196233A (ja) 1990-11-27 1990-11-27 半導体集積回路装置

Publications (1)

Publication Number Publication Date
JPH04196233A true JPH04196233A (ja) 1992-07-16

Family

ID=18260637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2332951A Pending JPH04196233A (ja) 1990-11-27 1990-11-27 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPH04196233A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003015164A3 (en) * 2001-05-30 2003-12-04 Ericsson Inc Damping of high frequency bond wire vibration
WO2011143549A3 (en) * 2010-05-14 2012-05-31 Continental Automotive Systems, Inc. Resonance optimized bonding wire with a sigmoid shaped loop

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003015164A3 (en) * 2001-05-30 2003-12-04 Ericsson Inc Damping of high frequency bond wire vibration
WO2011143549A3 (en) * 2010-05-14 2012-05-31 Continental Automotive Systems, Inc. Resonance optimized bonding wire with a sigmoid shaped loop
US8288876B2 (en) 2010-05-14 2012-10-16 Continental Automotive Systems, Inc. Bonding wire profile for minimizing vibration fatigue failure
CN102884622A (zh) * 2010-05-14 2013-01-16 大陆汽车系统公司 具有s形环的谐振优化的接合线

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