JPH0416443Y2 - - Google Patents
Info
- Publication number
- JPH0416443Y2 JPH0416443Y2 JP1984119308U JP11930884U JPH0416443Y2 JP H0416443 Y2 JPH0416443 Y2 JP H0416443Y2 JP 1984119308 U JP1984119308 U JP 1984119308U JP 11930884 U JP11930884 U JP 11930884U JP H0416443 Y2 JPH0416443 Y2 JP H0416443Y2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- junction
- epitaxial growth
- type
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 description 10
- 239000000969 carrier Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11930884U JPS6134753U (ja) | 1984-07-31 | 1984-07-31 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11930884U JPS6134753U (ja) | 1984-07-31 | 1984-07-31 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6134753U JPS6134753U (ja) | 1986-03-03 |
| JPH0416443Y2 true JPH0416443Y2 (fr) | 1992-04-13 |
Family
ID=30678188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11930884U Granted JPS6134753U (ja) | 1984-07-31 | 1984-07-31 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6134753U (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1218200B (it) * | 1988-03-29 | 1990-04-12 | Sgs Thomson Microelectronics | Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4364073A (en) * | 1980-03-25 | 1982-12-14 | Rca Corporation | Power MOSFET with an anode region |
| JPS6026151A (ja) * | 1983-07-22 | 1985-02-09 | Shinagawa Diecast Kogyo Kk | 膜式気化器の加速装置 |
-
1984
- 1984-07-31 JP JP11930884U patent/JPS6134753U/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4364073A (en) * | 1980-03-25 | 1982-12-14 | Rca Corporation | Power MOSFET with an anode region |
| JPS6026151A (ja) * | 1983-07-22 | 1985-02-09 | Shinagawa Diecast Kogyo Kk | 膜式気化器の加速装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6134753U (ja) | 1986-03-03 |
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