JPH0416025B2 - - Google Patents

Info

Publication number
JPH0416025B2
JPH0416025B2 JP59015264A JP1526484A JPH0416025B2 JP H0416025 B2 JPH0416025 B2 JP H0416025B2 JP 59015264 A JP59015264 A JP 59015264A JP 1526484 A JP1526484 A JP 1526484A JP H0416025 B2 JPH0416025 B2 JP H0416025B2
Authority
JP
Japan
Prior art keywords
gate electrode
sense amplifier
sense
sense amplifiers
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59015264A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60167360A (ja
Inventor
Masao Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59015264A priority Critical patent/JPS60167360A/ja
Publication of JPS60167360A publication Critical patent/JPS60167360A/ja
Publication of JPH0416025B2 publication Critical patent/JPH0416025B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP59015264A 1984-02-01 1984-02-01 半導体記憶装置 Granted JPS60167360A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59015264A JPS60167360A (ja) 1984-02-01 1984-02-01 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59015264A JPS60167360A (ja) 1984-02-01 1984-02-01 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS60167360A JPS60167360A (ja) 1985-08-30
JPH0416025B2 true JPH0416025B2 (enrdf_load_stackoverflow) 1992-03-19

Family

ID=11883995

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59015264A Granted JPS60167360A (ja) 1984-02-01 1984-02-01 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS60167360A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2704037B2 (ja) * 1990-10-08 1998-01-26 日本電気アイシーマイコンシステム株式会社 半導体記憶回路装置
US5644527A (en) * 1991-10-22 1997-07-01 Sharp Kabushiki Kaisha Semiconductor memory device
KR100313151B1 (ko) 1999-12-30 2001-11-07 박종섭 컬럼 트랜지스터의 레이아웃방법
JP2004235515A (ja) 2003-01-31 2004-08-19 Renesas Technology Corp 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927101B2 (ja) * 1976-06-21 1984-07-03 日本電信電話株式会社 半導体装置
JPS56104446A (en) * 1980-01-23 1981-08-20 Hitachi Ltd Semiconductor device
JPS5812195A (ja) * 1981-07-15 1983-01-24 Nec Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPS60167360A (ja) 1985-08-30

Similar Documents

Publication Publication Date Title
JP2703970B2 (ja) Mos型半導体装置
US9646678B2 (en) Semiconductor integrated circuit device
JP3036588B2 (ja) 半導体記憶装置
JP2950558B2 (ja) 半導体装置
US6359804B2 (en) Static semiconductor memory cell formed in an n-well and p-well
US6118158A (en) Static random access memory device having a memory cell array region in which a unit cell is arranged in a matrix
US4849801A (en) Semiconductor memory device having increased capacitance for the storing nodes of the memory cells
US6204538B1 (en) SRAM cell
US5285092A (en) Semiconductor memory device having a stacked type capacitor and manufacturing method therefor
US5227649A (en) Circuit layout and method for VLSI circuits having local interconnects
US4524377A (en) Integrated circuit
KR100377082B1 (ko) 반도체 장치
US6507124B2 (en) Semiconductor memory device
KR100257066B1 (ko) 에스램(sram)셀의 구조 및 이의 제조방법
US6455899B2 (en) Semiconductor memory device having improved pattern of layers and compact dimensions
JPH0416025B2 (enrdf_load_stackoverflow)
US6407463B2 (en) Semiconductor memory device having gate electrode, drain-drain contact, and drain-gate contact layers
US6072714A (en) Static memory cell with a pair of transfer MOS transistors, a pair of driver MOS transistors and a pair of load elements
US6347048B2 (en) Semiconductor memory device
US6538338B2 (en) Static RAM semiconductor memory device having reduced memory
JP2000068479A (ja) 半導体集積回路装置
US6469400B2 (en) Semiconductor memory device
US5219781A (en) Method for manufacturing semiconductor memory device having a stacked type capacitor
US6570264B2 (en) Semiconductor memory device
JPS60161660A (ja) 半導体記憶装置