JPH041509B2 - - Google Patents
Info
- Publication number
- JPH041509B2 JPH041509B2 JP58067199A JP6719983A JPH041509B2 JP H041509 B2 JPH041509 B2 JP H041509B2 JP 58067199 A JP58067199 A JP 58067199A JP 6719983 A JP6719983 A JP 6719983A JP H041509 B2 JPH041509 B2 JP H041509B2
- Authority
- JP
- Japan
- Prior art keywords
- well
- electrode
- substrate
- gate electrode
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 14
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58067199A JPS59193065A (ja) | 1983-04-15 | 1983-04-15 | トランジスタ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58067199A JPS59193065A (ja) | 1983-04-15 | 1983-04-15 | トランジスタ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59193065A JPS59193065A (ja) | 1984-11-01 |
| JPH041509B2 true JPH041509B2 (enExample) | 1992-01-13 |
Family
ID=13337992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58067199A Granted JPS59193065A (ja) | 1983-04-15 | 1983-04-15 | トランジスタ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59193065A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11984502B2 (en) * | 2020-03-13 | 2024-05-14 | Rohm Co., Ltd. | Semiconductor device with suppression of decrease of withstand voltage, and method for manufacturing the semiconductor device |
-
1983
- 1983-04-15 JP JP58067199A patent/JPS59193065A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59193065A (ja) | 1984-11-01 |
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