JPH0414551B2 - - Google Patents

Info

Publication number
JPH0414551B2
JPH0414551B2 JP57070046A JP7004682A JPH0414551B2 JP H0414551 B2 JPH0414551 B2 JP H0414551B2 JP 57070046 A JP57070046 A JP 57070046A JP 7004682 A JP7004682 A JP 7004682A JP H0414551 B2 JPH0414551 B2 JP H0414551B2
Authority
JP
Japan
Prior art keywords
photoelectric conversion
solid
state imaging
imaging device
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57070046A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58187082A (ja
Inventor
Takao Kuroda
Sakaki Horii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57070046A priority Critical patent/JPS58187082A/ja
Publication of JPS58187082A publication Critical patent/JPS58187082A/ja
Publication of JPH0414551B2 publication Critical patent/JPH0414551B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14831Area CCD imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP57070046A 1982-04-26 1982-04-26 固体撮像装置の駆動方法 Granted JPS58187082A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57070046A JPS58187082A (ja) 1982-04-26 1982-04-26 固体撮像装置の駆動方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57070046A JPS58187082A (ja) 1982-04-26 1982-04-26 固体撮像装置の駆動方法

Publications (2)

Publication Number Publication Date
JPS58187082A JPS58187082A (ja) 1983-11-01
JPH0414551B2 true JPH0414551B2 (de) 1992-03-13

Family

ID=13420233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57070046A Granted JPS58187082A (ja) 1982-04-26 1982-04-26 固体撮像装置の駆動方法

Country Status (1)

Country Link
JP (1) JPS58187082A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2517882B2 (ja) * 1986-12-23 1996-07-24 ソニー株式会社 固体撮像装置
JP2005174965A (ja) * 2003-12-05 2005-06-30 Nec Kyushu Ltd 電荷転送装置およびその製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5020679A (de) * 1973-05-21 1975-03-05
US3896485A (en) * 1973-12-03 1975-07-22 Fairchild Camera Instr Co Charge-coupled device with overflow protection
JPS5437422A (en) * 1977-08-29 1979-03-19 Toshiba Corp Solid state pickup device
JPS5495116A (en) * 1978-01-13 1979-07-27 Toshiba Corp Solid image pickup unit
JPS54121689A (en) * 1978-03-15 1979-09-20 Canon Inc Adjustment method of charge storage time for photo sensor device
JPS56100577A (en) * 1980-01-17 1981-08-12 Toshiba Corp Solid image pickup device
JPS5755672A (en) * 1980-09-19 1982-04-02 Nec Corp Solid-state image pickup device and its driving method
JPS5762557A (en) * 1980-10-02 1982-04-15 Nec Corp Solid state image pickup device and driving method therefor
JPS5762672A (en) * 1980-10-01 1982-04-15 Toshiba Corp Solid-state image pickup sensor

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5020679A (de) * 1973-05-21 1975-03-05
US3896485A (en) * 1973-12-03 1975-07-22 Fairchild Camera Instr Co Charge-coupled device with overflow protection
JPS5437422A (en) * 1977-08-29 1979-03-19 Toshiba Corp Solid state pickup device
JPS5495116A (en) * 1978-01-13 1979-07-27 Toshiba Corp Solid image pickup unit
JPS54121689A (en) * 1978-03-15 1979-09-20 Canon Inc Adjustment method of charge storage time for photo sensor device
JPS56100577A (en) * 1980-01-17 1981-08-12 Toshiba Corp Solid image pickup device
JPS5755672A (en) * 1980-09-19 1982-04-02 Nec Corp Solid-state image pickup device and its driving method
JPS5762672A (en) * 1980-10-01 1982-04-15 Toshiba Corp Solid-state image pickup sensor
JPS5762557A (en) * 1980-10-02 1982-04-15 Nec Corp Solid state image pickup device and driving method therefor

Also Published As

Publication number Publication date
JPS58187082A (ja) 1983-11-01

Similar Documents

Publication Publication Date Title
US4851890A (en) Solid-state image sensor
US5619049A (en) CCD-type solid state image pickup with overflow drain structure
CA1049122A (en) Blooming control for charge coupled imager
US4672455A (en) Solid-state image-sensor having reverse-biased substrate and transfer registers
JPH0410785B2 (de)
US5892253A (en) Active pixel sensor cell with balanced blue response and reduced noise
JP3892112B2 (ja) パンチスルーリセットとクロストーク抑制を持つ能動画素センサー
JPH05137072A (ja) 固体撮像装置
US4794279A (en) A solid state imaging device which applies two separate storage voltages for the signal charges so as to reduce the smear level and the dark current
JPH08250697A (ja) 増幅型光電変換素子及びそれを用いた増幅型固体撮像装置
JP2858179B2 (ja) Ccd映像素子
JPH10173162A (ja) 固体撮像素子
JPH0414551B2 (de)
JP2641809B2 (ja) Ccd映像素子
JP2723520B2 (ja) 固体撮像素子
JP3718103B2 (ja) 固体撮像装置とその駆動方法、およびこれを用いたカメラ
US5397730A (en) Method of making a high efficiency horizontal transfer section of a solid state imager
US5276341A (en) Structure for fabrication of a CCD image sensor
JP2697246B2 (ja) 固体撮像素子
JP3153934B2 (ja) 固体撮像装置
JPS6160592B2 (de)
JPH0425714B2 (de)
JP2901328B2 (ja) 固体撮像素子
JPH05243546A (ja) 固体撮像装置
JP2594923B2 (ja) 固体撮像素子