JPH04107976A - 半導体レーザ装置 - Google Patents

半導体レーザ装置

Info

Publication number
JPH04107976A
JPH04107976A JP2228570A JP22857090A JPH04107976A JP H04107976 A JPH04107976 A JP H04107976A JP 2228570 A JP2228570 A JP 2228570A JP 22857090 A JP22857090 A JP 22857090A JP H04107976 A JPH04107976 A JP H04107976A
Authority
JP
Japan
Prior art keywords
semiconductor laser
reflectance
quantum
oscillation
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2228570A
Other languages
English (en)
Japanese (ja)
Inventor
Kimio Shigihara
君男 鴫原
Yutaka Nagai
豊 永井
Toshitaka Aoyanagi
利隆 青柳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2228570A priority Critical patent/JPH04107976A/ja
Priority to DE69120972T priority patent/DE69120972T2/de
Priority to EP94200223A priority patent/EP0603164B1/en
Priority to DE69120496T priority patent/DE69120496T2/de
Priority to EP91303392A priority patent/EP0482733B1/en
Priority to US07/693,318 priority patent/US5161164A/en
Priority to US07/794,503 priority patent/US5177749A/en
Publication of JPH04107976A publication Critical patent/JPH04107976A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/107—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using electro-optic devices, e.g. exhibiting Pockels or Kerr effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0285—Coatings with a controllable reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/0622—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3418—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers using transitions from higher quantum levels

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP2228570A 1990-08-28 1990-08-28 半導体レーザ装置 Pending JPH04107976A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2228570A JPH04107976A (ja) 1990-08-28 1990-08-28 半導体レーザ装置
DE69120972T DE69120972T2 (de) 1990-08-28 1991-04-17 Halbleiterlaser
EP94200223A EP0603164B1 (en) 1990-08-28 1991-04-17 A semiconductor laser device
DE69120496T DE69120496T2 (de) 1990-08-28 1991-04-17 Halbleiterlaser
EP91303392A EP0482733B1 (en) 1990-08-28 1991-04-17 A semiconductor laser device
US07/693,318 US5161164A (en) 1990-08-28 1991-04-29 Semiconductor laser device
US07/794,503 US5177749A (en) 1990-08-28 1991-11-19 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2228570A JPH04107976A (ja) 1990-08-28 1990-08-28 半導体レーザ装置

Publications (1)

Publication Number Publication Date
JPH04107976A true JPH04107976A (ja) 1992-04-09

Family

ID=16878434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2228570A Pending JPH04107976A (ja) 1990-08-28 1990-08-28 半導体レーザ装置

Country Status (4)

Country Link
US (2) US5161164A (enExample)
EP (2) EP0603164B1 (enExample)
JP (1) JPH04107976A (enExample)
DE (2) DE69120496T2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001111163A (ja) * 1999-10-06 2001-04-20 Oki Electric Ind Co Ltd 半導体レーザ素子
JP2008187175A (ja) * 2007-01-26 2008-08-14 Samsung Electronics Co Ltd スペックル低減レーザー及びそれを採用したレーザーディスプレイ装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5416583A (en) * 1993-07-30 1995-05-16 Kearfott Guidance & Navigation Corporation Quantum well bias mirror for phase modulation in a ring laser gyroscope
US5434874A (en) * 1993-10-08 1995-07-18 Hewlett-Packard Company Method and apparatus for optimizing output characteristics of a tunable external cavity laser
US5461637A (en) * 1994-03-16 1995-10-24 Micracor, Inc. High brightness, vertical cavity semiconductor lasers
JP2004088049A (ja) * 2002-03-08 2004-03-18 Mitsubishi Electric Corp 光半導体装置
US7662698B2 (en) * 2006-11-07 2010-02-16 Raytheon Company Transistor having field plate

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59115583A (ja) * 1982-12-22 1984-07-04 Sanyo Electric Co Ltd 半導体レ−ザ
US4589115A (en) * 1983-09-09 1986-05-13 Xerox Corporation Wavelength tuning of quantum well heterostructure lasers using an external grating
US4680769A (en) * 1984-11-21 1987-07-14 Bell Communications Research, Inc. Broadband laser amplifier structure
EP0194335B1 (en) * 1985-03-14 1991-01-02 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Improved semiconductor laser devices
DE3617084A1 (de) * 1986-05-21 1987-11-26 Messerschmitt Boelkow Blohm Laser mit umschaltbarer emissionswellenlaenge
DE3751548T2 (de) * 1986-07-25 1996-04-11 Mitsubishi Electric Corp Halbleiterlaser.
JPS6332985A (ja) * 1986-07-25 1988-02-12 Mitsubishi Electric Corp 半導体レ−ザ
JPS6332986A (ja) * 1986-07-25 1988-02-12 Mitsubishi Electric Corp 集積化半導体レ−ザ
JPS6354794A (ja) * 1986-07-25 1988-03-09 Mitsubishi Electric Corp 半導体レ−ザ
FI82326C (fi) * 1986-12-05 1991-02-11 Lasermatic Oy Laserhuvud.
JPS63312688A (ja) * 1987-06-15 1988-12-21 Mitsubishi Electric Corp 半導体レ−ザ及びその使用方法
JPH01208884A (ja) * 1988-02-17 1989-08-22 Nec Corp 波長可変単一軸モードレーザダイオード
EP0361399A3 (en) * 1988-09-28 1990-07-18 Canon Kabushiki Kaisha Semmiconductor laser array including lasers with reflecting means having different wavelength selection properties
US5056098A (en) * 1990-07-05 1991-10-08 At&T Bell Laboratories Vertical cavity laser with mirror having controllable reflectivity

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001111163A (ja) * 1999-10-06 2001-04-20 Oki Electric Ind Co Ltd 半導体レーザ素子
JP2008187175A (ja) * 2007-01-26 2008-08-14 Samsung Electronics Co Ltd スペックル低減レーザー及びそれを採用したレーザーディスプレイ装置

Also Published As

Publication number Publication date
EP0603164A3 (enExample) 1994-08-03
EP0482733A1 (en) 1992-04-29
EP0603164A2 (en) 1994-06-22
EP0603164B1 (en) 1996-07-17
DE69120972D1 (de) 1996-08-22
US5161164A (en) 1992-11-03
US5177749A (en) 1993-01-05
EP0482733B1 (en) 1996-06-26
DE69120496T2 (de) 1997-02-06
DE69120496D1 (de) 1996-08-01
DE69120972T2 (de) 1996-11-28

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