JPH041069B2 - - Google Patents

Info

Publication number
JPH041069B2
JPH041069B2 JP60259986A JP25998685A JPH041069B2 JP H041069 B2 JPH041069 B2 JP H041069B2 JP 60259986 A JP60259986 A JP 60259986A JP 25998685 A JP25998685 A JP 25998685A JP H041069 B2 JPH041069 B2 JP H041069B2
Authority
JP
Japan
Prior art keywords
light
substrate
photochemical reaction
light source
parallel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60259986A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62120476A (ja
Inventor
Shunji Kishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP25998685A priority Critical patent/JPS62120476A/ja
Publication of JPS62120476A publication Critical patent/JPS62120476A/ja
Publication of JPH041069B2 publication Critical patent/JPH041069B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
JP25998685A 1985-11-19 1985-11-19 光化学反応加工方法およびその加工装置 Granted JPS62120476A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25998685A JPS62120476A (ja) 1985-11-19 1985-11-19 光化学反応加工方法およびその加工装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25998685A JPS62120476A (ja) 1985-11-19 1985-11-19 光化学反応加工方法およびその加工装置

Publications (2)

Publication Number Publication Date
JPS62120476A JPS62120476A (ja) 1987-06-01
JPH041069B2 true JPH041069B2 (de) 1992-01-09

Family

ID=17341692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25998685A Granted JPS62120476A (ja) 1985-11-19 1985-11-19 光化学反応加工方法およびその加工装置

Country Status (1)

Country Link
JP (1) JPS62120476A (de)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61279690A (ja) * 1985-06-05 1986-12-10 Hitachi Ltd 表面処理装置

Also Published As

Publication number Publication date
JPS62120476A (ja) 1987-06-01

Similar Documents

Publication Publication Date Title
US6451512B1 (en) UV-enhanced silylation process to increase etch resistance of ultra thin resists
US6232207B1 (en) Doping process for producing homojunctions in semiconductor substrates
JP2001523039A (ja) 表面における分子スケールのパターン印刷方法
US5356758A (en) Method and apparatus for positively patterning a surface-sensitive resist on a semiconductor wafer
JPH07254556A (ja) パターン形成方法および形成装置
JPS62120476A (ja) 光化学反応加工方法およびその加工装置
JPS61228633A (ja) 薄膜形成方法
JPH0153577B2 (de)
JP2624168B2 (ja) パターン形成方法および電子線描画装置
JP3300781B2 (ja) 酸化膜の形成方法
JP3125004B2 (ja) 基材の表面加工方法
JPS61216449A (ja) パタ−ン薄膜形成方法及びその装置
JP4174610B2 (ja) エッチング方法
JP3111071B2 (ja) 半導体ウエハ基板上にフォトレジスト層をパターニングするプロセス
JP2586700B2 (ja) 配線形成方法
JP2883918B2 (ja) 化合物半導体のパターン形成方法
JP3639840B2 (ja) 超微細周期構造の製造方法
JP2756364B2 (ja) 光表面処理方法及び処理装置
JPS6245035A (ja) 半導体装置の製造装置
KR20120035823A (ko) 하전입자빔 생성에 사용되는 타겟 구조체, 그 제조 방법 및 이를 이용한 의료 기구
JPH0555186A (ja) 表面処理方法
JPH0423416B2 (de)
JPS60260131A (ja) 異方性ドライエツチング方法
JPS63155645A (ja) 表面平坦化方法
JPH0415910A (ja) エッチングパターンの形成方法