JPH0388257U - - Google Patents
Info
- Publication number
- JPH0388257U JPH0388257U JP14980989U JP14980989U JPH0388257U JP H0388257 U JPH0388257 U JP H0388257U JP 14980989 U JP14980989 U JP 14980989U JP 14980989 U JP14980989 U JP 14980989U JP H0388257 U JPH0388257 U JP H0388257U
- Authority
- JP
- Japan
- Prior art keywords
- flag faraday
- ion source
- mass spectrometer
- divided
- faraday
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000002500 ions Chemical class 0.000 claims 3
- 230000005684 electric field Effects 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
Description
第１図は、この考案のフラグフアラデーの斜視
図、第２図は、このフラグフアラデーから導き出
される注入均一性マツプである。また、第３図は
、従来のイオン注入装置の平面図、さらに、第４
図は、従来のフラグフアラデーの斜視図である。
１……イオンソース部、２……ビームライン部
、３……エンドステーシヨン部、４……イオン源
、５……引出電極、６……質量分析器、７……Ｙ
方向走査電極、８……ｘ方向走査電極、９……フ
ラグフアラデー、１０……プラテン、１１……分
割フラグフアラデー、１２，１２ａ……電流測定
線、１３，１３ａ……電流測定器。
FIG. 1 is a perspective view of the flag faraday of this invention, and FIG. 2 is an injection uniformity map derived from the flag faraday. FIG. 3 is a plan view of a conventional ion implanter, and a fourth
The figure is a perspective view of a conventional flag Faraday. 1... Ion source section, 2... Beam line section, 3... End station section, 4... Ion source, 5... Extraction electrode, 6... Mass spectrometer, 7... Y
Direction scanning electrode, 8...X-direction scanning electrode, 9...Flag Faraday, 10...Platen, 11...Divided flag Faraday, 12, 12a...Current measurement line, 13, 13a...Current measuring device.
Claims (1)
分析器で分離し、所望のイオンだけを、電界中で
Ｘ，Ｙ方向に走査させながら、被加工物に、全面
にイオン注入する装置であつて、注入するビーム
電流を測定するフラグフアラデーを有する装置に
おいて、上記フラグフアラデーを、多分割し、そ
れぞれに、電流測定子を設けたことを特徴とする
イオン注入装置。 A device that separates ions generated by an ion source in a vacuum using a mass spectrometer, and injects only the desired ions into the entire surface of the workpiece while scanning in the X and Y directions in an electric field. An ion implantation apparatus having a flag Faraday for measuring the beam current to be implanted, wherein the Flag Faraday is divided into multiple parts, each of which is provided with a current measuring element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14980989U JPH0388257U (en) | 1989-12-25 | 1989-12-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14980989U JPH0388257U (en) | 1989-12-25 | 1989-12-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0388257U true JPH0388257U (en) | 1991-09-10 |
Family
ID=31696184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14980989U Pending JPH0388257U (en) | 1989-12-25 | 1989-12-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0388257U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008060549A (en) * | 2006-07-18 | 2008-03-13 | Applied Materials Inc | Beam stop for ion implantation apparatus |
-
1989
- 1989-12-25 JP JP14980989U patent/JPH0388257U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008060549A (en) * | 2006-07-18 | 2008-03-13 | Applied Materials Inc | Beam stop for ion implantation apparatus |