JPH038857U - - Google Patents
Info
- Publication number
- JPH038857U JPH038857U JP6811989U JP6811989U JPH038857U JP H038857 U JPH038857 U JP H038857U JP 6811989 U JP6811989 U JP 6811989U JP 6811989 U JP6811989 U JP 6811989U JP H038857 U JPH038857 U JP H038857U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electrode support
- ion implantation
- electrodes
- multipole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005405 multipole Effects 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 5
- 238000010884 ion-beam technique Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Description
第１図はこの考案の一実施例を示す概略縦断面
図、第２図は第１図の一体構造電極部の端面図、
第３図はこの考案の別の実施例を示す要部の横断
面図、第４図〜第７図は第１図及び第２図の実施
例の種々の変形例を示す第２図と同様な端面図、
第８図は従来のイオン注入装置の偏向電極を示す
斜視図、第９図は直列に配列した第１の多重極偏
向電極部と第２の多重極偏向電極部とを備えた従
来のイオン注入装置の偏向電極部を示す概略斜視
図である。
図中、１……電極、２，３……絶縁支持体、４
……絶縁性円筒体、５……電極支持物フランジ、
６……真空容器、７……緊締ボルト、８……嵌込
み受け部、１０……電流導入ポート、１１……電
流導入端子、１２……接点値、１３……絶縁性円
筒体、１４〜１７……突起部、１８〜２１……凹
陥部。
FIG. 1 is a schematic vertical cross-sectional view showing an embodiment of this invention, FIG. 2 is an end view of the integrated structure electrode part of FIG. 1,
FIG. 3 is a cross-sectional view of the main part showing another embodiment of this invention, and FIGS. 4 to 7 are similar to FIG. 2 showing various modifications of the embodiment of FIGS. 1 and 2. end view,
FIG. 8 is a perspective view showing a deflection electrode of a conventional ion implanter, and FIG. 9 is a conventional ion implantation device having a first multipole deflection electrode section and a second multipole deflection electrode section arranged in series. FIG. 2 is a schematic perspective view showing a deflection electrode section of the device. In the figure, 1... Electrode, 2, 3... Insulating support, 4
... Insulating cylindrical body, 5 ... Electrode support flange,
6... Vacuum container, 7... Tightening bolt, 8... Fitting receiving part, 10... Current introducing port, 11... Current introducing terminal, 12... Contact value, 13... Insulating cylindrical body, 14~ 17... protrusion, 18-21... recess.
Claims (1)
極偏向電極部の後方に、同じく複数の電極を円筒
篭状に配置した第２の多重極偏向電極部を直列に
配設し、第１の多重極偏向電極部で偏向させたイ
オンビームを第２の多重極偏向電極部で更に偏向
させて平行にし、平行にされたイオンビームを基
板上に走査させるイオン注入装置において、上記
第１及び第２の多重極偏向電極部の複数の電極を
それぞれ１個の電極支持物又は複数の電極支持片
を結合して成る電極支持物で支持すると共に、各
電極又は電極支持物の一部を、電極支持物へのス
パツタ物質の付着を阻止する遮蔽手段としたこと
を特徴とするイオン注入装置。 ２ 各電極が電極支持物に対して隙間をあけて取
り付けられている請求項１に記載のイオン注入装
置。 ３ 電極支持物が各隣接電極間においてスパツタ
物質の付着を阻止する凸凹な表面形状をもつてい
る請求項１に記載のイオン注入装置。[Claims for Utility Model Registration] 1. Behind a first multipole deflection electrode section in which a plurality of electrodes are arranged in a cylindrical cage shape, a second multipole deflection electrode section in which a plurality of electrodes are similarly arranged in a cylindrical cage shape. are arranged in series, the ion beam deflected by the first multipole deflection electrode section is further deflected into parallel by the second multipole deflection electrode section, and the parallelized ion beam is scanned over the substrate. In the ion implantation apparatus, each of the plurality of electrodes of the first and second multipole deflection electrode sections is supported by one electrode support or an electrode support formed by combining a plurality of electrode support pieces, and each electrode Alternatively, an ion implantation device characterized in that a part of the electrode support is used as a shielding means for preventing spatter substances from adhering to the electrode support. 2. The ion implantation device according to claim 1, wherein each electrode is attached to the electrode support with a gap therebetween. 3. The ion implantation device according to claim 1, wherein the electrode support has an uneven surface shape to prevent adhesion of spatter material between adjacent electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6811989U JPH038857U (en) | 1989-06-13 | 1989-06-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6811989U JPH038857U (en) | 1989-06-13 | 1989-06-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH038857U true JPH038857U (en) | 1991-01-28 |
Family
ID=31602284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6811989U Pending JPH038857U (en) | 1989-06-13 | 1989-06-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH038857U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000223054A (en) * | 1999-02-02 | 2000-08-11 | Advantest Corp | Electrostatic deflector of electron beam radiation device |
-
1989
- 1989-06-13 JP JP6811989U patent/JPH038857U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000223054A (en) * | 1999-02-02 | 2000-08-11 | Advantest Corp | Electrostatic deflector of electron beam radiation device |
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