JPS6253558U - - Google Patents
Info
- Publication number
- JPS6253558U JPS6253558U JP14469685U JP14469685U JPS6253558U JP S6253558 U JPS6253558 U JP S6253558U JP 14469685 U JP14469685 U JP 14469685U JP 14469685 U JP14469685 U JP 14469685U JP S6253558 U JPS6253558 U JP S6253558U
- Authority
- JP
- Japan
- Prior art keywords
- ions
- ion
- wafer
- ion implantation
- implants
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005468 ion implantation Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims 5
- 239000000284 extract Substances 0.000 claims 1
- 239000007943 implant Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Description
第１図は本考案の一実施例のイオン注入装置を
示す概略説明図、第２図はイオン源の説明図、第
３図は従来のイオン注入装置の概略説明図である
。
１，１ａ，１ｂ……イオン源、２，２ａ，２ｂ
……ハウジング、３……引出し電極、４……分離
電磁石、５……可変スリツト、６……加速管、７
……収速レンズ、８，９……走査電極、１０……
偏向電極、１１……エンドステーシヨン、１２…
…ウエハ、１４……アークチヤンバー、１７……
フイラメント、１９……オーブンアツセンブリー
。
FIG. 1 is a schematic explanatory diagram showing an ion implantation apparatus according to an embodiment of the present invention, FIG. 2 is an explanatory diagram of an ion source, and FIG. 3 is a schematic explanatory diagram of a conventional ion implantation apparatus. 1, 1a, 1b...Ion source, 2, 2a, 2b
... Housing, 3 ... Extraction electrode, 4 ... Separation electromagnet, 5 ... Variable slit, 6 ... Accelerator tube, 7
...Accumulation lens, 8, 9...Scanning electrode, 10...
Deflection electrode, 11... End station, 12...
...Wafer, 14...Arc chamber, 17...
Filament, 19...Oven assembly.
Claims (1)
オンを分離し目的イオンのみを加速してウエハに
注入する装置において、 上記イオン源を複数基並設して交換自在とした
ことを特徴とするイオン注入装置。[Scope of Claim for Utility Model Registration] In an apparatus that extracts ions generated by an ion source, separates unnecessary ions, accelerates only the desired ions, and implants them into a wafer, a plurality of the above ion sources are installed in parallel and can be exchanged freely. An ion implantation device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14469685U JPS6253558U (en) | 1985-09-21 | 1985-09-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14469685U JPS6253558U (en) | 1985-09-21 | 1985-09-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6253558U true JPS6253558U (en) | 1987-04-02 |
Family
ID=31055539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14469685U Pending JPS6253558U (en) | 1985-09-21 | 1985-09-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6253558U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006196465A (en) * | 1999-12-13 | 2006-07-27 | Semequip Inc | Ion implantation ion source, system, and method |
| WO2012068034A1 (en) * | 2010-11-19 | 2012-05-24 | Corning Incorporated | Semiconductor structure made using improved multiple ion implantation process |
| JP2014154250A (en) * | 2013-02-05 | 2014-08-25 | Japan Atomic Energy Agency | Ion generation method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5787055A (en) * | 1980-11-20 | 1982-05-31 | Seiko Epson Corp | Ion implantation device |
| JPS5923151B2 (en) * | 1976-02-17 | 1984-05-31 | 松下電器産業株式会社 | color imaging device |
| JPS5923152B2 (en) * | 1976-07-06 | 1984-05-31 | ソニー株式会社 | Video signal recording and playback device |
| JPS61133544A (en) * | 1984-11-30 | 1986-06-20 | Toshiba Corp | Ion implanting apparatus |
| JPS6261257A (en) * | 1985-09-09 | 1987-03-17 | Tokyo Electron Ltd | Ion implantation method |
-
1985
- 1985-09-21 JP JP14469685U patent/JPS6253558U/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5923151B2 (en) * | 1976-02-17 | 1984-05-31 | 松下電器産業株式会社 | color imaging device |
| JPS5923152B2 (en) * | 1976-07-06 | 1984-05-31 | ソニー株式会社 | Video signal recording and playback device |
| JPS5787055A (en) * | 1980-11-20 | 1982-05-31 | Seiko Epson Corp | Ion implantation device |
| JPS61133544A (en) * | 1984-11-30 | 1986-06-20 | Toshiba Corp | Ion implanting apparatus |
| JPS6261257A (en) * | 1985-09-09 | 1987-03-17 | Tokyo Electron Ltd | Ion implantation method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006196465A (en) * | 1999-12-13 | 2006-07-27 | Semequip Inc | Ion implantation ion source, system, and method |
| WO2012068034A1 (en) * | 2010-11-19 | 2012-05-24 | Corning Incorporated | Semiconductor structure made using improved multiple ion implantation process |
| CN103403836A (en) * | 2010-11-19 | 2013-11-20 | 康宁股份有限公司 | Semiconductor structure made using improved multiple ion implantation process |
| JP2014154250A (en) * | 2013-02-05 | 2014-08-25 | Japan Atomic Energy Agency | Ion generation method |