JPH038581B2 - - Google Patents
Info
- Publication number
- JPH038581B2 JPH038581B2 JP2388082A JP2388082A JPH038581B2 JP H038581 B2 JPH038581 B2 JP H038581B2 JP 2388082 A JP2388082 A JP 2388082A JP 2388082 A JP2388082 A JP 2388082A JP H038581 B2 JPH038581 B2 JP H038581B2
- Authority
- JP
- Japan
- Prior art keywords
- polyimide
- silicon nitride
- nitride film
- electrode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920001721 polyimide Polymers 0.000 claims description 33
- 239000004642 Polyimide Substances 0.000 claims description 32
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 2
- 230000001681 protective effect Effects 0.000 description 9
- 239000002904 solvent Substances 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2388082A JPS58140139A (ja) | 1982-02-16 | 1982-02-16 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2388082A JPS58140139A (ja) | 1982-02-16 | 1982-02-16 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58140139A JPS58140139A (ja) | 1983-08-19 |
| JPH038581B2 true JPH038581B2 (zh) | 1991-02-06 |
Family
ID=12122760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2388082A Granted JPS58140139A (ja) | 1982-02-16 | 1982-02-16 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58140139A (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60165739A (ja) * | 1984-02-07 | 1985-08-28 | Nec Kansai Ltd | 半導体装置の製造方法 |
| JPS63104425A (ja) * | 1986-10-09 | 1988-05-09 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | バイアの形成方法 |
| JPH02235359A (ja) * | 1989-03-09 | 1990-09-18 | Oki Electric Ind Co Ltd | 多層配線形成方法 |
| JPH02238627A (ja) * | 1989-03-10 | 1990-09-20 | Nec Corp | 半導体装置 |
| US9515135B2 (en) | 2003-01-15 | 2016-12-06 | Cree, Inc. | Edge termination structures for silicon carbide devices |
| US7026650B2 (en) | 2003-01-15 | 2006-04-11 | Cree, Inc. | Multiple floating guard ring edge termination for silicon carbide devices |
-
1982
- 1982-02-16 JP JP2388082A patent/JPS58140139A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58140139A (ja) | 1983-08-19 |
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