JPH0385642U - - Google Patents
Info
- Publication number
- JPH0385642U JPH0385642U JP1989147970U JP14797089U JPH0385642U JP H0385642 U JPH0385642 U JP H0385642U JP 1989147970 U JP1989147970 U JP 1989147970U JP 14797089 U JP14797089 U JP 14797089U JP H0385642 U JPH0385642 U JP H0385642U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- front side
- circuit board
- circuit element
- semiconductor circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81192—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
Landscapes
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Wire Bonding (AREA)
Description
第１図は本考案に係る電極構造の一実施例を示
す概略断面図である。第２，３図はそれぞれ従来
の電極構造を示す概略断面図である。
１２……半導体素子（半導体回路素子）、１３
……回路基板、１５……アルミニウム電極（Ｂ電
極）、１８……突起電極（電極構造）、２０……
Ａ電極、２１……絶縁層、Ｔ２１……突起厚さ。
FIG. 1 is a schematic sectional view showing an embodiment of an electrode structure according to the present invention. 2 and 3 are schematic cross-sectional views showing conventional electrode structures, respectively. 12...Semiconductor element (semiconductor circuit element), 13
... Circuit board, 15 ... Aluminum electrode (B electrode), 18 ... Projection electrode (electrode structure), 20 ...
A electrode, 21...Insulating layer, T21 ...Protrusion thickness.
Claims (1)
続する電極構造において、導体からなり、半導体
回路素子および回路基板のいずれか一方の表部上
に、他方の表部上に形成されたＢ電極に対向して
設けられたＡ電極と、絶縁部材からなり、Ａ電極
と一方の表部との間に、一方の表部から他方の表
部側に突起しＡ電極がＢ電極に接続可能な突起厚
さを有するよう設けられた絶縁層と、を備えたこ
とを特徴とする電極構造。 In an electrode structure that connects the front side of a semiconductor circuit element and the front side of a circuit board, a B made of a conductor and formed on the front side of one of the semiconductor circuit element and the circuit board and on the other side. It consists of an A electrode provided facing the electrode and an insulating member, and between the A electrode and one surface, it protrudes from one surface to the other surface so that the A electrode can be connected to the B electrode. an insulating layer provided to have a protrusion thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989147970U JPH0385642U (en) | 1989-12-22 | 1989-12-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989147970U JPH0385642U (en) | 1989-12-22 | 1989-12-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0385642U true JPH0385642U (en) | 1991-08-29 |
Family
ID=31694439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989147970U Pending JPH0385642U (en) | 1989-12-22 | 1989-12-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0385642U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000070670A1 (en) * | 1999-05-12 | 2000-11-23 | Hitachi, Ltd. | Semiconductor device and method for manufacturing the same, and electronic device |
| WO2008072510A1 (en) * | 2006-12-15 | 2008-06-19 | Sharp Kabushiki Kaisha | Semiconductor device |
-
1989
- 1989-12-22 JP JP1989147970U patent/JPH0385642U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000070670A1 (en) * | 1999-05-12 | 2000-11-23 | Hitachi, Ltd. | Semiconductor device and method for manufacturing the same, and electronic device |
| WO2008072510A1 (en) * | 2006-12-15 | 2008-06-19 | Sharp Kabushiki Kaisha | Semiconductor device |