JPH0379910B2 - - Google Patents
Info
- Publication number
- JPH0379910B2 JPH0379910B2 JP57074885A JP7488582A JPH0379910B2 JP H0379910 B2 JPH0379910 B2 JP H0379910B2 JP 57074885 A JP57074885 A JP 57074885A JP 7488582 A JP7488582 A JP 7488582A JP H0379910 B2 JPH0379910 B2 JP H0379910B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- circuit
- photoelectric conversion
- block
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 54
- 239000010408 film Substances 0.000 claims description 24
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 238000001514 detection method Methods 0.000 claims description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 12
- 238000009825 accumulation Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 description 10
- 230000004044 response Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/40—Picture signal circuits
- H04N1/40056—Circuits for driving or energising particular reading heads or original illumination means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/04—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa
- H04N1/19—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays
- H04N1/191—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays the array comprising a one-dimensional array, or a combination of one-dimensional arrays, or a substantially one-dimensional array, e.g. an array of staggered elements
- H04N1/192—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line
- H04N1/193—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line using electrically scanned linear arrays, e.g. linear CCD arrays
- H04N1/1931—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line using electrically scanned linear arrays, e.g. linear CCD arrays with scanning elements electrically interconnected in groups
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57074885A JPS58191565A (ja) | 1982-05-04 | 1982-05-04 | 固体光電変換装置 |
| US06/489,748 US4575638A (en) | 1982-05-04 | 1983-04-29 | Thin film photoelectric converting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57074885A JPS58191565A (ja) | 1982-05-04 | 1982-05-04 | 固体光電変換装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58191565A JPS58191565A (ja) | 1983-11-08 |
| JPH0379910B2 true JPH0379910B2 (zh) | 1991-12-20 |
Family
ID=13560261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57074885A Granted JPS58191565A (ja) | 1982-05-04 | 1982-05-04 | 固体光電変換装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58191565A (zh) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6126365A (ja) * | 1984-07-17 | 1986-02-05 | Canon Inc | 画像読取装置 |
| JPS6126363A (ja) * | 1984-07-17 | 1986-02-05 | Canon Inc | 画像読取装置 |
| JPS6126364A (ja) * | 1984-07-17 | 1986-02-05 | Canon Inc | 画像読取装置 |
| JPH07118526B2 (ja) * | 1984-10-30 | 1995-12-18 | セイコーエプソン株式会社 | 固体撮像装置 |
| JPH07118761B2 (ja) * | 1985-09-20 | 1995-12-18 | 富士ゼロックス株式会社 | 原稿読み取り装置 |
| JPS62124769A (ja) * | 1985-11-25 | 1987-06-06 | Matsushita Electric Ind Co Ltd | 密着型イメ−ジセンサ |
| JPS639358A (ja) * | 1986-06-30 | 1988-01-16 | Fuji Xerox Co Ltd | 原稿読取装置 |
| JPH0734430B2 (ja) * | 1988-02-20 | 1995-04-12 | 株式会社富士通ゼネラル | 薄膜半導体装置の製造方法 |
| JPH0372770A (ja) * | 1990-07-17 | 1991-03-27 | Seiko Epson Corp | 読み取り装置 |
| JPH0653471A (ja) * | 1992-10-19 | 1994-02-25 | Fuji Xerox Co Ltd | 原稿読み取り装置の駆動方法 |
| CN103296037B (zh) * | 2012-07-12 | 2016-06-15 | 上海天马微电子有限公司 | 接触垫、平板图像探测器及其制作方法 |
-
1982
- 1982-05-04 JP JP57074885A patent/JPS58191565A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58191565A (ja) | 1983-11-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4862237A (en) | Solid state image sensor | |
| US4271420A (en) | Solid-state image pickup device | |
| EP2287911A2 (en) | Photoelectric X-ray converter, its driving method, and system including the photoelectric X-ray converter | |
| US4575638A (en) | Thin film photoelectric converting device | |
| JPH0379910B2 (zh) | ||
| JPS6156912B2 (zh) | ||
| EP0260824B1 (en) | Circuit for a photosensitive pixel with exposed blocking element | |
| JPH0568132A (ja) | 原稿読取り装置 | |
| US4886977A (en) | Photoelectric converter provided with voltage dividing means | |
| JPH0380385B2 (zh) | ||
| US5539458A (en) | TFT-drive image sensor capable of producing an offset-free image signal | |
| JPH0678113A (ja) | コンタクト映像センサのモジュール | |
| Ozawa et al. | Amorphous silicon linear image sensor | |
| JPH07115182A (ja) | メモリー機能付き光電変換素子および固体撮像装置 | |
| KR950003486B1 (ko) | 밀착형 이메지 센서 | |
| JPS6217877B2 (zh) | ||
| JPS6392053A (ja) | 画像読取装置 | |
| JPH0738437B2 (ja) | イメ−ジセンサ | |
| JPH07110055B2 (ja) | 二次元密着型イメージセンサ | |
| KR930007530B1 (ko) | 이미지 센서 | |
| KR960006196B1 (ko) | 밀착형 이메지 센서 | |
| JPS59140766A (ja) | 原稿読取装置 | |
| JPH06283695A (ja) | ２次元固体撮像装置および撮像方式 | |
| JPH0662175A (ja) | 密着型２次元イメージセンサ | |
| JPH029499B2 (zh) |