JPH0377677B2 - - Google Patents

Info

Publication number
JPH0377677B2
JPH0377677B2 JP10781882A JP10781882A JPH0377677B2 JP H0377677 B2 JPH0377677 B2 JP H0377677B2 JP 10781882 A JP10781882 A JP 10781882A JP 10781882 A JP10781882 A JP 10781882A JP H0377677 B2 JPH0377677 B2 JP H0377677B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
active
layer
active semiconductor
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10781882A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58225680A (ja
Inventor
Kenichi Kasahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP10781882A priority Critical patent/JPS58225680A/ja
Publication of JPS58225680A publication Critical patent/JPS58225680A/ja
Publication of JPH0377677B2 publication Critical patent/JPH0377677B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
JP10781882A 1982-06-23 1982-06-23 半導体レ−ザ Granted JPS58225680A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10781882A JPS58225680A (ja) 1982-06-23 1982-06-23 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10781882A JPS58225680A (ja) 1982-06-23 1982-06-23 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS58225680A JPS58225680A (ja) 1983-12-27
JPH0377677B2 true JPH0377677B2 (fr) 1991-12-11

Family

ID=14468808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10781882A Granted JPS58225680A (ja) 1982-06-23 1982-06-23 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS58225680A (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8304008A (nl) * 1983-11-22 1985-06-17 Philips Nv Halfgeleiderinrichting voor het opwekken van elektro-magnetische straling.
JPS60235491A (ja) * 1984-05-08 1985-11-22 Mitsubishi Electric Corp 半導体レ−ザ
JPS6267890A (ja) * 1985-09-20 1987-03-27 Hitachi Ltd 半導体レ−ザ
JP2800897B2 (ja) * 1987-11-27 1998-09-21 株式会社日立製作所 光増幅器
DE3808875A1 (de) * 1988-03-17 1989-09-28 Standard Elektrik Lorenz Ag Halbleiteranordnung zur erzeugung einer periodischen brechungsindexverteilung und/oder periodischen verstaerkungsverteilung
JPH0831658B2 (ja) * 1988-05-11 1996-03-27 三菱化学株式会社 半導体レーザ及びその製造方法
JPH02144983A (ja) * 1988-11-25 1990-06-04 Agency Of Ind Science & Technol 複数の活性層を有する半導体レーザ装置
US5075743A (en) * 1989-06-06 1991-12-24 Cornell Research Foundation, Inc. Quantum well optical device on silicon

Also Published As

Publication number Publication date
JPS58225680A (ja) 1983-12-27

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