JPH03765B2 - - Google Patents
Info
- Publication number
- JPH03765B2 JPH03765B2 JP57194111A JP19411182A JPH03765B2 JP H03765 B2 JPH03765 B2 JP H03765B2 JP 57194111 A JP57194111 A JP 57194111A JP 19411182 A JP19411182 A JP 19411182A JP H03765 B2 JPH03765 B2 JP H03765B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- radiation
- pattern
- layer
- sensitive resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57194111A JPS5984427A (ja) | 1982-11-04 | 1982-11-04 | パタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57194111A JPS5984427A (ja) | 1982-11-04 | 1982-11-04 | パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5984427A JPS5984427A (ja) | 1984-05-16 |
| JPH03765B2 true JPH03765B2 (Sortimente) | 1991-01-08 |
Family
ID=16319099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57194111A Granted JPS5984427A (ja) | 1982-11-04 | 1982-11-04 | パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5984427A (Sortimente) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH079875B2 (ja) * | 1985-09-19 | 1995-02-01 | 沖電気工業株式会社 | 半導体装置の製造方法 |
| GB2442030A (en) * | 2006-09-19 | 2008-03-26 | Innos Ltd | Resist exposure and patterning process |
-
1982
- 1982-11-04 JP JP57194111A patent/JPS5984427A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5984427A (ja) | 1984-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3355239B2 (ja) | パターンの形成方法 | |
| KR0170253B1 (ko) | 실리레이션을 이용한 사진식각방법 | |
| JPH07211631A (ja) | 多層レジストパターン形成方法 | |
| JPS6323657B2 (Sortimente) | ||
| JPH076058B2 (ja) | 金属リフトオフ方法 | |
| JP2532589B2 (ja) | 微細パタ―ン形成方法 | |
| US5922516A (en) | Bi-layer silylation process | |
| JPH0219970B2 (Sortimente) | ||
| JPH03765B2 (Sortimente) | ||
| JPH035653B2 (Sortimente) | ||
| TW200300962A (en) | Improved lithography process for transparent substrates | |
| EP0104235A4 (en) | METHOD OF FORMING A HYBRID LITHOGRAPHIC PROTECTION MATERIAL WITH ELECTRONIC / OPTICAL RADIUS. | |
| JPH035654B2 (Sortimente) | ||
| JPS59155926A (ja) | パタ−ン形成方法 | |
| JPH05848B2 (Sortimente) | ||
| JP3421268B2 (ja) | パターン形成法 | |
| JP2635613B2 (ja) | レジストパターン形成方法 | |
| JP2712407B2 (ja) | 2層フォトレジストを用いた微細パターンの形成方法 | |
| JPH03283418A (ja) | レジストパターン形成方法 | |
| JP3017776B2 (ja) | パターン形成方法 | |
| JP4348320B2 (ja) | 配線構造の製造方法 | |
| JPS588131B2 (ja) | 半導体装置の製造方法 | |
| JP3149601B2 (ja) | 半導体装置のコンタクトホール形成方法 | |
| KR20040081678A (ko) | 사진 식각 공정을 이용한 패턴 형성 방법 | |
| JPS5951527A (ja) | パタ−ン形成方法 |