JPH0374036B2 - - Google Patents
Info
- Publication number
- JPH0374036B2 JPH0374036B2 JP59238903A JP23890384A JPH0374036B2 JP H0374036 B2 JPH0374036 B2 JP H0374036B2 JP 59238903 A JP59238903 A JP 59238903A JP 23890384 A JP23890384 A JP 23890384A JP H0374036 B2 JPH0374036 B2 JP H0374036B2
- Authority
- JP
- Japan
- Prior art keywords
- potential
- diffusion layer
- well
- integrated circuit
- type diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59238903A JPS61116866A (ja) | 1984-11-13 | 1984-11-13 | 半導体集積回路装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59238903A JPS61116866A (ja) | 1984-11-13 | 1984-11-13 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61116866A JPS61116866A (ja) | 1986-06-04 |
JPH0374036B2 true JPH0374036B2 (enrdf_load_stackoverflow) | 1991-11-25 |
Family
ID=17036980
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59238903A Granted JPS61116866A (ja) | 1984-11-13 | 1984-11-13 | 半導体集積回路装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61116866A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63287053A (ja) * | 1987-05-19 | 1988-11-24 | Nec Corp | 半導体集積回路装置 |
JPS63318767A (ja) * | 1987-06-22 | 1988-12-27 | Nec Corp | 相補型半導体集積回路 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5848960A (ja) * | 1982-09-03 | 1983-03-23 | Hitachi Ltd | 半導体装置 |
-
1984
- 1984-11-13 JP JP59238903A patent/JPS61116866A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61116866A (ja) | 1986-06-04 |
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