JPH0374004B2 - - Google Patents
Info
- Publication number
- JPH0374004B2 JPH0374004B2 JP59126322A JP12632284A JPH0374004B2 JP H0374004 B2 JPH0374004 B2 JP H0374004B2 JP 59126322 A JP59126322 A JP 59126322A JP 12632284 A JP12632284 A JP 12632284A JP H0374004 B2 JPH0374004 B2 JP H0374004B2
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- layer
- semiconductor
- temperature
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 description 18
- 230000000903 blocking effect Effects 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Thermistors And Varistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59126322A JPS616881A (ja) | 1984-06-21 | 1984-06-21 | 半導体温度センサ−素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59126322A JPS616881A (ja) | 1984-06-21 | 1984-06-21 | 半導体温度センサ−素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS616881A JPS616881A (ja) | 1986-01-13 |
| JPH0374004B2 true JPH0374004B2 (xx) | 1991-11-25 |
Family
ID=14932313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59126322A Granted JPS616881A (ja) | 1984-06-21 | 1984-06-21 | 半導体温度センサ−素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS616881A (xx) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4322650A1 (de) * | 1993-07-07 | 1995-01-12 | Siemens Ag | Temperatursensor mit einem p-n-Übergang |
| JP2785797B2 (ja) * | 1996-04-10 | 1998-08-13 | 日本電気株式会社 | 半導体温度センサ素子 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51129191A (en) * | 1975-05-02 | 1976-11-10 | Fujitsu Ltd | Semiconductor device |
| JPS531191A (en) * | 1976-05-19 | 1978-01-07 | Basf Ag | Catalysts for manufacturing ethylene oxide |
-
1984
- 1984-06-21 JP JP59126322A patent/JPS616881A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51129191A (en) * | 1975-05-02 | 1976-11-10 | Fujitsu Ltd | Semiconductor device |
| JPS531191A (en) * | 1976-05-19 | 1978-01-07 | Basf Ag | Catalysts for manufacturing ethylene oxide |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS616881A (ja) | 1986-01-13 |
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