JPH037153B2 - - Google Patents
Info
- Publication number
- JPH037153B2 JPH037153B2 JP58002680A JP268083A JPH037153B2 JP H037153 B2 JPH037153 B2 JP H037153B2 JP 58002680 A JP58002680 A JP 58002680A JP 268083 A JP268083 A JP 268083A JP H037153 B2 JPH037153 B2 JP H037153B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor layer
- type
- semiconductor
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 36
- 239000013078 crystal Substances 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 9
- 230000000737 periodic effect Effects 0.000 claims description 8
- 238000005253 cladding Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 20
- 230000010355 oscillation Effects 0.000 description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 11
- 239000007791 liquid phase Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 125000005842 heteroatom Chemical group 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58002680A JPS59127892A (ja) | 1983-01-11 | 1983-01-11 | 半導体レ−ザとその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58002680A JPS59127892A (ja) | 1983-01-11 | 1983-01-11 | 半導体レ−ザとその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59127892A JPS59127892A (ja) | 1984-07-23 |
| JPH037153B2 true JPH037153B2 (ko) | 1991-01-31 |
Family
ID=11536010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58002680A Granted JPS59127892A (ja) | 1983-01-11 | 1983-01-11 | 半導体レ−ザとその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59127892A (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4716570A (en) * | 1985-01-10 | 1987-12-29 | Sharp Kabushiki Kaisha | Distributed feedback semiconductor laser device |
| JPS625682A (ja) * | 1985-07-02 | 1987-01-12 | Mitsubishi Electric Corp | 半導体レ−ザ |
| US4824747A (en) * | 1985-10-21 | 1989-04-25 | General Electric Company | Method of forming a variable width channel |
| US4837775A (en) * | 1985-10-21 | 1989-06-06 | General Electric Company | Electro-optic device having a laterally varying region |
-
1983
- 1983-01-11 JP JP58002680A patent/JPS59127892A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59127892A (ja) | 1984-07-23 |
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