JPH0371399B2 - - Google Patents

Info

Publication number
JPH0371399B2
JPH0371399B2 JP61102984A JP10298486A JPH0371399B2 JP H0371399 B2 JPH0371399 B2 JP H0371399B2 JP 61102984 A JP61102984 A JP 61102984A JP 10298486 A JP10298486 A JP 10298486A JP H0371399 B2 JPH0371399 B2 JP H0371399B2
Authority
JP
Japan
Prior art keywords
crystal
chamber
growth
seed crystal
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61102984A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62256792A (ja
Inventor
Tomoji Yamagami
Yoshitaka Tomomura
Masahiko Kitagawa
Shigeo Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP10298486A priority Critical patent/JPS62256792A/ja
Publication of JPS62256792A publication Critical patent/JPS62256792A/ja
Publication of JPH0371399B2 publication Critical patent/JPH0371399B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP10298486A 1986-04-30 1986-04-30 化合物半導体単結晶の気相成長方法 Granted JPS62256792A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10298486A JPS62256792A (ja) 1986-04-30 1986-04-30 化合物半導体単結晶の気相成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10298486A JPS62256792A (ja) 1986-04-30 1986-04-30 化合物半導体単結晶の気相成長方法

Publications (2)

Publication Number Publication Date
JPS62256792A JPS62256792A (ja) 1987-11-09
JPH0371399B2 true JPH0371399B2 (cs) 1991-11-13

Family

ID=14341980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10298486A Granted JPS62256792A (ja) 1986-04-30 1986-04-30 化合物半導体単結晶の気相成長方法

Country Status (1)

Country Link
JP (1) JPS62256792A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101311401B1 (ko) * 2012-10-31 2013-09-25 장희선 철근 인양장치

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0712030B2 (ja) * 1989-12-22 1995-02-08 スタンレー電気株式会社 ▲ｉｉ▼―▲ｖｉ▼族化合物半導体結晶成長装置
US5725659A (en) * 1994-10-03 1998-03-10 Sepehry-Fard; Fareed Solid phase epitaxy reactor, the most cost effective GaAs epitaxial growth technology

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49129694A (cs) * 1973-04-04 1974-12-12
JPS6143275U (ja) * 1984-08-17 1986-03-20 三洋電機株式会社 結晶成長装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101311401B1 (ko) * 2012-10-31 2013-09-25 장희선 철근 인양장치

Also Published As

Publication number Publication date
JPS62256792A (ja) 1987-11-09

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