JPH0370366B2 - - Google Patents

Info

Publication number
JPH0370366B2
JPH0370366B2 JP57151134A JP15113482A JPH0370366B2 JP H0370366 B2 JPH0370366 B2 JP H0370366B2 JP 57151134 A JP57151134 A JP 57151134A JP 15113482 A JP15113482 A JP 15113482A JP H0370366 B2 JPH0370366 B2 JP H0370366B2
Authority
JP
Japan
Prior art keywords
film
soft
silicon dioxide
ray
dioxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57151134A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5940645A (ja
Inventor
Yukio Iimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP57151134A priority Critical patent/JPS5940645A/ja
Publication of JPS5940645A publication Critical patent/JPS5940645A/ja
Publication of JPH0370366B2 publication Critical patent/JPH0370366B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP57151134A 1982-08-31 1982-08-31 軟x線転写用マスク Granted JPS5940645A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57151134A JPS5940645A (ja) 1982-08-31 1982-08-31 軟x線転写用マスク

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57151134A JPS5940645A (ja) 1982-08-31 1982-08-31 軟x線転写用マスク

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP24527891A Division JPH0793257B2 (ja) 1991-06-20 1991-06-20 軟x線転写用マスクの製造法

Publications (2)

Publication Number Publication Date
JPS5940645A JPS5940645A (ja) 1984-03-06
JPH0370366B2 true JPH0370366B2 (en, 2012) 1991-11-07

Family

ID=15512107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57151134A Granted JPS5940645A (ja) 1982-08-31 1982-08-31 軟x線転写用マスク

Country Status (1)

Country Link
JP (1) JPS5940645A (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7351503B2 (en) 2001-01-22 2008-04-01 Photronics, Inc. Fused silica pellicle in intimate contact with the surface of a photomask

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58207635A (ja) * 1982-05-28 1983-12-03 Seiko Epson Corp メンブラン・マスクの製造方法

Also Published As

Publication number Publication date
JPS5940645A (ja) 1984-03-06

Similar Documents

Publication Publication Date Title
US20100167181A1 (en) Photomask for Extreme Ultraviolet Lithography and Method for Fabricating the Same
US4152601A (en) X-ray lithography mask and method for manufacturing the same
US4253029A (en) Mask structure for x-ray lithography
JP3105990B2 (ja) X線マスクおよびx線マスクの製造方法
JP4105919B2 (ja) 半導体デバイス製造におけるパターン転写方法
JPH0370366B2 (en, 2012)
JP2991444B2 (ja) フォトマスクブランクおよびフォトマスク
JPH0423819B2 (en, 2012)
JPH0340935B2 (en, 2012)
JPH0750239A (ja) 軟x線転写用マスクの製造法
JPS641926B2 (en, 2012)
JP2513386B2 (ja) パタ―ン転写方法
JP3195328B2 (ja) X線マスクおよびx線マスクの製造方法
JPH07153679A (ja) 透過型多層膜
JPH0481855B2 (en, 2012)
JPS6045419B2 (ja) 軟x線リソグラフイ−用マスクおよびその製造法
JPH06260397A (ja) X線露光用マスクとその製造方法
JPH0481856B2 (en, 2012)
JPH0441487B2 (en, 2012)
JPH06103617A (ja) 光ディスク用スタンパおよび基板の作製方法
JP2513705B2 (ja) 薄膜トランジスタマトリクスの製造方法
JPS63283023A (ja) X線露光マスク用メンブレンの製造方法
JPS6030138A (ja) X線露光用マスク
JPS5989422A (ja) X線マスクの製造方法
JPS6210013B2 (en, 2012)