JPH0370320B2 - - Google Patents

Info

Publication number
JPH0370320B2
JPH0370320B2 JP61185652A JP18565286A JPH0370320B2 JP H0370320 B2 JPH0370320 B2 JP H0370320B2 JP 61185652 A JP61185652 A JP 61185652A JP 18565286 A JP18565286 A JP 18565286A JP H0370320 B2 JPH0370320 B2 JP H0370320B2
Authority
JP
Japan
Prior art keywords
circuit
current
current mirror
transistor
load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61185652A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6342097A (ja
Inventor
Yukio Yasuda
Shizuaki Zaima
Norio Ikegami
Tetsuo Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP61185652A priority Critical patent/JPS6342097A/ja
Publication of JPS6342097A publication Critical patent/JPS6342097A/ja
Publication of JPH0370320B2 publication Critical patent/JPH0370320B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5645—Multilevel memory with current-mirror arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
JP61185652A 1986-08-07 1986-08-07 多値論理記憶回路 Granted JPS6342097A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61185652A JPS6342097A (ja) 1986-08-07 1986-08-07 多値論理記憶回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61185652A JPS6342097A (ja) 1986-08-07 1986-08-07 多値論理記憶回路

Publications (2)

Publication Number Publication Date
JPS6342097A JPS6342097A (ja) 1988-02-23
JPH0370320B2 true JPH0370320B2 (zh) 1991-11-07

Family

ID=16174509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61185652A Granted JPS6342097A (ja) 1986-08-07 1986-08-07 多値論理記憶回路

Country Status (1)

Country Link
JP (1) JPS6342097A (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
JPH0969293A (ja) * 1995-08-30 1997-03-11 Nec Corp 多値センスアンプ回路
DE60323202D1 (de) 2003-02-21 2008-10-09 St Microelectronics Srl Phasenwechselspeicheranordnung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS524746A (en) * 1975-06-30 1977-01-14 Fujitsu Ltd Semiconductor memory device
JPS60239994A (ja) * 1984-05-15 1985-11-28 Seiko Epson Corp 多値ダイナミツクランダムアクセスメモリ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS524746A (en) * 1975-06-30 1977-01-14 Fujitsu Ltd Semiconductor memory device
JPS60239994A (ja) * 1984-05-15 1985-11-28 Seiko Epson Corp 多値ダイナミツクランダムアクセスメモリ

Also Published As

Publication number Publication date
JPS6342097A (ja) 1988-02-23

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term