JPH0369879B2 - - Google Patents

Info

Publication number
JPH0369879B2
JPH0369879B2 JP58001868A JP186883A JPH0369879B2 JP H0369879 B2 JPH0369879 B2 JP H0369879B2 JP 58001868 A JP58001868 A JP 58001868A JP 186883 A JP186883 A JP 186883A JP H0369879 B2 JPH0369879 B2 JP H0369879B2
Authority
JP
Japan
Prior art keywords
trimethylaluminum
crystal
group
aluminum
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58001868A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59128299A (ja
Inventor
Isao Hino
Tooru Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP186883A priority Critical patent/JPS59128299A/ja
Publication of JPS59128299A publication Critical patent/JPS59128299A/ja
Publication of JPH0369879B2 publication Critical patent/JPH0369879B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP186883A 1983-01-10 1983-01-10 燐化アルミニウム・インジウム単結晶の製造方法 Granted JPS59128299A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP186883A JPS59128299A (ja) 1983-01-10 1983-01-10 燐化アルミニウム・インジウム単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP186883A JPS59128299A (ja) 1983-01-10 1983-01-10 燐化アルミニウム・インジウム単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS59128299A JPS59128299A (ja) 1984-07-24
JPH0369879B2 true JPH0369879B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-11-05

Family

ID=11513521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP186883A Granted JPS59128299A (ja) 1983-01-10 1983-01-10 燐化アルミニウム・インジウム単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS59128299A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761269A (en) * 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US4901670A (en) * 1988-08-22 1990-02-20 Santa Barbara Research Center Elemental mercury source for metal-organic chemical vapor deposition

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834798A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-09-06 1973-05-22
JPS4876472A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-01-13 1973-10-15

Also Published As

Publication number Publication date
JPS59128299A (ja) 1984-07-24

Similar Documents

Publication Publication Date Title
KR100693078B1 (ko) Ａｌ계 Ⅲ-Ⅴ족 화합물 반도체의 기상 성장 방법, Ａｌ계Ⅲ-Ⅴ족 화합물 반도체의 제조 방법 및 제조 장치
JP3879173B2 (ja) 化合物半導体気相成長方法
EP1796150B1 (en) Method for algan vapor-phase growth
JPH0331678B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH01103996A (ja) 化合物半導体の気相成長法
JPH0369879B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS61222911A (ja) 燐化化合物の合成方法
JPS6220160B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0754802B2 (ja) ＧａＡｓ薄膜の気相成長法
JP2736655B2 (ja) 化合物半導体結晶成長方法
JPH0225018A (ja) 半導体装置の製造方法
JPS60169563A (ja) テルル化金属の製造方法及び装置
JPH07118457B2 (ja) Ｉｉ−ｖｉ族半導体物質の金属有機物蒸気相エピタキシ−成長法
Woelk et al. III-Nitride multiwafer MOCVD systems for blue-green LED material
JP3406504B2 (ja) 半導体の製造方法
JP2753832B2 (ja) 第▲ｉｉｉ▼・ｖ族化合物半導体の気相成長法
JPH0535719B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2952831B2 (ja) 半導体装置の製造方法
JP2736417B2 (ja) 半導体素子の製法
JP2714824B2 (ja) 分子線エピタキシャル成長方法及びそれを実施する装置
JP2620578B2 (ja) 化合物半導体のエピタキシャル層の製造方法
JPH0897149A (ja) 有機金属気相成長方法及び有機金属気相成長装置
JPH0760800B2 (ja) 化合物半導体の気相成長法
JPH01173708A (ja) 半導体素子
JPH02254715A (ja) 化合物半導体結晶層の製造方法