JPH036665B2 - - Google Patents
Info
- Publication number
- JPH036665B2 JPH036665B2 JP56086212A JP8621281A JPH036665B2 JP H036665 B2 JPH036665 B2 JP H036665B2 JP 56086212 A JP56086212 A JP 56086212A JP 8621281 A JP8621281 A JP 8621281A JP H036665 B2 JPH036665 B2 JP H036665B2
- Authority
- JP
- Japan
- Prior art keywords
- fet
- electrode
- memory cell
- current
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 description 42
- 230000000295 complement effect Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000010354 integration Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000022131 cell cycle Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56086212A JPS57201067A (en) | 1981-06-04 | 1981-06-04 | Semiconductor memory cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56086212A JPS57201067A (en) | 1981-06-04 | 1981-06-04 | Semiconductor memory cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57201067A JPS57201067A (en) | 1982-12-09 |
| JPH036665B2 true JPH036665B2 (ko) | 1991-01-30 |
Family
ID=13880469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56086212A Granted JPS57201067A (en) | 1981-06-04 | 1981-06-04 | Semiconductor memory cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57201067A (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4704368A (en) * | 1985-10-30 | 1987-11-03 | International Business Machines Corporation | Method of making trench-incorporated monolithic semiconductor capacitor and high density dynamic memory cells including the capacitor |
| JP2682021B2 (ja) * | 1988-06-29 | 1997-11-26 | 富士通株式会社 | 半導体メモリ装置 |
-
1981
- 1981-06-04 JP JP56086212A patent/JPS57201067A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57201067A (en) | 1982-12-09 |
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