JPH0363225B2 - - Google Patents
Info
- Publication number
- JPH0363225B2 JPH0363225B2 JP56197843A JP19784381A JPH0363225B2 JP H0363225 B2 JPH0363225 B2 JP H0363225B2 JP 56197843 A JP56197843 A JP 56197843A JP 19784381 A JP19784381 A JP 19784381A JP H0363225 B2 JPH0363225 B2 JP H0363225B2
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- point metal
- layer
- film
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 238000002844 melting Methods 0.000 claims description 22
- 230000008018 melting Effects 0.000 claims description 15
- 229910021332 silicide Inorganic materials 0.000 claims description 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 10
- 229910052750 molybdenum Inorganic materials 0.000 description 10
- 239000011733 molybdenum Substances 0.000 description 10
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910016006 MoSi Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- -1 arsenic ions Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56197843A JPS5898968A (ja) | 1981-12-09 | 1981-12-09 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56197843A JPS5898968A (ja) | 1981-12-09 | 1981-12-09 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5898968A JPS5898968A (ja) | 1983-06-13 |
| JPH0363225B2 true JPH0363225B2 (enrdf_load_stackoverflow) | 1991-09-30 |
Family
ID=16381257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56197843A Granted JPS5898968A (ja) | 1981-12-09 | 1981-12-09 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5898968A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4920071A (en) * | 1985-03-15 | 1990-04-24 | Fairchild Camera And Instrument Corporation | High temperature interconnect system for an integrated circuit |
| JP2507567B2 (ja) * | 1988-11-25 | 1996-06-12 | 三菱電機株式会社 | 絶縁体基板上の半導体層に形成されたｍｏｓ型電界効果トランジスタ |
| JP3086556B2 (ja) * | 1993-02-09 | 2000-09-11 | 株式会社神戸製鋼所 | 半導体ダイヤモンド層上の耐熱性オーミック電極及びその形成方法 |
-
1981
- 1981-12-09 JP JP56197843A patent/JPS5898968A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5898968A (ja) | 1983-06-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2537413B2 (ja) | 半導体装置およびその製造方法 | |
| US4551908A (en) | Process of forming electrodes and interconnections on silicon semiconductor devices | |
| US4533935A (en) | Semiconductor device and a method for manufacturing the same | |
| US5466638A (en) | Method of manufacturing a metal interconnect with high resistance to electromigration | |
| US6198143B1 (en) | Semiconductor device including a layer of thermally stable titanium silicide | |
| US5457069A (en) | Process for fabricating device having titanium-tungsten barrier layer and silicide layer contacted shallow junction simultaneously formed | |
| JPH02290019A (ja) | 電極配線構造体と半導体集積回路装置の製造方法 | |
| JP3103063B2 (ja) | 金属ポリサイド構造の熱的安定性を改善する方法 | |
| JP2841386B2 (ja) | 半導体装置およびその製造方法 | |
| KR0161380B1 (ko) | 반도체장치의 트랜지스터 및 그 제조방법 | |
| JPH0363225B2 (enrdf_load_stackoverflow) | ||
| JPS61144872A (ja) | 半導体装置 | |
| JPH0363224B2 (enrdf_load_stackoverflow) | ||
| US5612236A (en) | Method of forming a silicon semiconductor device using doping during deposition of polysilicon | |
| US20020055251A1 (en) | Local interconnect structure for integrated circuit devices, source structure for the same, and method for fabricating the same | |
| KR950009283B1 (ko) | 반도체장치의 제조방법 | |
| JPS59197162A (ja) | 半導体装置 | |
| JP2817518B2 (ja) | 半導体装置およびその製造方法 | |
| JP2003526198A (ja) | 電界効果トランジスタのチャネル領域へのシリサイドの侵入を防ぐための基板のアモルファス化 | |
| JPS59208773A (ja) | 半導体装置の製造方法 | |
| JPH0763060B2 (ja) | 半導体装置の製造方法 | |
| JPH0126172B2 (enrdf_load_stackoverflow) | ||
| JPH0795539B2 (ja) | 集積回路およびその製法 | |
| JPH03292729A (ja) | スパッタリングターゲットおよび半導体装置の製造方法 | |
| JPH0387061A (ja) | 半導体装置 |