JPS5898968A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS5898968A JPS5898968A JP56197843A JP19784381A JPS5898968A JP S5898968 A JPS5898968 A JP S5898968A JP 56197843 A JP56197843 A JP 56197843A JP 19784381 A JP19784381 A JP 19784381A JP S5898968 A JPS5898968 A JP S5898968A
- Authority
- JP
- Japan
- Prior art keywords
- film
- melting point
- layer
- molybdenum
- point metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 238000002844 melting Methods 0.000 claims abstract description 20
- 230000008018 melting Effects 0.000 claims abstract description 16
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 13
- 239000011733 molybdenum Substances 0.000 abstract description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 12
- 238000010438 heat treatment Methods 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 9
- -1 Arsenic ions Chemical class 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229910052785 arsenic Inorganic materials 0.000 abstract description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 abstract description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 2
- 239000010936 titanium Substances 0.000 abstract 2
- 229910052719 titanium Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 235000006732 Torreya nucifera Nutrition 0.000 description 1
- 244000111306 Torreya nucifera Species 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56197843A JPS5898968A (ja) | 1981-12-09 | 1981-12-09 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56197843A JPS5898968A (ja) | 1981-12-09 | 1981-12-09 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5898968A true JPS5898968A (ja) | 1983-06-13 |
| JPH0363225B2 JPH0363225B2 (enrdf_load_stackoverflow) | 1991-09-30 |
Family
ID=16381257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56197843A Granted JPS5898968A (ja) | 1981-12-09 | 1981-12-09 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5898968A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5125007A (en) * | 1988-11-25 | 1992-06-23 | Mitsubishi Denki Kabushiki Kaisha | Thin-film soi-mosfet with a body region |
| US5414301A (en) * | 1985-03-15 | 1995-05-09 | National Semiconductor Corporation | High temperature interconnect system for an integrated circuit |
| US5436505A (en) * | 1993-02-09 | 1995-07-25 | Kabushiki Kaisha Kobe Seiko Sho | Heat-resisting ohmic contact on semiconductor diamond layer |
-
1981
- 1981-12-09 JP JP56197843A patent/JPS5898968A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5414301A (en) * | 1985-03-15 | 1995-05-09 | National Semiconductor Corporation | High temperature interconnect system for an integrated circuit |
| US5125007A (en) * | 1988-11-25 | 1992-06-23 | Mitsubishi Denki Kabushiki Kaisha | Thin-film soi-mosfet with a body region |
| US5436505A (en) * | 1993-02-09 | 1995-07-25 | Kabushiki Kaisha Kobe Seiko Sho | Heat-resisting ohmic contact on semiconductor diamond layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0363225B2 (enrdf_load_stackoverflow) | 1991-09-30 |
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