JPH0363221B2 - - Google Patents
Info
- Publication number
- JPH0363221B2 JPH0363221B2 JP56200198A JP20019881A JPH0363221B2 JP H0363221 B2 JPH0363221 B2 JP H0363221B2 JP 56200198 A JP56200198 A JP 56200198A JP 20019881 A JP20019881 A JP 20019881A JP H0363221 B2 JPH0363221 B2 JP H0363221B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- type
- main surface
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
Landscapes
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56200198A JPS58102549A (ja) | 1981-12-14 | 1981-12-14 | 半導体集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56200198A JPS58102549A (ja) | 1981-12-14 | 1981-12-14 | 半導体集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58102549A JPS58102549A (ja) | 1983-06-18 |
| JPH0363221B2 true JPH0363221B2 (cg-RX-API-DMAC7.html) | 1991-09-30 |
Family
ID=16420426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56200198A Granted JPS58102549A (ja) | 1981-12-14 | 1981-12-14 | 半導体集積回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58102549A (cg-RX-API-DMAC7.html) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54122983A (en) * | 1978-03-17 | 1979-09-22 | Hitachi Ltd | Semiconductor integrated circuit |
| FR2458146A1 (fr) * | 1979-05-29 | 1980-12-26 | Thomson Csf | Structure integree comportant un transistor et trois diodes antisaturation |
| JPS5617051A (en) * | 1979-07-20 | 1981-02-18 | Hitachi Ltd | Semiconductor junction capacitor device |
| JPS5632759A (en) * | 1979-08-27 | 1981-04-02 | Shindengen Electric Mfg Co Ltd | Full-wave rectifying semiconductor device |
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1981
- 1981-12-14 JP JP56200198A patent/JPS58102549A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58102549A (ja) | 1983-06-18 |