JPH0362302B2 - - Google Patents

Info

Publication number

JPH0362302B2

JPH0362302B2 JP25969085A JP25969085A JPH0362302B2 JP H0362302 B2 JPH0362302 B2 JP H0362302B2 JP 25969085 A JP25969085 A JP 25969085A JP 25969085 A JP25969085 A JP 25969085A JP H0362302 B2 JPH0362302 B2 JP H0362302B2

Authority

JP

Japan

Prior art keywords

semiconductor

layer

drain

carrier supply

source

Prior art date

1985-11-21

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 239000004065 semiconductor Substances 0.000 claims description 55
• 239000012535 impurity Substances 0.000 claims description 5
• 239000000758 substrate Substances 0.000 description 9
• 238000010586 diagram Methods 0.000 description 8
• 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
• 230000004888 barrier function Effects 0.000 description 6
• 230000000694 effects Effects 0.000 description 5
• 230000010354 integration Effects 0.000 description 4
• 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
• 238000004519 manufacturing process Methods 0.000 description 3
• 239000000969 carrier Substances 0.000 description 2
• 150000001875 compounds Chemical class 0.000 description 2
• 230000007850 degeneration Effects 0.000 description 2
• 238000000034 method Methods 0.000 description 2
• 230000005641 tunneling Effects 0.000 description 2
• 229910017115 AlSb Inorganic materials 0.000 description 1
• 229910005542 GaSb Inorganic materials 0.000 description 1
• 229910004262 HgTe Inorganic materials 0.000 description 1
• 229910000673 Indium arsenide Inorganic materials 0.000 description 1
• -1 Semiconductor FETs Chemical class 0.000 description 1
• UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
• 238000000151 deposition Methods 0.000 description 1
• 238000005516 engineering process Methods 0.000 description 1
• 230000005669 field effect Effects 0.000 description 1
• 239000004047 hole gas Substances 0.000 description 1
• RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
• 239000012212 insulator Substances 0.000 description 1
• 150000002500 ions Chemical class 0.000 description 1
• 239000000463 material Substances 0.000 description 1
• 229910044991 metal oxide Inorganic materials 0.000 description 1
• 150000004706 metal oxides Chemical class 0.000 description 1
• 238000001451 molecular beam epitaxy Methods 0.000 description 1
• 230000003071 parasitic effect Effects 0.000 description 1
• 238000007493 shaping process Methods 0.000 description 1
• 230000005533 two-dimensional electron gas Effects 0.000 description 1