JPH0358546B2 - - Google Patents

Info

Publication number
JPH0358546B2
JPH0358546B2 JP59021811A JP2181184A JPH0358546B2 JP H0358546 B2 JPH0358546 B2 JP H0358546B2 JP 59021811 A JP59021811 A JP 59021811A JP 2181184 A JP2181184 A JP 2181184A JP H0358546 B2 JPH0358546 B2 JP H0358546B2
Authority
JP
Japan
Prior art keywords
input
gate
capacitance
transistor
input internal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59021811A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60167443A (ja
Inventor
Hiromasa Kato
Mitsuo Usami
Shuichi Ishii
Katsuji Horiguchi
Masao Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP59021811A priority Critical patent/JPS60167443A/ja
Publication of JPS60167443A publication Critical patent/JPS60167443A/ja
Publication of JPH0358546B2 publication Critical patent/JPH0358546B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP59021811A 1984-02-10 1984-02-10 容量付加半導体装置 Granted JPS60167443A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59021811A JPS60167443A (ja) 1984-02-10 1984-02-10 容量付加半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59021811A JPS60167443A (ja) 1984-02-10 1984-02-10 容量付加半導体装置

Publications (2)

Publication Number Publication Date
JPS60167443A JPS60167443A (ja) 1985-08-30
JPH0358546B2 true JPH0358546B2 (enrdf_load_stackoverflow) 1991-09-05

Family

ID=12065437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59021811A Granted JPS60167443A (ja) 1984-02-10 1984-02-10 容量付加半導体装置

Country Status (1)

Country Link
JP (1) JPS60167443A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS60167443A (ja) 1985-08-30

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