JPH0354850B2 - - Google Patents

Info

Publication number
JPH0354850B2
JPH0354850B2 JP17668084A JP17668084A JPH0354850B2 JP H0354850 B2 JPH0354850 B2 JP H0354850B2 JP 17668084 A JP17668084 A JP 17668084A JP 17668084 A JP17668084 A JP 17668084A JP H0354850 B2 JPH0354850 B2 JP H0354850B2
Authority
JP
Japan
Prior art keywords
pressure
vacuum container
discharge
processing
predetermined
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP17668084A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6154627A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP17668084A priority Critical patent/JPS6154627A/ja
Publication of JPS6154627A publication Critical patent/JPS6154627A/ja
Publication of JPH0354850B2 publication Critical patent/JPH0354850B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP17668084A 1984-08-27 1984-08-27 プラズマ処理方法 Granted JPS6154627A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17668084A JPS6154627A (ja) 1984-08-27 1984-08-27 プラズマ処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17668084A JPS6154627A (ja) 1984-08-27 1984-08-27 プラズマ処理方法

Publications (2)

Publication Number Publication Date
JPS6154627A JPS6154627A (ja) 1986-03-18
JPH0354850B2 true JPH0354850B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-08-21

Family

ID=16017841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17668084A Granted JPS6154627A (ja) 1984-08-27 1984-08-27 プラズマ処理方法

Country Status (1)

Country Link
JP (1) JPS6154627A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0812855B2 (ja) * 1986-09-10 1996-02-07 株式会社日立製作所 エツチング装置の圧力制御方法および装置
WO2011039682A1 (en) * 2009-09-30 2011-04-07 Koninklijke Philips Electronics N.V. Gas concentration arrangement

Also Published As

Publication number Publication date
JPS6154627A (ja) 1986-03-18

Similar Documents

Publication Publication Date Title
US4500563A (en) Independently variably controlled pulsed R.F. plasma chemical vapor processing
US4680474A (en) Method and apparatus for improved ion dose accuracy
JP3814492B2 (ja) プラズマ処理装置およびプラズマ処理方法
TW201926402A (zh) 電漿處理裝置及電漿處理方法
EP1069597A1 (en) Apparatus and method for manufacturing semiconductor device
JPH0354850B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH03223461A (ja) 閉ループ制御反応スパッタリングにより所定成分比の金属化合物層を形成するプロセス及び装置
US4341593A (en) Plasma etching method for aluminum-based films
JPH1068074A (ja) スパッタリング方法及び装置
JP2760331B2 (ja) 真空排気装置
JPH0812855B2 (ja) エツチング装置の圧力制御方法および装置
JPH0476492B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS59133365A (ja) 真空装置
JPH10163308A (ja) プラズマ処理方法および装置
JPH1015378A (ja) 真空処理室の調圧方法
JPH06259144A (ja) 高速圧力制御方法
JPS62154731A (ja) 処理室内圧力調整方法
JP2003007636A (ja) ドーピング量削減方法
JPS6214936B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0457090B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH01125933A (ja) 真空処理方法及び装置
JPS6358833A (ja) ドライエツチング装置におけるエツチング圧力の制御方法
JPH10238956A (ja) 真空炉
JPS6025232A (ja) 半導体製造装置の圧力調整方法
JPS61217572A (ja) 真空装置による処理方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term