JPH0354458B2 - - Google Patents

Info

Publication number
JPH0354458B2
JPH0354458B2 JP58224122A JP22412283A JPH0354458B2 JP H0354458 B2 JPH0354458 B2 JP H0354458B2 JP 58224122 A JP58224122 A JP 58224122A JP 22412283 A JP22412283 A JP 22412283A JP H0354458 B2 JPH0354458 B2 JP H0354458B2
Authority
JP
Japan
Prior art keywords
exhaust pipe
valve
vacuum
vacuum chamber
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58224122A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60117629A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP22412283A priority Critical patent/JPS60117629A/ja
Publication of JPS60117629A publication Critical patent/JPS60117629A/ja
Publication of JPH0354458B2 publication Critical patent/JPH0354458B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP22412283A 1983-11-30 1983-11-30 真空処理装置 Granted JPS60117629A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22412283A JPS60117629A (ja) 1983-11-30 1983-11-30 真空処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22412283A JPS60117629A (ja) 1983-11-30 1983-11-30 真空処理装置

Publications (2)

Publication Number Publication Date
JPS60117629A JPS60117629A (ja) 1985-06-25
JPH0354458B2 true JPH0354458B2 (enrdf_load_stackoverflow) 1991-08-20

Family

ID=16808881

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22412283A Granted JPS60117629A (ja) 1983-11-30 1983-11-30 真空処理装置

Country Status (1)

Country Link
JP (1) JPS60117629A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4739787A (en) * 1986-11-10 1988-04-26 Stoltenberg Kevin J Method and apparatus for improving the yield of integrated circuit devices
JP2686447B2 (ja) * 1988-02-26 1997-12-08 東京エレクトロン株式会社 反応装置
JPH02224231A (ja) * 1988-11-30 1990-09-06 Tokyo Electron Ltd プラズマ処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5516475A (en) * 1978-07-21 1980-02-05 Nec Corp Plasma processing unit
JPS57133633A (en) * 1981-02-13 1982-08-18 Anelva Corp Dry-etching device
JPS59114814A (ja) * 1982-12-21 1984-07-03 Fujitsu Ltd 真空排気方法
JPS6091642A (ja) * 1983-10-25 1985-05-23 Toshiba Corp 半導体製造用真空装置

Also Published As

Publication number Publication date
JPS60117629A (ja) 1985-06-25

Similar Documents

Publication Publication Date Title
JP3501524B2 (ja) 処理装置の真空排気システム
JP3486821B2 (ja) 処理装置及び処理装置内の被処理体の搬送方法
KR100271758B1 (ko) 반도체장치 제조설비 및 이의 구동방법
EP1081380A4 (en) APPARATUS AND METHOD FOR PUMPING
JP4183305B2 (ja) 半導体ウエハ処理装置のための裏面ガス急速放出装置
JPH0354458B2 (enrdf_load_stackoverflow)
JP3020567B2 (ja) 真空処理方法
JP4521889B2 (ja) 基板処理装置
JP3173681B2 (ja) 真空排気装置及びその方法
JPH0124224B2 (enrdf_load_stackoverflow)
JP2826479B2 (ja) ガス供給装置及びその操作方法
JP4582459B2 (ja) 真空装置
JP3347794B2 (ja) 半導体製造装置
JPH02216823A (ja) 処理方法
JPH08111381A (ja) 半導体処理装置
JP2000161215A (ja) 真空排気システムを備えた処理チャンバ
JPS59154025A (ja) 半導体製造装置反応室のリ−ク方法
JPH09306851A (ja) 減圧排気システムおよび減圧気相処理装置
JP3778296B2 (ja) 真空装置
JPS59231816A (ja) ドライエツチング装置
JPH08200221A (ja) 真空集中排気システム
JPH09184482A (ja) 真空排気装置構成
JPH0331U (enrdf_load_stackoverflow)
JPS645093Y2 (enrdf_load_stackoverflow)
JPS6368790A (ja) 真空排気装置