JPH0354443B2 - - Google Patents
Info
- Publication number
- JPH0354443B2 JPH0354443B2 JP6027884A JP6027884A JPH0354443B2 JP H0354443 B2 JPH0354443 B2 JP H0354443B2 JP 6027884 A JP6027884 A JP 6027884A JP 6027884 A JP6027884 A JP 6027884A JP H0354443 B2 JPH0354443 B2 JP H0354443B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- garnet
- baf
- rare earth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 59
- 239000010408 film Substances 0.000 claims description 44
- 239000002223 garnet Substances 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 46
- 229910016036 BaF 2 Inorganic materials 0.000 description 25
- 229910052742 iron Inorganic materials 0.000 description 23
- 229910052761 rare earth metal Inorganic materials 0.000 description 14
- 150000002910 rare earth metals Chemical class 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 230000005415 magnetization Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910052727 yttrium Inorganic materials 0.000 description 8
- 229910052797 bismuth Inorganic materials 0.000 description 7
- 238000006467 substitution reaction Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- MTRJKZUDDJZTLA-UHFFFAOYSA-N iron yttrium Chemical compound [Fe].[Y] MTRJKZUDDJZTLA-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6027884A JPS60202914A (ja) | 1984-03-28 | 1984-03-28 | ガ−ネツト薄膜素子及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6027884A JPS60202914A (ja) | 1984-03-28 | 1984-03-28 | ガ−ネツト薄膜素子及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60202914A JPS60202914A (ja) | 1985-10-14 |
| JPH0354443B2 true JPH0354443B2 (enrdf_load_stackoverflow) | 1991-08-20 |
Family
ID=13137513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6027884A Granted JPS60202914A (ja) | 1984-03-28 | 1984-03-28 | ガ−ネツト薄膜素子及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60202914A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2834123B2 (ja) * | 1987-09-14 | 1998-12-09 | 松下電器産業株式会社 | 光アイソレータ用磁気光学結晶の成長方法 |
-
1984
- 1984-03-28 JP JP6027884A patent/JPS60202914A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60202914A (ja) | 1985-10-14 |
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