JPH0353512Y2 - - Google Patents
Info
- Publication number
- JPH0353512Y2 JPH0353512Y2 JP14389685U JP14389685U JPH0353512Y2 JP H0353512 Y2 JPH0353512 Y2 JP H0353512Y2 JP 14389685 U JP14389685 U JP 14389685U JP 14389685 U JP14389685 U JP 14389685U JP H0353512 Y2 JPH0353512 Y2 JP H0353512Y2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- thin film
- gate
- source
- switching element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 27
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14389685U JPH0353512Y2 (fr) | 1985-09-20 | 1985-09-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14389685U JPH0353512Y2 (fr) | 1985-09-20 | 1985-09-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6252949U JPS6252949U (fr) | 1987-04-02 |
| JPH0353512Y2 true JPH0353512Y2 (fr) | 1991-11-22 |
Family
ID=31054002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14389685U Expired JPH0353512Y2 (fr) | 1985-09-20 | 1985-09-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0353512Y2 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH069214B2 (ja) * | 1984-09-27 | 1994-02-02 | 株式会社東芝 | 薄膜集積回路の製造方法 |
-
1985
- 1985-09-20 JP JP14389685U patent/JPH0353512Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6252949U (fr) | 1987-04-02 |
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