JPH0352435B2 - - Google Patents
Info
- Publication number
- JPH0352435B2 JPH0352435B2 JP11355487A JP11355487A JPH0352435B2 JP H0352435 B2 JPH0352435 B2 JP H0352435B2 JP 11355487 A JP11355487 A JP 11355487A JP 11355487 A JP11355487 A JP 11355487A JP H0352435 B2 JPH0352435 B2 JP H0352435B2
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- beam source
- crucible
- source cell
- mbe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 19
- 238000001451 molecular beam epitaxy Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 15
- 230000007547 defect Effects 0.000 description 12
- 239000013078 crystal Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11355487A JPS63282189A (ja) | 1987-05-12 | 1987-05-12 | 分子線エピタキシャル成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11355487A JPS63282189A (ja) | 1987-05-12 | 1987-05-12 | 分子線エピタキシャル成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63282189A JPS63282189A (ja) | 1988-11-18 |
| JPH0352435B2 true JPH0352435B2 (zh) | 1991-08-09 |
Family
ID=14615235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11355487A Granted JPS63282189A (ja) | 1987-05-12 | 1987-05-12 | 分子線エピタキシャル成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63282189A (zh) |
-
1987
- 1987-05-12 JP JP11355487A patent/JPS63282189A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63282189A (ja) | 1988-11-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |