JPH0352433B2 - - Google Patents
Info
- Publication number
- JPH0352433B2 JPH0352433B2 JP59048251A JP4825184A JPH0352433B2 JP H0352433 B2 JPH0352433 B2 JP H0352433B2 JP 59048251 A JP59048251 A JP 59048251A JP 4825184 A JP4825184 A JP 4825184A JP H0352433 B2 JPH0352433 B2 JP H0352433B2
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- substrate
- diamond
- ions
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59048251A JPS60195094A (ja) | 1984-03-15 | 1984-03-15 | ダイヤモンド薄膜の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59048251A JPS60195094A (ja) | 1984-03-15 | 1984-03-15 | ダイヤモンド薄膜の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60195094A JPS60195094A (ja) | 1985-10-03 |
JPH0352433B2 true JPH0352433B2 (enrdf_load_stackoverflow) | 1991-08-09 |
Family
ID=12798219
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59048251A Granted JPS60195094A (ja) | 1984-03-15 | 1984-03-15 | ダイヤモンド薄膜の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60195094A (enrdf_load_stackoverflow) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5462772A (en) * | 1957-06-27 | 1995-10-31 | Lemelson; Jerome H. | Methods for forming artificial diamond |
US4874596A (en) * | 1957-06-27 | 1989-10-17 | Lemelson Jerome H | Production of crystalline structures |
JPH0679963B2 (ja) * | 1985-03-25 | 1994-10-12 | 並木精密宝石株式会社 | ダイヤモンドライクカ−ボンの製造方法 |
JP2512898B2 (ja) * | 1986-04-28 | 1996-07-03 | 日新電機株式会社 | 絶縁基体とその製造方法 |
JPS62256794A (ja) * | 1986-04-28 | 1987-11-09 | Nissin Electric Co Ltd | ダイヤモンド薄膜の作製方法 |
US5275798A (en) * | 1986-07-11 | 1994-01-04 | Kyocera Corporation | Method for producing diamond films |
US5225275A (en) * | 1986-07-11 | 1993-07-06 | Kyocera Corporation | Method of producing diamond films |
US5270029A (en) * | 1987-02-24 | 1993-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Carbon substance and its manufacturing method |
JP2535886B2 (ja) * | 1987-03-11 | 1996-09-18 | 日新電機株式会社 | 炭素系膜の被覆方法 |
US4882138A (en) * | 1987-03-30 | 1989-11-21 | Crystallume | Method for preparation of diamond ceramics |
US5075095A (en) * | 1987-03-30 | 1991-12-24 | Crystallume | Method for preparation of diamond ceramics |
US5096352A (en) * | 1987-03-31 | 1992-03-17 | Lemelson Jerome H | Diamond coated fasteners |
US5332348A (en) * | 1987-03-31 | 1994-07-26 | Lemelson Jerome H | Fastening devices |
US5067826A (en) * | 1987-03-31 | 1991-11-26 | Lemelson Jerome H | Ball and roller bearings and bearing components |
US6083570A (en) * | 1987-03-31 | 2000-07-04 | Lemelson; Jerome H. | Synthetic diamond coatings with intermediate amorphous metal bonding layers and methods of applying such coatings |
US5190824A (en) | 1988-03-07 | 1993-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating |
US6224952B1 (en) | 1988-03-07 | 2001-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating and method for forming the same |
JPH01294599A (ja) * | 1988-05-20 | 1989-11-28 | Honda Motor Co Ltd | ダイヤモンドの合成法 |
WO1992001827A1 (en) * | 1988-06-03 | 1992-02-06 | Massachusetts Institute Of Technology | Oriented diamond crystals |
IL93399A (en) * | 1989-02-16 | 1994-06-24 | De Beers Ind Diamond | Epithelium of a diamond or a layer of diamond figures |
US5334453A (en) * | 1989-12-28 | 1994-08-02 | Ngk Spark Plug Company Limited | Diamond-coated bodies and process for preparation thereof |
US5794801A (en) * | 1993-08-16 | 1998-08-18 | Lemelson; Jerome | Material compositions |
US5688557A (en) * | 1995-06-07 | 1997-11-18 | Lemelson; Jerome H. | Method of depositing synthetic diamond coatings with intermediates bonding layers |
US5714202A (en) * | 1995-06-07 | 1998-02-03 | Lemelson; Jerome H. | Synthetic diamond overlays for gas turbine engine parts having thermal barrier coatings |
US5616372A (en) * | 1995-06-07 | 1997-04-01 | Syndia Corporation | Method of applying a wear-resistant diamond coating to a substrate |
US5871805A (en) * | 1996-04-08 | 1999-02-16 | Lemelson; Jerome | Computer controlled vapor deposition processes |
US8555921B2 (en) | 2002-12-18 | 2013-10-15 | Vapor Technologies Inc. | Faucet component with coating |
US6904935B2 (en) | 2002-12-18 | 2005-06-14 | Masco Corporation Of Indiana | Valve component with multiple surface layers |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5825041B2 (ja) * | 1979-08-03 | 1983-05-25 | 日本電信電話株式会社 | ダイヤモンド状炭素膜の製造方法 |
JPS5761644A (en) * | 1980-10-02 | 1982-04-14 | Seiko Epson Corp | Cover glass having diamond coating layer and its preparation |
JPS5855319A (ja) * | 1981-09-30 | 1983-04-01 | Nippon Telegr & Teleph Corp <Ntt> | ダイヤモンド状炭素膜の作成方法 |
-
1984
- 1984-03-15 JP JP59048251A patent/JPS60195094A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60195094A (ja) | 1985-10-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0352433B2 (enrdf_load_stackoverflow) | ||
US4657774A (en) | Method for thin film formation | |
EP0474369B1 (en) | Diamond-like carbon coatings | |
EP0583736A1 (en) | Plasma-enhanced magnetron-sputtered deposition of materials | |
Haberland et al. | Energetic cluster impact (ECI): A new method for thin-film formation. | |
WO1988010321A1 (en) | Process for the deposition of diamond films | |
Ding et al. | Low-temperature deposition of nanocrystalline Al2O3 films by ion source-assisted magnetron sputtering | |
US20050136656A1 (en) | Process for depositing composite coating on a surface | |
JP2005305632A (ja) | 精密表面処理のための研磨材およびその製造方法 | |
Lu et al. | Microstructure and nanomechanical properties of nitrogenated amorphous carbon thin films synthesized by reactive radio frequency sputtering | |
Kubart et al. | High power impulse magnetron sputtering of diamond-like carbon coatings | |
JPH0351787B2 (enrdf_load_stackoverflow) | ||
JPH0259862B2 (enrdf_load_stackoverflow) | ||
JP3649873B2 (ja) | Cvd法による薄膜形成方法および薄膜ならびに摺動部品 | |
Oskomov et al. | Hard carbon coatings deposited by pulsed high current magnetron sputtering | |
JPS6134173A (ja) | 高硬度窒化ホウ素膜の製造方法 | |
JPH04337064A (ja) | 窒化硼素被覆部材 | |
Hahn et al. | Plasma conditions for the deposition of TiN by biased activated reactive evaporation and dependence of the resistivity on preferred orientation | |
JPS5855319A (ja) | ダイヤモンド状炭素膜の作成方法 | |
JP2535886B2 (ja) | 炭素系膜の被覆方法 | |
JP2003013200A (ja) | 硬質炭素膜およびその製造方法 | |
JPH0259863B2 (enrdf_load_stackoverflow) | ||
JP2840335B2 (ja) | 高機能性被膜の形成方法 | |
Liu et al. | Growth processes and surface properties of diamondlike carbon films | |
JPS61227163A (ja) | 高硬度窒化ホウ素膜の製法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |