JPH0352433B2 - - Google Patents
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- Publication number
- JPH0352433B2 JPH0352433B2 JP59048251A JP4825184A JPH0352433B2 JP H0352433 B2 JPH0352433 B2 JP H0352433B2 JP 59048251 A JP59048251 A JP 59048251A JP 4825184 A JP4825184 A JP 4825184A JP H0352433 B2 JPH0352433 B2 JP H0352433B2
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- substrate
- diamond
- ions
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 150000002500 ions Chemical class 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 49
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 37
- 229910052799 carbon Inorganic materials 0.000 claims description 34
- 239000010409 thin film Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 30
- 229910003460 diamond Inorganic materials 0.000 claims description 28
- 239000010432 diamond Substances 0.000 claims description 28
- 230000008020 evaporation Effects 0.000 claims description 17
- 238000001704 evaporation Methods 0.000 claims description 17
- -1 hydrogen ions Chemical class 0.000 claims description 17
- 230000001133 acceleration Effects 0.000 claims description 10
- 125000004429 atom Chemical group 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000004215 Carbon black (E152) Substances 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 229930195733 hydrocarbon Natural products 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 10
- 238000007740 vapor deposition Methods 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910009043 WC-Co Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Description
〔発明の技術分野〕
本発明は基体の表面をダイヤモンド薄膜で被覆
する方法に関し、更に詳しくは、イオン照射法と
蒸着法を組合わせることによつて、基体との付着
力が大きいダイヤモンド薄膜を基体の表面に形成
する方法に関する。
〔発明の技術的背景とその問題点〕
ダイヤモンドはその硬度が高く、電気絶縁体で
あり、しかもその熱伝導率は大きく耐摩耗性に優
れるという特異な特性を備えている。そのため、
ダイヤモンドは砥石の砥粒としてそのまま用いら
れたり又は焼結して各種の切削工具、耐摩耗工具
として用いられている。各種の基体の表面をダイ
ヤモンドの薄膜で被覆することができれば、この
ような材料ではダイヤモンドの有用な特性が生か
されて、その用途は飛躍的に拡大できる。例え
ば、ヒートシンク、半導体素材のような各種機能
材料の分野である。
そのため、基体上へのダイヤモンド薄膜の形成
に関しては、従来から、化学蒸着法、アーク放電
とスパツタリングとを組合わせたイオンビーム
法、グロー放電を利用した化学蒸着法又はマイク
ロ波、高周波による励起を利用した化学蒸着法な
ど種々の方法が試みられている。
しかしながら、これまで試みられている方法で
は、基体上に形成された薄膜はそのほとんどが黒
鉛、ダイヤモンド状炭素、非晶質炭素などであつ
て、たとえ真のダイヤモンド薄膜が形成されたと
しても、それは基体との付着力が小さく、例え
ば、基体との熱膨張差に起因する両相間の熱応力
の発生によつてダイヤモンド薄膜が損壊・剥離す
るなどの現象が起り、とうてい実用に供しうる状
態ではなかつた。
〔発明の目的〕
本発明は基体の表面に、該基体との付着力が大
きく、高密度、高硬度のダイヤモンド状カーボン
および／またはダイヤモンド薄膜を形成する方法
の提供を目的とする。
〔発明の概要〕
本発明者らは、上記した目的を達成すべく鋭意
研究を重ねた結果、蒸着法とイオン照射法とを組
合せた方法を適用し、しかもそのときに、蒸発源
から基体上に蒸着させた原子の数と照射するイオ
ンの電荷の数（つまりは照射されるイオンの電荷
の総数）、並びにイオン種のイオン加速エネルギ
ーを適宜に調整すれば、基体の表面に高密度、高
硬度で、かつ付着強度の高いダイヤモンド状カー
ボンおよび／またはダイヤモンドの薄膜を形成す
ることができるという事実を見出し本発明を完成
するに到つた。
すなわち、本発明方法は、基体上に、炭素を含
有する蒸発源から炭素を蒸着させその蒸着と同時
又は交互に加速されたイオン種を照射して、該基
体上にダイヤモンド状カーボンおよび／またはダ
イヤモンドからなる薄膜を形成する方法におい
て、前記基体上に蒸着された炭素原子の数と加速
された前記イオン種の電荷の数との比が0.1〜５
であり、かつ、該イオン種のイオン加速エネルギ
ーが原子当たり６〜60KeVの条件下で該薄膜を
形成することを特徴とする。
本発明方法にあつて、まず基体としては、セラ
ミツクス、超硬合金、サーメツト又は各種の金属
若しくは合金など何であつてもよく、その材質は
問わない。ただし、基体が電気絶縁体の場合に
は、荷電している場所と荷電していない場所とで
はそこに形成された蒸着膜の特性が異なり膜全体
の特性のバラツキが生じ易すくなるので、基体と
しては電気伝導体であることが好ましい。しか
し、基体が電気絶縁性の材料であつても、予め常
法により基体の表面に電気伝導体の薄膜を形成す
るか、又は、後述する本発明の方法において、ま
ず蒸着法により表面導通を可能にする蒸着膜を最
低限形成しておき、その後本発明方法を適用して
もよい。
炭素を含有する蒸発源としては、無定形炭素、
黒鉛、ダイヤモンドの１種又は２種以上のものが
あげられる。
イオン種としては、所定のイオン加速エネルギ
ーを有するイオン種であつて、炭素を含有する蒸
発源に作用してダイヤモンドの薄膜を形成するも
のであればよい。具体的には、水素原子イオン
（H+）、水素分子イオン（H2 +）；メタンイオン
（CH4 +）、エタンイオン（C2H6 +）、ブタンイオン
（C4H10 +）、アセチレンイオン（C2H2 +）のよう
な炭化水素イオン；炭素イオン（C+）；窒素原子
イオン（N+）、窒素分子イオン（N2 +）；ヘリウ
ムイオン（He+）、アルゴンイオン（Ar+）、クリ
プトン（Kr+）のような不活性ガスイオンのいず
れか１種であることが好ましい。
このようなイオン種は、後述する装置によつて
創生され、質量分析用のマグネトロンを用いて磁
気的に選択されて供給される。
本発明方法では、基体の上に炭素を含有する蒸
発源を蒸着させると同時に又は炭素を含有する蒸
発源の蒸着膜が形成された後に、上記したイオン
種を照射する。前者の場合には、炭素を含有する
蒸発源は基体表面に蒸着すると、まさにそれと同
時に照射されたイオン種の作用を受けてそれはダ
イヤモンド状カーボンおよび／またはダイヤモン
ドになりそれがそのまま層形成されることにな
る。また、後者の場合には、既に蒸着層として存
在する、炭素を含有する蒸発源の層がそのあとか
ら照射されたイオン種の作用によりダイヤモンド
状カーボンおよび／またはダイヤモンドに変換さ
れる。したがつて、この後者の場合、炭素を含有
する蒸発源の蒸着層の形成とイオン照射を交互に
反復して行なえば順次ダイヤモンド状カーボンお
よび／またはダイヤモンド層が厚く成長していく
ことになる。
本発明方法にあつては、基体の表面において、
蒸発源から蒸着させた原子の数（n0とする）と照
射されるイオンの電荷の数（すなわち、イオンの
電荷の総数q0とする）との比（n0／q0）が0.1〜
５となるように制御すること、並びにイオン種の
イオン加速エネルギーを該イオン種を構成する原
子り６〜60KeVに制御することが望ましい。
n0／q0が５を超える場合には、基体表面に形成
された薄膜は高硬度なダイヤモンド状カーボンお
よび／またはダイヤモンドでなく低密度、低硬度
の非ダイヤモンドカーボン又はダイヤモンド状カ
ーボンの薄膜になる。逆に0.1未満の場合は、エ
ネルギーが大き過ぎて格子欠陥が多く生じ、低密
度、低硬度の薄膜になる。このためにn0／q0は
0.1〜５と定めたが高硬度、高密度及び基体との
付着強度に優れた良質な薄膜の形成にはn0／q0は
１〜３であることがとくに好ましい。
イオン種のイオン加速エネルギーが原子当り
6KeV未満の場合には、蒸着膜へのイオン種の注
入量が減少してスパツタ現象が支配的となる。こ
の値を原子当り6KeV以上に制御するとスパツタ
現象は抑制され、蒸着膜の原子は該照射イオン種
と衝突して反跳し基体の内部にまで侵入してそこ
で基体と蒸着膜原子との間に新しい層を形成す
る、いわゆるイオンミキシング（Ion mixing）
効果が高まつて基体表面とダイヤモンド薄膜との
付着力が向上する。しかし、その値が原子当り
60keVを超えると基体表面の蒸着膜よりも可成り
深くイオン種が注入されるのでイオンミキシング
効果は高まるが、しかし形成される薄膜は低密
度、低硬度となるために不都合である。
本発明方法は、図に例示した装置を用いて次の
ように行なわれる。
まず、イオン化されるべきガス例えばN2はリ
ークバルブ１を経てイオン源２に導入され、ここ
でイオン化されたのち、加速器３で加速されて所
定のイオン加速エネルギーが付与される。イオン
は次に分析マグネツト４に導入され、ここで必要
とするイオン種のみが磁気的に選択されて反応室
５に供給される。
反応室５は真空ポンプ（例えばターボ分子ポン
プ）６によつて10-4Torr以下の高真空に維持さ
れる。基体７は基体ホルダ８に固定され、ここに
上記したイオン種が照射される。照射に際して
は、基体に均一にイオン種を照射するために、収
束レンズ９にイオン種を通過させる。
１０は、基体７の下に配置された蒸着装置であ
る。装置の加熱方法は、電子ビーム加熱、レーザ
線加熱など適宜な方法が用いられる。この中には
炭素を含有する蒸発源が収容されている。炭素を
含有する蒸発源の蒸着量及び蒸着速度は、基体ホ
ルダ８の横に配設した例えば石英板使用の振動型
膜厚計１１によつて測定すればよい。
また、イオン種の電荷の数、すなわち、イオン
電流は、二次電子追返し電極１２を付設した電流
積算計１３によつて正確に測定することができ
る。
このような装置において、基体７を所定位置に
セツトし、反応室５内を所定の真空度に保ち、蒸
着装置１０を作動して炭素を含有する蒸発源を基
体７に所定量蒸着させ、そこに所定のイオン種を
所定のイオン加速エネルギーで照射すれば、基体
表面にはダイヤモンド状カーボンおよび／または
ダイヤモンドの薄膜が形成される。
なお、このとき炭素を含有する蒸発源、イオン
種はいずれも基体の１方向からのみ蒸着又は照射
されるので、基体の全表面にダイヤモンド状カー
ボンおよび／またはダイヤモンド薄膜を形成する
場合にはこの基体に回転、揺動などの運動を与え
ればよい。
〔発明の実施例〕
実施例 １〜３
図に示した装置を用いて高純度N2ガスをリー
クバルブ１からPIG型イオン源２に導入した。発
生したイオンに加速器３で種々の加速エネルギー
を付与した。このイオンビームを分析マグネツト
４で質量分析しN2 +のみを磁気的に選択した。
他方、基体としてタンタル板を用い、これを基
体ホルダ８にセツトし反応室５内を650／secの
ターボ分子ポンプで１×10-5Torrの真空度に保
持した。
ついで、黒鉛を収容する電子ビーム蒸着装置１
０を作動して炭素を蒸発させ、N2 +イオンの照射
と同時にタンタル板７の上に蒸着させた。
炭素の蒸着量、蒸着速度は振動型膜厚計１１で
測定し、N2 +イオンの個数は電流積算計１３で測
定し、n0／q0を算出した。
N2 +イオンのイオン加速エネルギーを変え、炭
素蒸着量を変化させて薄膜形成を行なつた。その
結果を一括して第１表に示した。
次いで、ロツクウエル硬度計にて、ロツクウエ
ル硬さ測定用のダイヤモンド圧子（荷重60Kg）を
用いて、第１表に示した実施例１〜３ならびに比
較例１〜４のそれぞれの試料の薄膜面上から圧痕
を付けて、そのときの圧痕周辺に生じる薄膜の剥
離した面積を測定して第１表に併記した。
[Technical Field of the Invention] The present invention relates to a method for coating the surface of a substrate with a diamond thin film, and more specifically, the present invention relates to a method for coating the surface of a substrate with a diamond thin film, and more specifically, a method for coating a substrate with a diamond thin film that has a strong adhesion to the substrate by combining an ion irradiation method and a vapor deposition method. It relates to a method of forming on the surface of. [Technical background of the invention and its problems] Diamond has unique properties such as high hardness, being an electrical insulator, high thermal conductivity, and excellent wear resistance. Therefore,
Diamond is used as it is as abrasive grains for grinding wheels, or is sintered and used as various cutting tools and wear-resistant tools. If the surfaces of various substrates could be coated with a thin film of diamond, the useful properties of diamond could be utilized in such materials, and their uses could be expanded dramatically. For example, in the field of various functional materials such as heat sinks and semiconductor materials. Therefore, conventional techniques for forming a diamond thin film on a substrate include chemical vapor deposition, an ion beam method that combines arc discharge and sputtering, a chemical vapor deposition method that uses glow discharge, or excitation using microwaves or high frequencies. Various methods have been tried, including chemical vapor deposition. However, in the methods tried so far, the thin film formed on the substrate is mostly graphite, diamond-like carbon, amorphous carbon, etc., and even if a true diamond thin film is formed, it is The adhesion force with the substrate is small, and phenomena such as damage and peeling of the diamond thin film occur due to generation of thermal stress between the two phases due to the difference in thermal expansion with the substrate. Ta. [Object of the Invention] The object of the present invention is to provide a method for forming a diamond-like carbon and/or diamond thin film on the surface of a substrate, which has a strong adhesion to the substrate, and has high density and high hardness. [Summary of the Invention] As a result of extensive research to achieve the above-mentioned object, the present inventors have applied a method that combines a vapor deposition method and an ion irradiation method. By appropriately adjusting the number of atoms deposited on the substrate, the number of ion charges to be irradiated (in other words, the total number of ion charges to be irradiated), and the ion acceleration energy of the ion species, high density and high The present invention was completed based on the discovery that it is possible to form a thin film of diamond-like carbon and/or diamond that is hard and has high adhesion strength. That is, the method of the present invention deposits carbon from a carbon-containing evaporation source onto a substrate and irradiates accelerated ion species simultaneously or alternately with the vapor deposition to deposit diamond-like carbon and/or diamond onto the substrate. A method for forming a thin film comprising: a ratio of the number of carbon atoms deposited on the substrate to the number of charges of the accelerated ionic species of 0.1 to 5;
and the thin film is formed under conditions where the ion acceleration energy of the ion species is 6 to 60 KeV per atom. In the method of the present invention, the substrate may be made of any material, such as ceramics, cemented carbide, cermets, or various metals or alloys, and its material does not matter. However, if the substrate is an electrical insulator, the characteristics of the deposited film will differ between charged and uncharged areas, and variations in the properties of the entire film are likely to occur. Preferably, it is an electrical conductor. However, even if the substrate is made of an electrically insulating material, it is possible to first form a thin film of an electrical conductor on the surface of the substrate by a conventional method, or to first make the surface conductive by vapor deposition in the method of the present invention, which will be described later. The method of the present invention may be applied after forming a minimum amount of a vapor-deposited film. Evaporation sources containing carbon include amorphous carbon,
Examples include one or more of graphite and diamond. The ion species may be any ion species as long as it has a predetermined ion acceleration energy and acts on the carbon-containing evaporation source to form a diamond thin film. Specifically, hydrogen atom ions (H + ), hydrogen molecular ions (H 2 + ); methane ions (CH 4 + ), ethane ions (C 2 H 6 + ), butane ions (C 4 H 10 + ), Hydrocarbon ions such as acetylene ions (C 2 H 2 + ); carbon ions (C + ); nitrogen atomic ions (N + ), nitrogen molecular ions (N 2 + ); helium ions (He + ), argon ions ( It is preferable to use one of inert gas ions such as Ar + ) and krypton (Kr + ). Such ion species are created by an apparatus to be described later, and are magnetically selected and supplied using a magnetron for mass spectrometry. In the method of the present invention, the above-mentioned ion species are irradiated on the substrate at the same time as the carbon-containing evaporation source is deposited on the substrate or after the carbon-containing evaporation source is deposited. In the former case, when the carbon-containing evaporation source is deposited on the surface of the substrate, it becomes diamond-like carbon and/or diamond under the action of the irradiated ionic species at the same time, and forms a layer as it is. become. In the latter case, the carbon-containing evaporation source layer, already present as a deposited layer, is converted into diamond-like carbon and/or diamond by the action of the irradiated ionic species. Therefore, in the latter case, by alternately repeating the formation of a deposited layer of a carbon-containing evaporation source and ion irradiation, the diamond-like carbon and/or diamond layer will grow thicker. In the method of the present invention, on the surface of the substrate,
The ratio (n 0 /q 0 ) of the number of atoms deposited from the evaporation source (denoted as n 0 ) and the number of ion charges irradiated (i.e., the total number of ion charges q 0 ) is 0.1 to
It is desirable to control the ion acceleration energy of the ion species to 6 to 60 KeV for the atoms constituting the ion species. When n 0 /q 0 exceeds 5, the thin film formed on the substrate surface will be a thin film of low density, low hardness non-diamond carbon or diamond-like carbon instead of high hardness diamond-like carbon and/or diamond. . Conversely, if it is less than 0.1, the energy is too large and many lattice defects occur, resulting in a thin film with low density and low hardness. For this reason, n 0 /q 0 is
Although n 0 /q 0 is determined to be 0.1 to 5, it is particularly preferable that n 0 /q 0 is 1 to 3 in order to form a high-quality thin film with high hardness, high density, and excellent adhesion strength to the substrate. Ion acceleration energy of ionic species per atom
When the voltage is less than 6 KeV, the amount of ion species implanted into the deposited film decreases, and the spatter phenomenon becomes dominant. When this value is controlled to 6 KeV per atom or more, the spatter phenomenon is suppressed, and the atoms of the deposited film collide with the irradiated ion species, recoil, and penetrate into the interior of the substrate, where there is a gap between the substrate and the atoms of the deposited film. So-called ion mixing to form new layers
The effect is enhanced and the adhesion between the substrate surface and the diamond thin film is improved. However, the value is per atom
If it exceeds 60 keV, the ion species will be implanted much deeper than the deposited film on the substrate surface, increasing the ion mixing effect, but the formed thin film will have a low density and low hardness, which is disadvantageous. The method of the present invention is carried out as follows using the apparatus illustrated in the figures. First, a gas to be ionized, such as N 2 , is introduced into the ion source 2 via the leak valve 1 and is ionized there, then accelerated by the accelerator 3 and given a predetermined ion acceleration energy. The ions are then introduced into the analysis magnet 4, where only the desired ion species are magnetically selected and supplied to the reaction chamber 5. The reaction chamber 5 is maintained at a high vacuum of 10 -4 Torr or less by a vacuum pump (for example, a turbomolecular pump) 6. The substrate 7 is fixed to a substrate holder 8, and is irradiated with the above-mentioned ion species. During irradiation, the ion species are passed through a converging lens 9 in order to uniformly irradiate the substrate with the ion species. 10 is a vapor deposition device placed under the base 7. As a heating method for the device, an appropriate method such as electron beam heating or laser beam heating is used. This contains a carbon-containing evaporation source. The amount and rate of evaporation of the carbon-containing evaporation source may be measured by a vibrating film thickness meter 11 using, for example, a quartz plate, which is disposed next to the substrate holder 8. Further, the number of charges of the ion species, that is, the ion current can be accurately measured by the current integrator 13 equipped with the secondary electron repulsion electrode 12. In such an apparatus, the substrate 7 is set at a predetermined position, the interior of the reaction chamber 5 is maintained at a predetermined degree of vacuum, and the vapor deposition device 10 is operated to deposit a predetermined amount of an evaporation source containing carbon onto the substrate 7. When a predetermined ion species is irradiated with a predetermined ion acceleration energy, a thin film of diamond-like carbon and/or diamond is formed on the substrate surface. At this time, both the carbon-containing evaporation source and the ion species are evaporated or irradiated from only one direction of the substrate, so when forming a diamond-like carbon and/or diamond thin film on the entire surface of the substrate, It is sufficient to apply motion such as rotation or oscillation to. [Embodiments of the Invention] Examples 1 to 3 High purity N 2 gas was introduced into the PIG type ion source 2 through the leak valve 1 using the apparatus shown in the figure. Various acceleration energies were applied to the generated ions using an accelerator 3. This ion beam was subjected to mass analysis using an analysis magnet 4, and only N 2 + was magnetically selected. On the other hand, a tantalum plate was used as the substrate, which was set in the substrate holder 8, and the inside of the reaction chamber 5 was maintained at a vacuum of 1×10 -5 Torr by a turbo molecular pump at 650/sec. Next, an electron beam evaporation device 1 containing graphite is provided.
0 was operated to evaporate carbon, and it was deposited on the tantalum plate 7 at the same time as the N 2 + ion irradiation. The amount of carbon evaporated and the evaporation rate were measured with a vibrating film thickness meter 11, and the number of N 2 + ions was measured with a current integrator 13, and n 0 /q 0 was calculated. Thin films were formed by varying the ion acceleration energy of N 2 + ions and varying the amount of carbon deposited. The results are summarized in Table 1. Next, using a Rockwell hardness tester, using a diamond indenter (load 60 kg) for Rockwell hardness measurement, the thin film surface of each of the samples of Examples 1 to 3 and Comparative Examples 1 to 4 shown in Table 1 was measured. An indentation was made, and the peeled area of the thin film generated around the indentation was measured and is also listed in Table 1.
【表】
＊ 剥離なし
実施例 ４〜６
基体としてWC−Co基超硬合金、Si3N4基セラ
ミツクス及びTiC−TiN基サーメツトを使用し
て、実施例１と同様の条件で薄膜形成を行なつ
た。その結果を第２表に示した。
次いで、実施例１〜３と同一の条件で薄膜の剥
離試験を行ない、その結果を第２表に併記した。[Table] * Examples 4 to 6 without peeling Thin films were formed under the same conditions as in Example 1 using WC-Co-based cemented carbide, Si 3 N 4 -based ceramics, and TiC-TiN-based cermet as substrates. Summer. The results are shown in Table 2. Next, a peel test of the thin film was conducted under the same conditions as in Examples 1 to 3, and the results are also listed in Table 2.
【表】
＊ 剥離なし
〔発明の効果〕
本発明方法によれば、第１表、第２表の硬さ
（ヌープ）のデータから明らかなように、基体の
表面にはダイヤモンド状カーボン又はダイヤモン
ドから成る高硬度の薄膜を形成することができる
こと、そしてその薄膜はイオン照射によつて基体
との界面で楔効果を有するので基体との付着力が
大きいことなどの点で工業的に資するところ大で
ある。[Table] * No peeling [Effect of the invention] According to the method of the present invention, as is clear from the hardness (Knoop) data in Tables 1 and 2, the surface of the substrate is free from diamond-like carbon or diamond. It has great industrial advantages in that it can form a thin film with high hardness, and the thin film has a wedge effect at the interface with the substrate by ion irradiation, so it has a strong adhesion to the substrate. be.
図は本発明方法を行なうに当り好適な装置の１
例を示すものである。
１……リークバルブ、２……イオン源、３……
加速器、４……分析マグネツト、５……反応室、
６……真空ポンプ、７……基体、８……基体ホル
ダ、９……イオン収束レンズ、１０……蒸着装
置、１１……石英板使用の振動型膜厚計、１２…
…二次電子追い返し用電極、１３……電流積算
計。
The figure shows one of the preferred apparatuses for carrying out the method of the present invention.
This is an example. 1...Leak valve, 2...Ion source, 3...
Accelerator, 4... Analysis magnet, 5... Reaction chamber,
6... Vacuum pump, 7... Substrate, 8... Substrate holder, 9... Ion focusing lens, 10... Vapor deposition device, 11... Vibrating film thickness gauge using quartz plate, 12...
...Secondary electron repulsion electrode, 13...Current integrator.
Claims (1)
蒸着させ、その蒸着と同時又は交互に加速された
イオン種を照射して、該基体上にダイヤモンド状
カーボン及び／又はダイヤモンドからなる薄膜を
形成する方法において、前記基体上に蒸着された
炭素原子の数と加速された前記イオン種の電荷の
数との比が0.1〜５であり、かつ、該イオン種の
イオン加速エネルギーが原子当たり６〜60KeV
の条件によるイオン注入法を用いて、該薄膜を形
成することを特徴とするダイヤモンド薄膜の制造
方法。 ２ 蒸発源が、無定形炭素、黒鉛、ダイヤモンド
の群から選ばれる少なくとも１種である特許請求
の範囲第１項記の方法。 ３ イオン種が、水素イオン、水素分子イオン、
炭化水素イオン、炭素イオン、窒素イオン、窒素
分子イオン、不活性ガスイオンのいずれか１つで
ある特許請求の範囲第１項又は第２項のいずれか
に記載の方法。[Claims] 1. Carbon is deposited on a substrate from an evaporation source containing carbon, and accelerated ionic species are irradiated simultaneously or alternately with the deposition to form diamond-like carbon and/or carbon on the substrate. In a method for forming a thin film made of diamond, the ratio of the number of carbon atoms deposited on the substrate to the number of charges of the accelerated ionic species is 0.1 to 5, and the ion acceleration of the ionic species is Energy is 6 to 60 KeV per atom
1. A method for producing a diamond thin film, characterized in that the thin film is formed using an ion implantation method under the following conditions. 2. The method according to claim 1, wherein the evaporation source is at least one selected from the group of amorphous carbon, graphite, and diamond. 3 The ion species are hydrogen ions, hydrogen molecular ions,
3. The method according to claim 1, wherein the ion is any one of hydrocarbon ions, carbon ions, nitrogen ions, nitrogen molecular ions, and inert gas ions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59048251A JPS60195094A (en) | 1984-03-15 | 1984-03-15 | Production of diamond thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59048251A JPS60195094A (en) | 1984-03-15 | 1984-03-15 | Production of diamond thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60195094A JPS60195094A (en) | 1985-10-03 |
| JPH0352433B2 true JPH0352433B2 (en) | 1991-08-09 |
Family
ID=12798219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59048251A Granted JPS60195094A (en) | 1984-03-15 | 1984-03-15 | Production of diamond thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60195094A (en) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4874596A (en) * | 1957-06-27 | 1989-10-17 | Lemelson Jerome H | Production of crystalline structures |
| US5462772A (en) * | 1957-06-27 | 1995-10-31 | Lemelson; Jerome H. | Methods for forming artificial diamond |
| JPH0679963B2 (en) * | 1985-03-25 | 1994-10-12 | 並木精密宝石株式会社 | Method for producing diamond-like carbon |
| JP2512898B2 (en) * | 1986-04-28 | 1996-07-03 | 日新電機株式会社 | Insulating substrate and manufacturing method thereof |
| JPS62256794A (en) * | 1986-04-28 | 1987-11-09 | Nissin Electric Co Ltd | Formation of thin diamond film |
| US5275798A (en) * | 1986-07-11 | 1994-01-04 | Kyocera Corporation | Method for producing diamond films |
| US5225275A (en) * | 1986-07-11 | 1993-07-06 | Kyocera Corporation | Method of producing diamond films |
| US5270029A (en) * | 1987-02-24 | 1993-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Carbon substance and its manufacturing method |
| JP2535886B2 (en) * | 1987-03-11 | 1996-09-18 | 日新電機株式会社 | Carbon-based film coating method |
| US4882138A (en) * | 1987-03-30 | 1989-11-21 | Crystallume | Method for preparation of diamond ceramics |
| US5075095A (en) * | 1987-03-30 | 1991-12-24 | Crystallume | Method for preparation of diamond ceramics |
| US5332348A (en) * | 1987-03-31 | 1994-07-26 | Lemelson Jerome H | Fastening devices |
| US6083570A (en) * | 1987-03-31 | 2000-07-04 | Lemelson; Jerome H. | Synthetic diamond coatings with intermediate amorphous metal bonding layers and methods of applying such coatings |
| US5096352A (en) * | 1987-03-31 | 1992-03-17 | Lemelson Jerome H | Diamond coated fasteners |
| US5067826A (en) * | 1987-03-31 | 1991-11-26 | Lemelson Jerome H | Ball and roller bearings and bearing components |
| US5190824A (en) | 1988-03-07 | 1993-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating |
| US6224952B1 (en) | 1988-03-07 | 2001-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Electrostatic-erasing abrasion-proof coating and method for forming the same |
| JPH01294599A (en) * | 1988-05-20 | 1989-11-28 | Honda Motor Co Ltd | Synthesis of diamond |
| WO1992001827A1 (en) * | 1988-06-03 | 1992-02-06 | Massachusetts Institute Of Technology | Oriented diamond crystals |
| IL93399A (en) * | 1989-02-16 | 1994-06-24 | De Beers Ind Diamond | Epitaxy of diamond or diamond-like layer |
| US5334453A (en) * | 1989-12-28 | 1994-08-02 | Ngk Spark Plug Company Limited | Diamond-coated bodies and process for preparation thereof |
| US5740941A (en) * | 1993-08-16 | 1998-04-21 | Lemelson; Jerome | Sheet material with coating |
| US5714202A (en) * | 1995-06-07 | 1998-02-03 | Lemelson; Jerome H. | Synthetic diamond overlays for gas turbine engine parts having thermal barrier coatings |
| US5688557A (en) * | 1995-06-07 | 1997-11-18 | Lemelson; Jerome H. | Method of depositing synthetic diamond coatings with intermediates bonding layers |
| US5616372A (en) * | 1995-06-07 | 1997-04-01 | Syndia Corporation | Method of applying a wear-resistant diamond coating to a substrate |
| US5871805A (en) * | 1996-04-08 | 1999-02-16 | Lemelson; Jerome | Computer controlled vapor deposition processes |
| US8555921B2 (en) | 2002-12-18 | 2013-10-15 | Vapor Technologies Inc. | Faucet component with coating |
| US6904935B2 (en) | 2002-12-18 | 2005-06-14 | Masco Corporation Of Indiana | Valve component with multiple surface layers |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5622616A (en) * | 1979-08-03 | 1981-03-03 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of diamondlike carbon film |
| JPS5761644A (en) * | 1980-10-02 | 1982-04-14 | Seiko Epson Corp | Cover glass having diamond coating layer and its preparation |
| JPS5855319A (en) * | 1981-09-30 | 1983-04-01 | Nippon Telegr & Teleph Corp <Ntt> | Formation of diamondlike carbon film |
-
1984
- 1984-03-15 JP JP59048251A patent/JPS60195094A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5622616A (en) * | 1979-08-03 | 1981-03-03 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of diamondlike carbon film |
| JPS5761644A (en) * | 1980-10-02 | 1982-04-14 | Seiko Epson Corp | Cover glass having diamond coating layer and its preparation |
| JPS5855319A (en) * | 1981-09-30 | 1983-04-01 | Nippon Telegr & Teleph Corp <Ntt> | Formation of diamondlike carbon film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60195094A (en) | 1985-10-03 |
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