JPS62256794A - Formation of thin diamond film - Google Patents
Formation of thin diamond filmInfo
- Publication number
- JPS62256794A JPS62256794A JP9888886A JP9888886A JPS62256794A JP S62256794 A JPS62256794 A JP S62256794A JP 9888886 A JP9888886 A JP 9888886A JP 9888886 A JP9888886 A JP 9888886A JP S62256794 A JPS62256794 A JP S62256794A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gas
- thin film
- diamond
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 29
- 239000010432 diamond Substances 0.000 title claims abstract description 29
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000007789 gas Substances 0.000 claims abstract description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 14
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 6
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 6
- 239000001257 hydrogen Substances 0.000 claims abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 4
- 239000011261 inert gas Substances 0.000 claims abstract description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract 2
- 150000002500 ions Chemical class 0.000 claims description 26
- 239000010409 thin film Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 6
- 239000004215 Carbon black (E152) Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 150000002894 organic compounds Chemical class 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical class [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract description 2
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 238000009834 vaporization Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 10
- 230000008020 evaporation Effects 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、真空蒸着とイオン照射との併用によって、
基体上にダイヤモンド薄膜を作製する方法に関する。[Detailed Description of the Invention] [Industrial Field of Application] The present invention uses vacuum evaporation and ion irradiation in combination to
This invention relates to a method for producing a diamond thin film on a substrate.
従来、基体上にダイヤモンド薄膜を作製（合成）する手
段としては、炭化水素、有機化合物系のガスを用いたプ
ラズマＣＶＤ法、光ＣＶＤ法等の化学気相成長法が採ら
れていた。Conventionally, as means for producing (synthesizing) a diamond thin film on a substrate, a chemical vapor deposition method such as a plasma CVD method using a hydrocarbon or organic compound gas or a photoCVD method has been adopted.
ところが、上記のような従来方法には次のような問題が
あった。However, the conventional method as described above has the following problems.
■ 炭化水素、有機化合物系のガスではダイヤモンドの
結晶成長と同時にグラファイトの析出が生じる。■ Hydrocarbon and organic compound gases cause graphite precipitation to occur at the same time as diamond crystal growth.
■ 基体およびガス雰囲気を高温加熱（例えば８００℃
〜１０００℃程度）して処理する必要があるため、基体
として使用できる材質が大幅に限定される。■ Heating the substrate and gas atmosphere at high temperatures (e.g. 800℃)
Since it is necessary to process the substrate at a temperature of 1,000° C. to 1,000° C., the materials that can be used as the substrate are greatly limited.
■ 気相中で生じるイオンの運動エネルギーは高々数十
〜数百ｅＶ程度であるため、基体に到達する際の当該イ
オンのエネルギーは極めて小さく、従ってダイヤモンド
薄膜は基体との密着性が悪く剥離し易い。■ The kinetic energy of ions generated in the gas phase is at most several tens to hundreds of eV, so the energy of the ions when they reach the substrate is extremely small, so the diamond thin film has poor adhesion to the substrate and may peel off. easy.
そこでこの発明は、上記のような問題点を解決したダイ
ヤモンド薄膜の作製方法を提供すること目的とする。Therefore, an object of the present invention is to provide a method for manufacturing a diamond thin film that solves the above-mentioned problems.
この発明のダイヤモンド薄膜の作製方法は、真空中で基
体に対して、炭素の蒸着と、水素、不活性ガス、炭化水
素および有機化合物の少なくとも一種から成るガスとケ
イ素系ガスとの混合ガスをイオン化して得られかつ加速
されたイオンの照射とを行うことによって、当該基体上
にダイヤモンド薄膜を作製することを特徴とする。The method for producing a diamond thin film of the present invention involves vapor deposition of carbon onto a substrate in vacuum, and ionization of a mixed gas of a silicon-based gas and a gas consisting of at least one of hydrogen, an inert gas, a hydrocarbon, and an organic compound. The method is characterized in that a diamond thin film is produced on the substrate by irradiation with ions obtained and accelerated.
基体に炭素蒸着と上記のようなイオン照射とを行うと、
照射イオンは、基体に蒸着されたグラファイト構造の炭
素からダイヤモンド結晶を得るための核形成エネルギー
供給源として作用し、これによって基体上にダイヤモン
ド薄膜が作製される。When the substrate is subjected to carbon vapor deposition and ion irradiation as described above,
The irradiating ions act as a nucleation energy source to obtain diamond crystals from the graphite-structured carbon deposited on the substrate, thereby creating a thin diamond film on the substrate.
第１図は、この発明に係る方法を実施する装置の一例を
示す概略図である。真空容器（図示省略）内に、例えば
ホルダー２に取り付けられて基体（例えば基板）２０が
収納されており、当該基体２０に向けて蒸発源４および
イオン源１０が配置されている。基体２０としては、例
えば金属、セラミックス等の種々のものが採り得る。蒸
発源４は例えば電子ビーム蒸発源であり、蒸発材料とし
て炭素６を有しており、それを加熱蒸気化して基体２０
の表面に蒸着させることができる。イオン源１０は例え
ばパケット型イオン源が好ましく、それによれば供給さ
れたガスＧをイオン化して均一で大面積のイオン１２を
加速して基体２０の表面に向けて照射することができる
ので、一度に大面積の処理が可能になる。尚、１４は基
体２０上に作製される薄膜の膜厚モニタである。FIG. 1 is a schematic diagram showing an example of an apparatus for carrying out the method according to the invention. A base body (for example, a substrate) 20 is housed in a vacuum container (not shown) attached to, for example, a holder 2, and an evaporation source 4 and an ion source 10 are arranged facing the base body 20. The base body 20 may be made of various materials such as metals and ceramics. The evaporation source 4 is, for example, an electron beam evaporation source, and has carbon 6 as an evaporation material, which is heated and vaporized to form the substrate 20.
can be deposited on the surface of The ion source 10 is preferably a packet type ion source, for example, because it can ionize the supplied gas G, accelerate ions 12 over a uniform large area, and irradiate the ions 12 toward the surface of the base 20. It becomes possible to process large areas. Note that 14 is a film thickness monitor for a thin film produced on the base 20.
イオン源１０に供給するガスＧとしては、水素、アルゴ
ン等の不活性ガス、炭化水素および有機化合物の少なく
とも一種から成るガスに、即ちこれらの単一ガスまたは
混合ガスに、例えばモノシラン（ＳｉＨ４）、ジシラン
（ＳｉｚＨａ）等のケイ素系ガスを例えばＯ，１〜１０
％（体積％）程度混入した混合ガスを用いる。The gas G supplied to the ion source 10 is a gas consisting of at least one of hydrogen, an inert gas such as argon, a hydrocarbon, and an organic compound, that is, a single gas or a mixture thereof, such as monosilane (SiH4), Silicon-based gas such as disilane (SizHa), for example, O, 1 to 10
% (volume %) of mixed gas is used.
膜作製に際しては、真空容器内を例えば１０−５〜１０
−’Ｔｏｒｒ程度にまで排気した後、蒸発源４からの炭
素６を基体２０上に蒸着させるのと同時に、またはそれ
と交互に、イオン源１０からのイオン１２を基体２０に
向けて照射する。その際、基体２０に蒸着させる炭素６
と基体２０に照射するイオン１２との粒子比（組成比）
Ｃ／イオンは適当な値を選択して行う。When preparing the film, the inside of the vacuum container must be heated at a temperature of, for example, 10-5 to 10
After evacuation to about -' Torr, ions 12 from the ion source 10 are irradiated toward the substrate 20 simultaneously with or alternately with carbon 6 from the evaporation source 4 being evaporated onto the substrate 20. At that time, carbon 6 to be deposited on the base 20
Particle ratio (composition ratio) of the ions 12 and the ions 12 irradiated to the base 20
An appropriate value is selected for C/ion.
上記の場合、イオン１２は、基体２０上に蒸着されたグ
ラファイト構造の炭素６からダイヤモンド結晶を得るた
めの核形成エネルギー供給源として作用し、これによっ
て例えば第２図に示すように、基体２０の表面にダイヤ
モンド薄膜２４が作製される。しかもその際、照射され
たケイ素はＳＰ３混成軌道しか取らず、グラファイトの
析出を抑制すると共にダイヤモンド形成に有効に作用す
る。In the above case, the ions 12 act as a nucleation energy source for obtaining diamond crystals from graphitic structured carbon 6 deposited on the substrate 20, thereby e.g. A diamond thin film 24 is formed on the surface. Moreover, at that time, the irradiated silicon takes only SP3 hybrid orbits, which suppresses the precipitation of graphite and effectively acts on diamond formation.
尚、上記イオン１２の加速エネルギーは、４０ＫｅＶ程
度以下にするのが好ましい。これは、エネルギーが４０
ＫｅＶ程度を越えると、ダイヤモンド薄膜２４の内部に
ダメージ（欠陥部）を発生させると共に、スパンタリン
グ作用が表れてダイヤモンド薄膜２０の成膜速度が低下
する場合があるからである。Note that the acceleration energy of the ions 12 is preferably about 40 KeV or less. This has an energy of 40
This is because, if it exceeds about KeV, damage (defects) may occur inside the diamond thin film 24, and a sputtering effect may appear, resulting in a decrease in the deposition rate of the diamond thin film 20.
また、炭素６の蒸着とイオン１２の照射を交互に行う場
合は、炭素６の蒸着を先行させるものとし、しかもその
蒸着膜厚は照射イオン１２の飛程（平均射影飛程）程度
とするのが好ましい。そのようにすれば、直前の蒸着膜
だけを不足なくダイヤモンド化することができるからで
ある。必要な膜厚は、膜厚モニタ１４によって測定する
ことができる。In addition, when vapor deposition of carbon 6 and irradiation of ions 12 are performed alternately, the vapor deposition of carbon 6 should be performed first, and the thickness of the vapor deposited film should be about the range (average projected range) of the irradiated ions 12. is preferred. This is because only the immediately preceding vapor deposited film can be completely diamondized. The required film thickness can be measured by the film thickness monitor 14.
また、膜作製時には、基体２０を加熱手段（図示省略）
によって数百度程度まで加熱しても良く、そのようにす
ればダイヤモンド形成の反応を促進することができる。In addition, during film production, the substrate 20 is heated by heating means (not shown).
The diamond-forming reaction can be accelerated by heating the diamond to several hundred degrees Celsius.
上記のような製膜方法の特徴を列挙すれば次のとおりで
ある。The characteristics of the film forming method as described above are listed below.
■ 照射イオン１２中にケイ素を含んでいるため、グラ
ファイトの析出を抑制でき、均質なダイヤモンド薄膜２
４が得られる。■ Since silicon is included in the irradiated ions 12, precipitation of graphite can be suppressed, resulting in a homogeneous diamond thin film 2.
4 is obtained.
■ 低温処理が可能であるため、基体２０として使用で
きる材質の範囲が大幅に広がる。(2) Since low-temperature treatment is possible, the range of materials that can be used as the base 20 is greatly expanded.
■ 加速されたイオン１２を用いるため、例えば第２図
に示すように基体２０とダイヤモンド薄膜２４との界面
付近に両者の構成ｖｙＪ質から成る混合層（ミキシング
層）２２が形成され、これが言わば模のような作用をす
るので、ダイヤモンド薄膜２４は基体２０に対して密着
性が良く剥離しにくい。(2) Since accelerated ions 12 are used, a mixed layer 22 consisting of the structure of the base 20 and the diamond thin film 24 is formed near the interface between the base 20 and the diamond thin film 24, as shown in FIG. As a result, the diamond thin film 24 has good adhesion to the base 20 and is difficult to peel off.
■ 炭素６の蒸着を併用するため、従来方法に比べて短
時間で大きな膜厚が得られ、ダイヤモンド薄膜２４０作
製効率が良い。(2) Since vapor deposition of carbon 6 is also used, a larger film thickness can be obtained in a shorter time than with conventional methods, and the diamond thin film 240 can be produced efficiently.
以上のようにこの発明によれば、低い処理温度で、しか
も均質かつ密着性の良いダイヤモンド薄膜を基体上に効
率良く作製することができる。As described above, according to the present invention, a homogeneous and highly adhesive diamond thin film can be efficiently produced on a substrate at a low processing temperature.
第１図は、この発明に係る方法を実施する装置の一例を
示す概略図である。第２図は、この発明に係る方法によ
ってダイヤモンド薄膜が作製された基体の一例を拡大し
て示す概略断面図である。
４・・・蒸発源、６・・・炭素、１０・・・イオン源、
１２・・・イオン、２０・・・基体、２２・・・混合層
、２４・・・ダイヤモンド薄膜、Ｇ・・・ガス。FIG. 1 is a schematic diagram showing an example of an apparatus for carrying out the method according to the invention. FIG. 2 is a schematic cross-sectional view showing an enlarged example of a substrate on which a diamond thin film is formed by the method according to the present invention. 4... Evaporation source, 6... Carbon, 10... Ion source,
DESCRIPTION OF SYMBOLS 12... Ion, 20... Substrate, 22... Mixed layer, 24... Diamond thin film, G... Gas.
Claims (1)
活性ガス、炭化水素および有機化合物の少なくとも一種
から成るガスとケイ素系ガスとの混合ガスをイオン化し
て得られかつ加速されたイオンの照射とを行うことによ
って、当該基体上にダイヤモンド薄膜を作製することを
特徴とするダイヤモンド薄膜の作製方法。(1) Obtained and accelerated by evaporating carbon onto a substrate in vacuum and ionizing a mixed gas of a silicon-based gas and a gas consisting of at least one of hydrogen, an inert gas, a hydrocarbon, and an organic compound. A method for producing a diamond thin film, the method comprising: producing a diamond thin film on the substrate by irradiating the substrate with ions.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9888886A JPS62256794A (en) | 1986-04-28 | 1986-04-28 | Formation of thin diamond film |
| DE8787106104T DE3775459D1 (en) | 1986-04-28 | 1987-04-28 | METHOD FOR PRODUCING A DIAMOND LAYER. |
| AU72154/87A AU592865B2 (en) | 1986-04-28 | 1987-04-28 | Method of forming diamond film |
| EP87106104A EP0245688B1 (en) | 1986-04-28 | 1987-04-28 | Method of forming diamond film |
| US07/544,800 US5009923A (en) | 1986-04-28 | 1990-06-27 | Method of forming diamond film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9888886A JPS62256794A (en) | 1986-04-28 | 1986-04-28 | Formation of thin diamond film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62256794A true JPS62256794A (en) | 1987-11-09 |
Family
ID=14231676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9888886A Pending JPS62256794A (en) | 1986-04-28 | 1986-04-28 | Formation of thin diamond film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62256794A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60195094A (en) * | 1984-03-15 | 1985-10-03 | Agency Of Ind Science & Technol | Production of diamond thin film |
-
1986
- 1986-04-28 JP JP9888886A patent/JPS62256794A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60195094A (en) * | 1984-03-15 | 1985-10-03 | Agency Of Ind Science & Technol | Production of diamond thin film |
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