JPH01294599A - Synthesis of diamond - Google Patents
Synthesis of diamondInfo
- Publication number
- JPH01294599A JPH01294599A JP12457688A JP12457688A JPH01294599A JP H01294599 A JPH01294599 A JP H01294599A JP 12457688 A JP12457688 A JP 12457688A JP 12457688 A JP12457688 A JP 12457688A JP H01294599 A JPH01294599 A JP H01294599A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- carbon
- density energy
- electrode
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 23
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 20
- 230000015572 biosynthetic process Effects 0.000 title description 7
- 238000003786 synthesis reaction Methods 0.000 title description 6
- 239000000463 material Substances 0.000 claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 10
- 230000001678 irradiating effect Effects 0.000 claims abstract description 3
- 238000001816 cooling Methods 0.000 claims description 7
- 238000001308 synthesis method Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 7
- 239000007789 gas Substances 0.000 abstract description 5
- 229910002804 graphite Inorganic materials 0.000 abstract description 5
- 239000010439 graphite Substances 0.000 abstract description 5
- 239000002994 raw material Substances 0.000 abstract description 5
- 239000000112 cooling gas Substances 0.000 abstract description 4
- 125000004432 carbon atom Chemical group C* 0.000 abstract description 2
- 239000006229 carbon black Substances 0.000 abstract description 2
- 238000010791 quenching Methods 0.000 abstract 2
- 230000000171 quenching effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 13
- 230000005284 excitation Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 sintered graphite Chemical compound 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明はダイヤモンドの合成法に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a method for synthesizing diamond.
（従来の技術）
研磨材等として用いるダイヤモンドの合成法として従来
から高圧法と低圧法が知られている。(Prior Art) High-pressure methods and low-pressure methods have been known as methods for synthesizing diamonds used as abrasives and the like.
高圧法は１５００℃以上且つ６万気圧以上の条件下にお
いて行う方法であり、低圧法は特開昭６２−２３５２９
５号或いは特開昭８３−２０４７９号に開示されるよう
に、炭素を含むガスをプラズマ化するとともに高温に加
熱された基板上で合成する方法である。そして、最近で
は設備等の関係から低圧法が主として利用されている。The high pressure method is a method carried out under conditions of 1,500°C or higher and 60,000 atmospheres or higher, and the low pressure method is based on Japanese Patent Application Laid-Open No. 62-23529.
As disclosed in No. 5 or Japanese Unexamined Patent Publication No. 83-20479, this is a method in which carbon-containing gas is turned into plasma and synthesized on a substrate heated to a high temperature. Recently, the low pressure method has been mainly used due to equipment limitations.
（発明が解決しようとする課題）
上述した低圧法によってダイヤモンドを合成するには、
炭化水素を導入し減圧下でプラズマを発生するための容
器が必要となる。(Problem to be solved by the invention) To synthesize diamond by the above-mentioned low pressure method,
A container is required to introduce hydrocarbons and generate plasma under reduced pressure.
このように容器を用いた閉鎖系の合成装置は装置自体が
複雑になるとともに原料ガスを容器内に多量に導入する
と所定の真空度を保てずプラズマを発生できないので、
原料ガスの導入量も少なくせざるを得す、合成効率を向
上することができない。In a closed-system synthesis apparatus using a container as described above, the apparatus itself becomes complicated, and if a large amount of raw material gas is introduced into the container, a predetermined degree of vacuum cannot be maintained and plasma cannot be generated.
The amount of raw material gas introduced must also be reduced, and the synthesis efficiency cannot be improved.
（課題を解決するための手段）
上記課題を解決すべく本発明は、炭素又は炭素を含む素
材に直流アーク、プラズマアーク或いはレーザビーム等
の高密度エネルギービームを照射して素材の構造をダイ
ヤモンドの構造に転化し、これを急冷することでダイヤ
モンド構造のまま常温に戻すようにした。(Means for Solving the Problems) In order to solve the above problems, the present invention irradiates carbon or a material containing carbon with a high-density energy beam such as a direct current arc, plasma arc, or laser beam to change the structure of the material to that of diamond. By rapidly cooling this, the diamond structure was returned to room temperature.
（作用）
高密度エネルギービームを六方晶で電子配置がｓｐ２構
造の炭素素材に照射して高温状態とすると、素材は立方
晶でＳＰ３構造のダイヤモンドとなり、これを急冷する
ことで開放系で目的とするダイヤモンドが得られる。(Function) When a high-density energy beam is irradiated onto a carbon material with a hexagonal crystal structure and an electron configuration of sp2 to bring it into a high temperature state, the material becomes a diamond with a cubic crystal structure and an SP3 structure.By rapidly cooling this, it can be used as an open system to achieve the intended purpose. You can get diamonds that
（実施例） 以下に本発明の実施例を添付図面に基づいて説明する。(Example) Embodiments of the present invention will be described below based on the accompanying drawings.
第１図は高密度エネルギービームとして直流アークを用
いた合成方法の概略図であり、図中１は素材、２はアー
クを発生する電極、３は冷却ガスの導入バイブであり、
素材１としては焼結黒鉛、未焼結黒鉛、黒鉛粉、カーボ
ンブラックなどの炭素単体の他に、炭素を含有する化合
物を用いるか、これらの素材をペースト状にして基板等
に塗布するか、更には炭素鋼や鋳鉄等のように炭素を含
む金属材料でもよい。Figure 1 is a schematic diagram of a synthesis method using a DC arc as a high-density energy beam, in which 1 is a material, 2 is an electrode that generates an arc, 3 is a cooling gas introduction vibe,
As the material 1, in addition to simple carbon such as sintered graphite, unsintered graphite, graphite powder, and carbon black, compounds containing carbon may be used, or these materials may be made into a paste and applied to the substrate, etc. Furthermore, a metal material containing carbon such as carbon steel or cast iron may be used.
また、電８ｉ２としては一般的な金属電極でもよいが、
黒鉛電極を用いるのが好ましく、冷却ガスとしてはＡｒ
、Ｎ２．Ｃｏ２．Ｈ，、ＮＨｓ又はこれらの混合ガス等
を用いる。In addition, a general metal electrode may be used as the electrode 8i2, but
It is preferable to use graphite electrodes, and the cooling gas is Ar.
, N2. Co2. A gas such as H, NHs or a mixture thereof is used.
以上の直流アークを用いてダイヤモンドを合成するには
、電圧を３０〜２２０Ｖで電流を５０〜３００Ａ例えば
７０ｖで１５ＯＡの条件テアーク径を３ｍｍ程度とし、
電極２を０．１〜１．０ｍ／ｓｅｃの速度で穆動せしめ
、アークによって組材１表面を走査する。To synthesize diamond using the above DC arc, the voltage is 30 to 220V, the current is 50 to 300A, for example, 70V and 15OA, and the diameter of the tear arc is about 3mm.
The electrode 2 is moved at a speed of 0.1 to 1.0 m/sec, and the surface of the assembly 1 is scanned by an arc.
このように直流アークによって組材１表面を走査するこ
とで、素材が高温状態となる。そして素材が高温状態と
なると、炭素原子同士の結合がＳＦ３からＳ２３へと転
化し、これに伴フて結晶構造が六法晶から立方晶へ変化
し、ダイヤモンド構造になる。By scanning the surface of the assembly 1 with the DC arc in this manner, the material becomes hot. When the material reaches a high temperature, the bonds between carbon atoms convert from SF3 to S23, and as a result, the crystal structure changes from hexagonal crystal to cubic crystal, resulting in a diamond structure.
そして、上記の高温状態で安定なダイヤモンド構造は急
冷されることで、ＳＦ３及び立方晶を保ったまま常温に
なり、多結晶ダイヤモンドが得られる。ここで冷却速度
としては１０３℃／ｓｅｃ以上とするのが好ましく、こ
の冷却速度以下であると、グラファイトが多量に生成さ
れる。The diamond structure, which is stable at high temperatures, is then rapidly cooled to room temperature while maintaining the SF3 and cubic crystal structure, yielding polycrystalline diamond. Here, the cooling rate is preferably 103° C./sec or more, and if the cooling rate is less than this, a large amount of graphite will be produced.
第２図は高密度エネルギービームとしてレーザビームを
用いた合成方法を示す概略図であり、ビーム径を３ｍｍ
以下（例えば０．５ｍｍ）とし、０ 、 １〜１ 、０
ｍ／ｓｅｃｍの速度で素材１表面を走査し、同時に急冷
する。尚、レーザビームを用いる場合には、レーザ出力
を１３０〜１７０ｗａｔｔとして、エネルギー密度が１
００〜２００ ｋｃａｌ／ｃｍ２となるようにする。こ
れは１００ ｋｃａｌ、７ｃｍ２未満であるとＳＦ３か
らＳ２３への転化が起こりにくくダイヤモンドの生成が
できず、２００ ｋｃａｌ／ｃｍ”を超えると、素材が
高温になり過ぎ冷却速度が遅くなり、却って転化効率が
低下することによる。Figure 2 is a schematic diagram showing a synthesis method using a laser beam as a high-density energy beam, with a beam diameter of 3 mm.
or less (for example, 0.5 mm), 0, 1 to 1, 0
The surface of the material 1 is scanned at a speed of m/sec and simultaneously rapidly cooled. In addition, when using a laser beam, the laser output is 130 to 170 watts, and the energy density is 1.
00 to 200 kcal/cm2. If this is less than 100 kcal/cm2, the conversion from SF3 to S23 will be difficult to occur, and diamond formation will not be possible.If it exceeds 200 kcal/cm, the material will become too hot and the cooling rate will slow down, which will actually reduce the conversion efficiency. This is due to a decrease in
また、レーザビームを用いる場合には、素材１を負極又
は正極に接続しておくのが好ましい。即ち、炭素原子の
結合をｓｐ’からＳＦ３に転化させるには熱的な励起の
他に、電子的な励起も有効であり、素材１を一方の電極
に接続することで一種のコンデンサーが形成され、レー
ザビームを照射することで静電話導により電子励起が生
じ、その結果、熱的励起との相乗効果によってダイヤモ
ンドの合成効率が大巾に向上する。Moreover, when using a laser beam, it is preferable to connect the material 1 to a negative electrode or a positive electrode. In other words, in addition to thermal excitation, electronic excitation is also effective in converting the carbon atom bond from sp' to SF3, and by connecting material 1 to one electrode, a kind of capacitor is formed. By irradiating the laser beam, electronic excitation occurs due to electrostatic conduction, and as a result, the synergistic effect with thermal excitation greatly improves the efficiency of diamond synthesis.
（発明の効果）
以上に説明した如く本発明方法によれば、常圧且つ開放
系でダイヤモンドの合成を行うため、従来法に比べ気密
なチャンバー（容器）や吸引装置が不要となり装置の簡
略化が達成でき、また本発明方法によれば数μｍから１
ｍｍ厚程度のダイヤモンドまで合成でき、従来法による
合成速度が約１８０μｍ／ｈであるのに対し 程
度の速度で合成でき、飛躍的に合成速度が向上する。(Effects of the Invention) As explained above, according to the method of the present invention, diamond is synthesized under normal pressure and in an open system, which eliminates the need for an airtight chamber (container) or suction device compared to the conventional method, simplifying the equipment. can be achieved, and according to the method of the present invention, from several μm to 1
It is possible to synthesize diamonds up to millimeters thick, and compared to the conventional method's synthesis speed of about 180 μm/h, it can be synthesized at a speed of about 100 μm/h, dramatically improving the synthesis speed.
第１図及び第２図はいずれも本発明方法の概略を示す図
である。
尚、図面中１は素材、２は電極、３は冷却パイプである
。1 and 2 are diagrams schematically showing the method of the present invention. In the drawings, 1 is a material, 2 is an electrode, and 3 is a cooling pipe.
Claims (1)
射することで素材の構造をダイヤモンド構造に転化し、
次いで常温まで急冷するようにしたことを特徴とするダ
イヤモンドの合成法。By irradiating carbon or a material containing carbon with a high-density energy beam, the structure of the material is transformed into a diamond structure.
A diamond synthesis method characterized by rapidly cooling the diamond to room temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12457688A JPH01294599A (en) | 1988-05-20 | 1988-05-20 | Synthesis of diamond |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12457688A JPH01294599A (en) | 1988-05-20 | 1988-05-20 | Synthesis of diamond |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01294599A true JPH01294599A (en) | 1989-11-28 |
Family
ID=14888894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12457688A Pending JPH01294599A (en) | 1988-05-20 | 1988-05-20 | Synthesis of diamond |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01294599A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5973490A (en) * | 1982-10-19 | 1984-04-25 | Matsushita Electric Ind Co Ltd | Preparation of crystal |
| JPS60195094A (en) * | 1984-03-15 | 1985-10-03 | Agency Of Ind Science & Technol | Production of diamond thin film |
| JPS60251199A (en) * | 1984-05-25 | 1985-12-11 | Matsushita Electric Ind Co Ltd | Preparation of diamond single crystal |
-
1988
- 1988-05-20 JP JP12457688A patent/JPH01294599A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5973490A (en) * | 1982-10-19 | 1984-04-25 | Matsushita Electric Ind Co Ltd | Preparation of crystal |
| JPS60195094A (en) * | 1984-03-15 | 1985-10-03 | Agency Of Ind Science & Technol | Production of diamond thin film |
| JPS60251199A (en) * | 1984-05-25 | 1985-12-11 | Matsushita Electric Ind Co Ltd | Preparation of diamond single crystal |
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