JPH03208893A - Method and device for synthesizing diamond film - Google Patents
Method and device for synthesizing diamond filmInfo
- Publication number
- JPH03208893A JPH03208893A JP533990A JP533990A JPH03208893A JP H03208893 A JPH03208893 A JP H03208893A JP 533990 A JP533990 A JP 533990A JP 533990 A JP533990 A JP 533990A JP H03208893 A JPH03208893 A JP H03208893A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- processed
- gas
- laser
- diamond film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 40
- 239000010432 diamond Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims description 12
- 230000002194 synthesizing effect Effects 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 230000015556 catabolic process Effects 0.000 claims abstract description 18
- 150000001722 carbon compounds Chemical class 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000003786 synthesis reaction Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052799 carbon Inorganic materials 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 3
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 34
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
- 238000001308 synthesis method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
被処理基板へのダイヤモンド膜の合成方法と装置に関し
、
不純物を含まない高純度のダイヤモンドを低い基板温度
で合成する方法および装置を提供することを目的とし、
炭素化合物ガスを含む雰囲気中に被処理基板（４）を置
き、大出力の赤外レーザ光（１）をレンズ（２）により
被処理基板（４）の直上に集光し、レーザブレークダウ
ンを起こさせて炭素化合物のガスプラズマを発生せしめ
、前記被処理基板（４ンの上にダイヤモンド膜（５）を
形成することを特徴としてダイヤモンド膜の合成方法を
構成し、また、大出力の赤外レーザ光（１）を集光して
被処理基板（４）の直上でレーザブレークダウンを起こ
させる手段と、被処理基板（４）を垂直方向および水平
方向に移動可能の基板台ＯＩに固定し、レーザブレーク
ダウンの発生位置に調整する手段と、所定量の炭素化合
物ガスＱ２）と雰囲気ガスＱ３１とを被処理基板（４）
が固定されている真空室（９）に供給する手段と、レー
ザブレークダウンの終わったガスを排気する手段とを少
なくとも含んで構成されていることを特徴としてダイヤ
モンド膜の合成装置を構成する。[Detailed Description of the Invention] [Summary] Regarding a method and apparatus for synthesizing a diamond film on a substrate to be processed, the present invention aims to provide a method and apparatus for synthesizing high-purity diamond containing no impurities at a low substrate temperature. A substrate to be processed (4) is placed in an atmosphere containing carbon compound gas, and a high-output infrared laser beam (1) is focused directly above the substrate to be processed (4) using a lens (2) to cause laser breakdown. The diamond film synthesis method is characterized in that a diamond film (5) is formed on the substrate to be processed (4) by generating a carbon compound gas plasma. A means for condensing a laser beam (1) to cause laser breakdown directly above a substrate to be processed (4), and a means for fixing the substrate to be processed (4) to a substrate stand OI that is movable in vertical and horizontal directions. , a means for adjusting the position where laser breakdown occurs, and a predetermined amount of carbon compound gas Q2) and atmospheric gas Q31 to the substrate to be processed (4).
The apparatus for synthesizing a diamond film is characterized in that it includes at least a means for supplying gas to a vacuum chamber (9) in which a gas is fixed, and a means for exhausting gas after laser breakdown.
本発明は低い基板温度で良質のダイヤモンド膜を合成す
る方法と装置に関する。The present invention relates to a method and apparatus for synthesizing high quality diamond films at low substrate temperatures.
ダイヤモンドは炭素（Ｃ）の同素体であり、所謂るダイ
ヤモンド構造を示し、モース（Ｍｏｈｓ）硬度は１０と
大きく、また熱伝導度は２０００Ｗ／ｖａＫと他の材料
に較べて格段に優れており、またバルクを伝播する音速
は１８，０００ ｍ／ｓと他の材料に較べて格段に速い
などの特徴をもっている。Diamond is an allotrope of carbon (C), exhibits a so-called diamond structure, has a high Mohs hardness of 10, and has a thermal conductivity of 2000 W/vaK, which is significantly superior to other materials. The speed of sound propagating through the bulk is 18,000 m/s, which is much faster than other materials.
そのため、この性質を利用して各種の用途が検討されて
いる。Therefore, various uses are being considered using this property.
すなわち、硬度の高いのを利用してドリルの刃やバイト
への使用が検討されているが、ダイヤモンド膜としては
硬度が高いのを利用して耐摩耗性コーティング、熱伝導
度の高いのを利用して半導体素子のヒートシンク（ｌｅ
ａｔ−ｓｉｎｋ）の構成材、また音速が速いことを利用
してスピーカーの振動板などへの実用化が進められてい
る。In other words, diamond film is being considered for use in drill bits and cutting tools due to its high hardness, but diamond film is also being used for wear-resistant coating and high thermal conductivity due to its high hardness. and the heat sink of the semiconductor element (le
At-sink) is being put to practical use in speaker diaphragms, etc., taking advantage of its high speed of sound.
ダイヤモンド膜の合成法としては低圧合成法にはマイク
ロ波プラズマ気相成長法（略してマイクロ波プラズマＣ
ＶＤ法）があり、被処理基板上に微結晶の形で製膜でき
る点に特徴がある。As a diamond film synthesis method, microwave plasma vapor deposition method (abbreviated as microwave plasma C) is a low-pressure synthesis method.
VD method), which is unique in that it can form a film in the form of microcrystals on the substrate to be processed.
然し、気相成長法（ＣＶＤ法）で成長させたダイヤモン
ド膜は製膜速度が０．１〜１Ｏｐ−７時と小さいことが
問題であった。However, a problem with diamond films grown by vapor phase growth (CVD) is that the film forming rate is as low as 0.1 to 1 Op-7.
そこで、発明者等はＤＣプラズマジェットＣｖＤ法を開
発し、新しいダイヤモンドの合成方法を提供している。Therefore, the inventors have developed a DC plasma jet CVD method to provide a new method for synthesizing diamond.
（特願昭６２−０８３３１８．特開平１−３３０９６）
そして、この方法を使用すれば、製膜速度が２００μＩ
Ｉ１時と大きく、然も核発生密度が高いために微細な凹
凸を伴う表面上に均一なダイヤモンド膜を高速に被覆す
ることができる。(Patent application No. 1983-083318. Japanese Patent Application No. 1-33096)
If this method is used, the film forming rate is 200 μI.
Since the nucleation density is as large as I1 and the nucleation density is high, a uniform diamond film can be coated quickly on a surface with fine irregularities.
然し、この方法はＤＣアーク放電を利用するために、僅
かではあるが電極材料が合成されたダイヤモンドの中に
不純物として混入す、ると云う問題がある。However, since this method utilizes DC arc discharge, there is a problem in that the electrode material is mixed into the synthesized diamond as an impurity, albeit in a small amount.
また、従来のＣＶＤ法による場合、被処理基板温度の温
度は少なくとも６００°Ｃ以上になることから、耐熱性
の低い材料には膜形成することができず、また製膜温度
が高いために熱膨張係数の違いが大きく影響し、製膜後
に剥離し易いなどの問題があった。In addition, when using the conventional CVD method, the temperature of the substrate to be processed is at least 600°C or higher, making it impossible to form a film on materials with low heat resistance. Differences in expansion coefficients have a large effect, and there have been problems such as easy peeling after film formation.
ダイヤモンド膜の形成法として先に記したように各種の
方法が提案されているが、何れも高温で行われている。As described above, various methods have been proposed for forming a diamond film, but all of them are performed at high temperatures.
そのため、先に記したようにダイヤモンド膜を被覆する
被処理基板材料が限られ、また製膜後に剥離が生じ易い
ことが問題で、この解決が課題である。Therefore, as described above, there are problems in that the substrate materials to be treated that can be coated with the diamond film are limited, and peeling tends to occur after the film is formed, and the problem is to solve this problem.
上記の課題は、炭素化合物ガスを倉む雰囲気中に被処理
基板を置き、大出力の赤外レーザ光をレンズにより被処
理基板の直上に集光し、レーザブレークダウンを起こさ
せて炭素化合物のガスプラズマを発生せしめ、被処理基
板上にダイヤモンドを膜形成することを特徴としてダイ
ヤモンド膜の合成方法を構成し、また大出力の赤外レー
ザ光を集光して被処理基板の直上でレーザブレークダウ
ンを起こさせる手段と、被処理基板を垂直方向および水
平方向に移動可能の基板台に固定し、レーザブレークダ
ウンの発生位置に調整する手段と、所定量の炭素化合物
と雰囲気ガスとを被処理基板が固定されている真空室に
供給した後にレーザブレークダウンの終わったガスを排
気する手段とを少なくとも含んで構成されていることを
特徴としてダイヤモンド膜の合成装置を構成することに
より解決することができる。To solve the above problem, the substrate to be processed is placed in an atmosphere containing carbon compound gas, and a high-output infrared laser beam is focused directly above the substrate to be processed using a lens, causing laser breakdown and releasing carbon compounds. The diamond film synthesis method is characterized by generating gas plasma and forming a diamond film on the substrate to be processed, and also focuses a high-output infrared laser beam to create a laser break directly above the substrate to be processed. means for fixing the substrate to be processed on a vertically and horizontally movable substrate stand and adjusting it to a position where laser breakdown occurs; The problem can be solved by configuring a diamond film synthesis apparatus characterized by comprising at least a means for exhausting gas after laser breakdown after supplying it to a vacuum chamber to which a substrate is fixed. can.
本発明はレーザブレークダウンに際して生ずるガスプラ
ズマにより高度に活性化した炭素化合物ラジカルが生ず
るのを利用して低温でダイヤモンドを合成するものであ
る。The present invention utilizes the generation of highly activated carbon compound radicals by the gas plasma generated during laser breakdown to synthesize diamond at low temperatures.
こ−で、レーザブレークダウンとは、レーザ光のエネル
ギー密度が膨大な場合は、高い輝度と鋭い音を発して気
体の分子の誘電破壊が生じてプラズマが発生する現象を
云う。Here, laser breakdown refers to a phenomenon in which when the energy density of laser light is enormous, high brightness and sharp sound are emitted, dielectric breakdown of gas molecules occurs, and plasma is generated.
本発明は炭素化合物ガスの雰囲気中で、大出力の赤外レ
ーザ光を短焦点レンズで集光して焦点を結ばせることに
より、炭素化合物ガスのレーザブレークダウンを起こさ
せ、この直下に被処理基板をおくことによりダイヤモン
ド膜を形成するものである。In the present invention, in an atmosphere of carbon compound gas, a high-output infrared laser beam is condensed and focused by a short focal length lens, thereby causing laser breakdown of the carbon compound gas, and directly below the infrared laser beam to be processed. A diamond film is formed by placing a substrate.
なお、大出力を得るにはＱスイッチ・レーザを使用すれ
ばよ＜、５０μｓ程度のパルス幅で数１０ＭＷ程度の出
力は容易に得ることができ、ジャイアント・パルスと呼
ばれている。Note that to obtain a large output, a Q-switched laser can be used. An output of several tens of MW can be easily obtained with a pulse width of about 50 μs, and is called a giant pulse.
第１図は本発明の原理を示すものであり、また第２図は
効率よくダイヤモンド膜を合成する方法の説明図である
。FIG. 1 shows the principle of the present invention, and FIG. 2 is an explanatory diagram of a method for efficiently synthesizing a diamond film.
すなわち、炭酸ガス（ＣＯ□）レーザのように大出力が
出せる赤外レーザ光１を赤外光を透過する材料からなる
レンズ２を用いて集光し、炭素化合物ガスの雰囲気中で
焦点３を結ばせてレーザブレークダウンを起こさせる。That is, an infrared laser beam 1 that can produce high output, such as a carbon dioxide (CO□) laser, is focused using a lens 2 made of a material that transmits infrared light, and a focal point 3 is focused in an atmosphere of carbon compound gas. Tie them together to cause laser breakdown.
そして、この焦点の直下に被処理基板４があると、プラ
ズマの発生により生じた活性度の高い炭素化合物ラジカ
ルが被処理基板４の上で急冷する結果、ダイヤモンドに
変性するものである。If the substrate 4 to be processed is located directly below this focal point, the highly active carbon compound radicals generated by the generation of plasma are rapidly cooled on the substrate 4 to be processed, and as a result are denatured into diamond.
また、第２図は実用的な合成方法であって、従来からダ
イヤモンドのＣＶＤ成長に使用されているガス例えばメ
タン（ＣＨ４）ガスと水素（Ｈ２）の混合ガスを給気口
６より導入してノズル７から噴出させ、その出口にレー
ザの焦点３を結ばせるものである。FIG. 2 shows a practical synthesis method in which a gas conventionally used for diamond CVD growth, such as a mixed gas of methane (CH4) gas and hydrogen (H2), is introduced from the air supply port 6. The laser is ejected from a nozzle 7, and the laser is focused at its exit.
そして、被処理基板４を焦点３の直下に位置決めし、前
後左右に移動させることにより、被処理基板４の全面に
亙ってダイヤモンド膜５を形成することができる。The diamond film 5 can be formed over the entire surface of the substrate 4 by positioning the substrate 4 directly below the focal point 3 and moving it back and forth and left and right.
なお、レーザ光源としてはＣＯ□レーザのようなＱスイ
ッチ・レーザを用いるために、基板表面の掻く限られた
領域だけが瞬間的に加熱されるだけなので、室温でもダ
イヤモンド膜を作ることができる。Note that since a Q-switched laser such as a CO□ laser is used as the laser light source, only a limited area of the substrate surface is heated momentarily, so a diamond film can be formed even at room temperature.
実施例１：
被処理基板４として（１１１）面を表面にもつシリコン
（Ｓｉ）基板を用い、これを排気系を備えた真空室９の
中に設けられており水平方向と垂直方向に移動が可能な
基板台ｌＯの上に固定した。Example 1: A silicon (Si) substrate with a (111) plane on the surface was used as the substrate 4 to be processed, and this was placed in a vacuum chamber 9 equipped with an exhaust system, so that it could be moved in the horizontal and vertical directions. It was fixed on a possible substrate stand lO.
この真空室９の上部にはセレン化亜鉛（Ｚｎ５ｅ）より
なる窓１１があり、また、真空室の上部には炭素化合物
ガス１２と雰囲気ガス１３のボンベからの供給管１４が
開口している。There is a window 11 made of zinc selenide (Zn5e) in the upper part of the vacuum chamber 9, and a supply pipe 14 from a cylinder for carbon compound gas 12 and atmospheric gas 13 is opened in the upper part of the vacuum chamber.
また、窓１１の上にはＴＥ＾−ＣＯ□レーザ光源１５が
あり、出射された波長１Ｏ０６μＩの赤外レーザ光１は
Ｚｎ５ｅよりなり焦点距離が７０ａｍのレンズ２により
集光されるが、被処理基板４はこの焦点の直下にくるよ
う基板台１０を調節した。Further, there is a TE^-CO□ laser light source 15 above the window 11, and the emitted infrared laser light 1 with a wavelength of 1006 μI is focused by a lens 2 made of Zn5e and having a focal length of 70 am. The substrate stand 10 was adjusted so that the substrate 4 was directly under this focal point.
そして、真空室９の中に３％のメタン（ＣＨ４）を含む
Ｈ２ガスを導入すると共に排気系を動作させて真空室９
の気圧を２００ Ｔｏｒｒに保った。Then, H2 gas containing 3% methane (CH4) is introduced into the vacuum chamber 9, and the exhaust system is operated to
The air pressure was maintained at 200 Torr.
そして、被処理基板（Ｓｉウェハ）４を室温に保ったま
−１ｌＯパルス／秒の速度で６０分間に亙ってレーザ照
射を行い、合成物を走査電子顕微鏡（ＳＥＭ）とラマン
分光法で調べた。Then, the substrate to be processed (Si wafer) 4 was kept at room temperature and irradiated with laser at a rate of -1 lO pulse/sec for 60 minutes, and the composite was examined using a scanning electron microscope (SEM) and Raman spectroscopy. .
その結果、合成物は厚さが５μｍの多結晶膜であり、ま
たラマン分光では１３３２ｃｍ−’にダイヤモンド特有
のシャープなピークが検出できた。As a result, the composite was a polycrystalline film with a thickness of 5 μm, and a sharp peak unique to diamond was detected at 1332 cm −′ in Raman spectroscopy.
実施例２：
第４図は別の装置構成を示すもので、炭素化合物ガス１
２と雰囲気ガス１３からなる混合ガスを真空室９に設け
たノズル１６を通しで被処理基板４の方向に噴出させ、
ノズル１６の先端部にレーザ光１の焦点を結ばせてレー
ザブレークダウンを起こさせた点のみ実施例１と異なっ
ている。Example 2: Figure 4 shows another device configuration, in which carbon compound gas 1
A mixed gas consisting of 2 and an atmospheric gas 13 is ejected through a nozzle 16 provided in the vacuum chamber 9 in the direction of the substrate 4 to be processed,
The only difference from Example 1 is that the laser beam 1 is focused on the tip of the nozzle 16 to cause laser breakdown.
本実施例においては炭素化合物ガスとしてＣＨ４ガスを
２．５ ＳＣＣＭ（Ｓｔａｎｄａｒｄ Ｃｕｂｉｃ Ｃ
ｅｎｔｉｍｅｔｅｒ ＰｅｒＭｉｎｕｔｅ） ＋雰囲気
ガスとしてＨ２ガスを５０５ＣＣＨの流量で供給し、気
圧を５０ Ｔｏｒｒに保ちながら６０分に亙ってレーザ
照射を行った。In this example, CH4 gas was used as the carbon compound gas at 2.5 SCCM (Standard Cubic C
H2 gas was supplied as an atmospheric gas at a flow rate of 505 CCH, and laser irradiation was performed for 60 minutes while maintaining the atmospheric pressure at 50 Torr.
その結果、厚さ２０μ園のダイヤモンド多結晶膜を合成
することができた。As a result, it was possible to synthesize a diamond polycrystalline film with a thickness of about 20 μm.
実施例３：
第４図の装置を用い、ＣＨ，ガスの流量を５ ＳＣＣ阿
とし、雰囲気ガスを０□にかえ、１０ ＳＣＣＭの流量
で真空室９のノズル１６から噴出させ、真空室の気圧を
５０ Ｔｏｒｒに保ちながら６０分に亙ってレーザ照射
を行った。Example 3: Using the apparatus shown in Fig. 4, the flow rate of CH gas was set to 5 SCC, the atmospheric gas was changed to 0□, and a flow rate of 10 SCCM was ejected from the nozzle 16 of the vacuum chamber 9, and the pressure in the vacuum chamber was lowered. Laser irradiation was performed for 60 minutes while maintaining the pressure at 50 Torr.
なお、この場合はＣ１，ガスに対する０２ガスの混合比
を等量比よりも少なくし、ＣＨ４ガスが総て酸化してＣ
Ｏ□とならないようにする必要がある。In this case, the mixing ratio of 02 gas to C1 gas is lower than the equivalent ratio, so that all CH4 gas is oxidized and becomes C
It is necessary to avoid O□.
本実験の結果、厚さが３μ鋼のダイヤモンド多結晶膜を
合成することができた。As a result of this experiment, we were able to synthesize a diamond polycrystalline film with a thickness of 3 μm.
従来のダイヤモンド合成法においては、合成温度の下限
は約６００°Ｃであったが、本発明の実施により常温近
くまで下げることができ、これにより半導体素子のパッ
シベーション膜やアルミニウム合金への耐摩耗性コーテ
ィングなどへの利用が可能となった。In the conventional diamond synthesis method, the lower limit of synthesis temperature was approximately 600°C, but by implementing the present invention, it can be lowered to near room temperature, which improves the wear resistance of passivation films of semiconductor devices and aluminum alloys. It can now be used for coatings, etc.
また、製膜時の熱歪による剥離や割れを無くすことが可
能になった。Furthermore, it has become possible to eliminate peeling and cracking due to thermal strain during film formation.
第１図は本発明の原理図、
第２図は実用的な合成方法の説明図、
第３図は本発明に係るダイヤモンド合成装置の構成図、
第４図は本発明に係る別のダイヤモンド合成装置の構成
図、
である。
図において、
１は赤外レーザ光、
３は焦点、
５はダイヤモンド膜、
９は真空室、
１１は窓、
１３は雰囲気ガス、
である。Fig. 1 is a diagram of the principle of the present invention, Fig. 2 is an explanatory diagram of a practical synthesis method, Fig. 3 is a block diagram of a diamond synthesis apparatus according to the present invention, and Fig. 4 is another diamond synthesis method according to the present invention. This is a configuration diagram of the device. In the figure, 1 is an infrared laser beam, 3 is a focal point, 5 is a diamond film, 9 is a vacuum chamber, 11 is a window, and 13 is an atmospheric gas.
Claims (2)
）を置き、大出力の赤外レーザ光（１）をレンズ（２）
により被処理基板（４）の直上に集光し、レーザブレー
クダウンを起こさせて炭素化合物のガスプラズマを発生
せしめ、前記被処理基板（４）の上にダイヤモンド膜（
５）を形成することを特徴とするダイヤモンド膜の合成
方法。(1) The substrate to be processed (4
), and place a high-output infrared laser beam (1) on the lens (2).
The light is focused directly above the substrate to be processed (4), causing laser breakdown to generate a carbon compound gas plasma, and depositing a diamond film on the substrate to be processed (4).
5) A method for synthesizing a diamond film, characterized by forming the following.
板（４）の直上でレーザブレークダウンを起こさせる手
段と、 被処理基板（４）を垂直方向および水平方向に移動可能
の基板台（１０）に固定し、レーザブレークダウンの発
生位置に調整する手段と、 所定量の炭素化合物ガス（１２）と雰囲気ガス（１３）
とを被処理基板（４）が固定されている真空室（９）に
供給する手段と、 レーザブレークダウンの終わったガスを排気する手段と
、 を少なくとも含んで構成されていることを特徴とするダ
イヤモンド膜の合成装置。(2) A means for condensing a high-output infrared laser beam (1) to cause laser breakdown directly above the substrate to be processed (4), and moving the substrate to be processed (4) in vertical and horizontal directions. a means for fixing the substrate to a substrate stand (10) and adjusting it to a position where laser breakdown occurs; and a predetermined amount of carbon compound gas (12) and atmospheric gas (13).
and a means for supplying gas to a vacuum chamber (9) to which a substrate to be processed (4) is fixed; and a means for exhausting gas after laser breakdown. Diamond film synthesis equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005339A JP2770520B2 (en) | 1990-01-12 | 1990-01-12 | Method and apparatus for synthesizing diamond film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005339A JP2770520B2 (en) | 1990-01-12 | 1990-01-12 | Method and apparatus for synthesizing diamond film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03208893A true JPH03208893A (en) | 1991-09-12 |
| JP2770520B2 JP2770520B2 (en) | 1998-07-02 |
Family
ID=11608469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005339A Expired - Fee Related JP2770520B2 (en) | 1990-01-12 | 1990-01-12 | Method and apparatus for synthesizing diamond film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2770520B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03177575A (en) * | 1989-02-24 | 1991-08-01 | Mcdonnell Douglas Corp | Diamond-like coating and its formation |
-
1990
- 1990-01-12 JP JP2005339A patent/JP2770520B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03177575A (en) * | 1989-02-24 | 1991-08-01 | Mcdonnell Douglas Corp | Diamond-like coating and its formation |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2770520B2 (en) | 1998-07-02 |
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