JPH0352408B2 - - Google Patents
Info
- Publication number
- JPH0352408B2 JPH0352408B2 JP8275983A JP8275983A JPH0352408B2 JP H0352408 B2 JPH0352408 B2 JP H0352408B2 JP 8275983 A JP8275983 A JP 8275983A JP 8275983 A JP8275983 A JP 8275983A JP H0352408 B2 JPH0352408 B2 JP H0352408B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- chlorinated silicon
- chlorinated
- raw material
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002994 raw material Substances 0.000 claims description 18
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 239000003085 diluting agent Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 150000003376 silicon Chemical class 0.000 description 36
- 239000000460 chlorine Substances 0.000 description 34
- 238000006243 chemical reaction Methods 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 10
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 8
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000005049 silicon tetrachloride Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- PZKOFHKJGUNVTM-UHFFFAOYSA-N trichloro-[dichloro(trichlorosilyl)silyl]silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)[Si](Cl)(Cl)Cl PZKOFHKJGUNVTM-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 150000001805 chlorine compounds Chemical class 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910000519 Ferrosilicon Inorganic materials 0.000 description 2
- MKPXGEVFQSIKGE-UHFFFAOYSA-N [Mg].[Si] Chemical compound [Mg].[Si] MKPXGEVFQSIKGE-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- OSMSIOKMMFKNIL-UHFFFAOYSA-N calcium;silicon Chemical compound [Ca]=[Si] OSMSIOKMMFKNIL-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000007323 disproportionation reaction Methods 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- -1 hexachlorodisilane Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920000548 poly(silane) polymer Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000011856 silicon-based particle Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000012084 conversion product Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000001577 simple distillation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8275983A JPS59207830A (ja) | 1983-05-13 | 1983-05-13 | 塩素化ケイ素の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8275983A JPS59207830A (ja) | 1983-05-13 | 1983-05-13 | 塩素化ケイ素の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59207830A JPS59207830A (ja) | 1984-11-26 |
JPH0352408B2 true JPH0352408B2 (zh) | 1991-08-09 |
Family
ID=13783365
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8275983A Granted JPS59207830A (ja) | 1983-05-13 | 1983-05-13 | 塩素化ケイ素の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59207830A (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4841083A (en) * | 1987-06-03 | 1989-06-20 | Mitsui Toatsu Chemicals, Incorporated | Ladder polysilanes |
US7922814B2 (en) * | 2005-11-29 | 2011-04-12 | Chisso Corporation | Production process for high purity polycrystal silicon and production apparatus for the same |
DE102009056437B4 (de) | 2009-12-02 | 2013-06-27 | Spawnt Private S.À.R.L. | Verfahren und Vorrichtung zur Herstellung von kurzkettigen halogenierten Polysilanen |
DE102010062984A1 (de) * | 2010-12-14 | 2012-06-14 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Halogen- und Hydridosilane |
-
1983
- 1983-05-13 JP JP8275983A patent/JPS59207830A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS59207830A (ja) | 1984-11-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4465961B2 (ja) | 六塩化二珪素の製造方法 | |
US7632478B2 (en) | Process for producing silicon | |
TWI602780B (zh) | 受碳化合物污染的氯矽烷或氯矽烷混合物的後處理方法 | |
WO2003040036A1 (fr) | Procede de production de silicium | |
JP5601438B2 (ja) | トリクロロシランの製造方法およびトリクロロシラン製造装置 | |
JP5311014B2 (ja) | 転換反応ガスの分離回収方法。 | |
TWI474976B (zh) | 在涉及歧化操作之實質上封閉迴路方法中之多晶矽製造 | |
JP5621957B2 (ja) | トリクロロシランの製造方法および製造装置 | |
JP2004002138A (ja) | シリコンの製造方法 | |
TW201233627A (en) | Process for preparing trichlorosilane | |
KR101948332B1 (ko) | 실질적인 폐쇄 루프 공정 및 시스템에 의한 다결정질 실리콘의 제조 | |
US8974761B2 (en) | Methods for producing silane | |
JPH0352408B2 (zh) | ||
JP2710382B2 (ja) | 高純度ジクロロシランの製造方法 | |
JPH01226712A (ja) | ジクロルシランの製造方法 | |
RU2519460C1 (ru) | Способ получения кремния с использованием субхлорида алюминия | |
JP2010132536A (ja) | トリクロロシランの製造方法および用途 | |
JPS59195519A (ja) | ヘキサクロロジシランの製造法 | |
KR20160144541A (ko) | 삼염화실란의 제조방법 | |
JPS59121109A (ja) | 高純度シリコンの製造方法 | |
JPS59207829A (ja) | ヘキサクロロジシランの製造方法 | |
JPS59156907A (ja) | シランの製造方法 | |
KR20120027382A (ko) | 올리고할로겐 실란의 제조 방법 | |
JPS59162121A (ja) | 高純度ポリクロロシランの製造方法 | |
JPH0688773B2 (ja) | ヘキサクロロジシランの製造方法 |