JPH0352218B2 - - Google Patents

Info

Publication number
JPH0352218B2
JPH0352218B2 JP55088418A JP8841880A JPH0352218B2 JP H0352218 B2 JPH0352218 B2 JP H0352218B2 JP 55088418 A JP55088418 A JP 55088418A JP 8841880 A JP8841880 A JP 8841880A JP H0352218 B2 JPH0352218 B2 JP H0352218B2
Authority
JP
Japan
Prior art keywords
active
load
mostq
ccd
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55088418A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5713764A (en
Inventor
Yoshihiro Myamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8841880A priority Critical patent/JPS5713764A/ja
Publication of JPS5713764A publication Critical patent/JPS5713764A/ja
Publication of JPH0352218B2 publication Critical patent/JPH0352218B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454—Output structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP8841880A 1980-06-27 1980-06-27 Charge detector Granted JPS5713764A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8841880A JPS5713764A (en) 1980-06-27 1980-06-27 Charge detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8841880A JPS5713764A (en) 1980-06-27 1980-06-27 Charge detector

Publications (2)

Publication Number Publication Date
JPS5713764A JPS5713764A (en) 1982-01-23
JPH0352218B2 true JPH0352218B2 (enrdf_load_stackoverflow) 1991-08-09

Family

ID=13942233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8841880A Granted JPS5713764A (en) 1980-06-27 1980-06-27 Charge detector

Country Status (1)

Country Link
JP (1) JPS5713764A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58128767A (ja) * 1982-01-28 1983-08-01 Toshiba Corp 電荷転送装置の製造方法
JPS5994870A (ja) * 1982-11-22 1984-05-31 Nec Corp 電荷転送素子
JPS61131854U (enrdf_load_stackoverflow) * 1985-02-06 1986-08-18
JP2535888B2 (ja) * 1987-03-19 1996-09-18 ソニー株式会社 固体撮像装置
JPH03245504A (ja) * 1990-02-23 1991-11-01 Sumitomo Heavy Ind Ltd 臨界磁場測定装置用磁石
JPH05315587A (ja) * 1992-04-02 1993-11-26 Nec Corp 半導体装置
JPH0786568A (ja) * 1993-09-09 1995-03-31 Nec Corp 電荷転送装置
JPH07122733A (ja) * 1993-10-21 1995-05-12 Nec Corp 電荷転送装置およびその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5632764A (en) * 1979-08-27 1981-04-02 Nec Corp Charge coupled device
JPS56169365A (en) * 1980-05-30 1981-12-26 Fujitsu Ltd Charge detector

Also Published As

Publication number Publication date
JPS5713764A (en) 1982-01-23

Similar Documents

Publication Publication Date Title
EP0632506B1 (en) A charge detection amplifier
US4716446A (en) Insulated dual gate field effect transistor
US5191398A (en) Charge transfer device producing a noise-free output
JP3386863B2 (ja) 薄膜トランジスタ及びその製造方法
JP3281700B2 (ja) 半導体装置
US4484209A (en) SOS Mosfet with thinned channel contact region
US5430312A (en) Charge modulated device
US4041519A (en) Low transient effect switching device and method
JPH0352218B2 (enrdf_load_stackoverflow)
JP2005223356A (ja) 電荷結合素子型イメージセンサ
US5965921A (en) High voltage inverter circuit
JPS5816565A (ja) 絶縁ゲ−ト形電界効果トランジスタ
JPS61198676A (ja) 半導体集積回路装置
US4099317A (en) Method for fabricating self-aligned CCD devices and their output self-aligned MOS transistors on a single semiconductor substrate
JPH07106553A (ja) 固体撮像素子
JPH07122733A (ja) 電荷転送装置およびその製造方法
JPS63168050A (ja) 半導体装置
US5294817A (en) Output circuit for charged transfer device and having a high detection sensitivity
US5652442A (en) Charge coupled device and imaging device having a charge coupled device
JPH05243281A (ja) 半導体装置及びその製造方法
US4250517A (en) Charge transfer, tetrode bucket-brigade device
JPH0319349A (ja) 電荷結合素子
JPS6315754B2 (enrdf_load_stackoverflow)
JPS60132367A (ja) 電荷転送装置
KR100197656B1 (ko) 반도체 에스.오.아이.소자의 제조방법