JPH0350363U - - Google Patents

Info

Publication number
JPH0350363U
JPH0350363U JP11003289U JP11003289U JPH0350363U JP H0350363 U JPH0350363 U JP H0350363U JP 11003289 U JP11003289 U JP 11003289U JP 11003289 U JP11003289 U JP 11003289U JP H0350363 U JPH0350363 U JP H0350363U
Authority
JP
Japan
Prior art keywords
gold
substrate
heat sink
platinum
chromium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11003289U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11003289U priority Critical patent/JPH0350363U/ja
Publication of JPH0350363U publication Critical patent/JPH0350363U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of drawings]

図面は、本考案の半導体レーザのヒートシンク
の1実施例を示し、第1図は断面図、第2図a〜
cは形成工程を示す断面図、第3図は半導体レー
ザの電流と光出力との関係図である。 1……ヒートシンク基板、2……レーザチツプ
用融着層、3……ステム用融着層、2a,3a…
…Cr層、2b,2d,3b……Au層、2c,
3c……Pt層、2e……In層、3d……Sn
層。
The drawings show an embodiment of a heat sink for a semiconductor laser according to the present invention, and FIG. 1 is a cross-sectional view, and FIG.
3c is a sectional view showing the formation process, and FIG. 3 is a diagram showing the relationship between the current and optical output of the semiconductor laser. DESCRIPTION OF SYMBOLS 1...Heat sink board, 2...Fusion layer for laser chip, 3...Fusion layer for stem, 2a, 3a...
...Cr layer, 2b, 2d, 3b...Au layer, 2c,
3c...Pt layer, 2e...In layer, 3d...Sn
layer.

Claims (1)

【実用新案登録請求の範囲】 立方晶窒化ホウ素又はダイヤモンドからなるヒ
ートシンク基板と、 前記基板の上面にクロム−金−白金−金−イン
ジウムの各層が順次積層されて形成されたレーザ
チツプ用融着層と、 前記基板の下面にクロム−金−白金−スズの各
層が順次積層されて形成されたシステム用融着層
と を備えた半導体レーザのヒートシンク。
[Claims for Utility Model Registration] A heat sink substrate made of cubic boron nitride or diamond, and a fusion layer for a laser chip formed by successively laminating layers of chromium, gold, platinum, gold, and indium on the upper surface of the substrate. . A heat sink for a semiconductor laser, comprising: a system adhesive layer formed by sequentially laminating chromium-gold-platinum-tin layers on the lower surface of the substrate.
JP11003289U 1989-09-20 1989-09-20 Pending JPH0350363U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11003289U JPH0350363U (en) 1989-09-20 1989-09-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11003289U JPH0350363U (en) 1989-09-20 1989-09-20

Publications (1)

Publication Number Publication Date
JPH0350363U true JPH0350363U (en) 1991-05-16

Family

ID=31658589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11003289U Pending JPH0350363U (en) 1989-09-20 1989-09-20

Country Status (1)

Country Link
JP (1) JPH0350363U (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852892A (en) * 1981-09-25 1983-03-29 Hitachi Ltd Mounting structure of compound semiconductor element
JPS6459838A (en) * 1987-08-31 1989-03-07 Denki Kagaku Kogyo Kk Heat sink

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852892A (en) * 1981-09-25 1983-03-29 Hitachi Ltd Mounting structure of compound semiconductor element
JPS6459838A (en) * 1987-08-31 1989-03-07 Denki Kagaku Kogyo Kk Heat sink

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