JPS62154669U - - Google Patents
Info
- Publication number
- JPS62154669U JPS62154669U JP4115486U JP4115486U JPS62154669U JP S62154669 U JPS62154669 U JP S62154669U JP 4115486 U JP4115486 U JP 4115486U JP 4115486 U JP4115486 U JP 4115486U JP S62154669 U JPS62154669 U JP S62154669U
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- semiconductor laser
- stem
- laser chip
- fixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims 3
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Description
第１図は本考案の実施例を示す断面図、第２図
は寿命特性を示す特性図、第３図は従来装置を示
す断面図である。
１……Ｓｉヒートシンク、２，６……第１、第
２のＡｕ層、３，７……第１、第２のＰｔ層、４
……Ａｕ層、５……Ｉｎ層、８……Ｓｎ層、９…
…半導体レーザチツプ、１０……Ｃｕステム、１
２……Ｉｎ―Ｓｎ合金半田。
FIG. 1 is a sectional view showing an embodiment of the present invention, FIG. 2 is a characteristic diagram showing life characteristics, and FIG. 3 is a sectional view showing a conventional device. 1... Si heat sink, 2, 6... First and second Au layers, 3, 7... First and second Pt layers, 4
...Au layer, 5...In layer, 8...Sn layer, 9...
...Semiconductor laser chip, 10...Cu stem, 1
2...In-Sn alloy solder.
Claims (1)
てＣｕステム上にボンデイングしてなる半導体レ
ーザ装置において、 上記ＳｉヒートシンクをＰ型Ｓｉで構成すると
共に上記Ｓｉヒートシンクの上記半導体レーザチ
ツプ固着面にはＡｕ、Ｐｔ、Ａｕ、Ｉｎが順次積
層され、上記Ｓｉヒートシンクの上記Ｃｕステム
固着面にはＡｕ、Ｐｔ、Ｓｎが順次積層され、上
記Ｓｉヒートシンクと上記ＣｕステムとはＩｎ―
Ｓｎ合金半田にて固着されたことを特徴とする半
導体レーザ装置。[Claims for Utility Model Registration] A semiconductor laser device comprising a semiconductor laser chip bonded onto a Cu stem via a Si heat sink, wherein the Si heat sink is made of P-type Si, and the semiconductor laser chip is attached to a surface of the Si heat sink on which the semiconductor laser chip is fixed. Au, Pt, Au, and In are sequentially laminated on the Cu stem fixing surface of the Si heat sink, and Au, Pt, and Sn are sequentially laminated on the Cu stem fixing surface of the Si heat sink, and the Si heat sink and the Cu stem are In-
A semiconductor laser device characterized in that it is fixed with Sn alloy solder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4115486U JPH0423338Y2 (en) | 1986-03-20 | 1986-03-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4115486U JPH0423338Y2 (en) | 1986-03-20 | 1986-03-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62154669U true JPS62154669U (en) | 1987-10-01 |
| JPH0423338Y2 JPH0423338Y2 (en) | 1992-05-29 |
Family
ID=30855891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4115486U Expired JPH0423338Y2 (en) | 1986-03-20 | 1986-03-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0423338Y2 (en) |
-
1986
- 1986-03-20 JP JP4115486U patent/JPH0423338Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0423338Y2 (en) | 1992-05-29 |
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