JPS6210461U - - Google Patents
Info
- Publication number
- JPS6210461U JPS6210461U JP10073585U JP10073585U JPS6210461U JP S6210461 U JPS6210461 U JP S6210461U JP 10073585 U JP10073585 U JP 10073585U JP 10073585 U JP10073585 U JP 10073585U JP S6210461 U JPS6210461 U JP S6210461U
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- semiconductor laser
- alloy
- stem
- sequentially laminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910015367 Au—Sb Inorganic materials 0.000 claims description 2
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910001245 Sb alloy Inorganic materials 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Description
第1図は本考案の実施例を示す断面図、第2図
は寿命特性を示す特性図、第3図は従来装置を示
す断面図である。
1…Siヒートシンク、2,6…第1、第2の
Au―Sb層、3,7…第1、第2のPt層、4
…Au層、5…In層、8…Sn層、9…半導体
レーザチツプ、10…Cuステム、12…In―
Sn合金半田。
FIG. 1 is a sectional view showing an embodiment of the present invention, FIG. 2 is a characteristic diagram showing life characteristics, and FIG. 3 is a sectional view showing a conventional device. 1... Si heat sink, 2, 6... First and second Au-Sb layers, 3, 7... First and second Pt layers, 4
...Au layer, 5...In layer, 8...Sn layer, 9...semiconductor laser chip, 10...Cu stem, 12...In-
Sn alloy solder.
Claims (1)
てCuステム上にボンデイングしてなる半導体レ
ーザ装置において、 上記Siヒートシンクの上記半導体レーザチツ
プ固着面にはAu―Sb合金、Pt,Au,In
が順次積層され、上記Siヒートシンクの上記C
uステム固着面にはAu―Sb合金、Pt,Sn
が順次積層され、上記Siヒートシンクと上記C
uステムとはIn―Sn合金半田にて回着された
ことを特徴とする半導体レーザ装置。[Claims for Utility Model Registration] In a semiconductor laser device formed by bonding a semiconductor laser chip onto a Cu stem via a Si heat sink, the surface of the Si heat sink to which the semiconductor laser chip is fixed is made of Au--Sb alloy, Pt, Au, In.
are sequentially laminated, and the above C of the above Si heat sink is
The u-stem fixing surface is made of Au-Sb alloy, Pt, Sn.
are sequentially laminated, and the above Si heat sink and the above C
The u-stem is a semiconductor laser device characterized by being connected using In--Sn alloy solder.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10073585U JPH041742Y2 (en) | 1985-07-02 | 1985-07-02 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10073585U JPH041742Y2 (en) | 1985-07-02 | 1985-07-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6210461U true JPS6210461U (en) | 1987-01-22 |
JPH041742Y2 JPH041742Y2 (en) | 1992-01-21 |
Family
ID=30970834
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10073585U Expired JPH041742Y2 (en) | 1985-07-02 | 1985-07-02 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH041742Y2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06147030A (en) * | 1992-10-29 | 1994-05-27 | Kiyousan Denki Kk | Fuel vaporized gas discharge restraining device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7129581B1 (en) * | 2022-06-01 | 2022-09-01 | 田中貴金属工業株式会社 | Materials for deposition equipment |
JP7175420B1 (en) * | 2022-06-01 | 2022-11-18 | 田中貴金属工業株式会社 | METHOD FOR MANUFACTURING MEMBERS FOR FILM-FORMING APPARATUS, METHOD FOR REMOVING DEPOSIT, METHOD FOR RECOVERING VALUABLE METAL, AND METHOD FOR REPRODUCTION OF MEMBER FOR FILM-FORMING APPARATUS |
-
1985
- 1985-07-02 JP JP10073585U patent/JPH041742Y2/ja not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06147030A (en) * | 1992-10-29 | 1994-05-27 | Kiyousan Denki Kk | Fuel vaporized gas discharge restraining device |
Also Published As
Publication number | Publication date |
---|---|
JPH041742Y2 (en) | 1992-01-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6210461U (en) | ||
JPH0252444U (en) | ||
JPH0183331U (en) | ||
JPS62154669U (en) | ||
JPS628641U (en) | ||
JPH02138455U (en) | ||
JPH0369233U (en) | ||
JPS602858U (en) | heat sink electrode | |
JPH0350363U (en) | ||
JPS633168U (en) | ||
JPS6212952U (en) | ||
JPS6185175U (en) | ||
JPS6245837U (en) | ||
JPH02138453U (en) | ||
JPS62199970U (en) | ||
JPS6344453U (en) | ||
JPS63106133U (en) | ||
JPS63178359U (en) | ||
JPS6183041U (en) | ||
JPH0286134U (en) | ||
JPS62168670U (en) | ||
JPH02146439U (en) | ||
JPH01104738U (en) | ||
JPS60194361U (en) | semiconductor laser equipment | |
JPH01146549U (en) |