JPH0369233U - - Google Patents

Info

Publication number
JPH0369233U
JPH0369233U JP1989130600U JP13060089U JPH0369233U JP H0369233 U JPH0369233 U JP H0369233U JP 1989130600 U JP1989130600 U JP 1989130600U JP 13060089 U JP13060089 U JP 13060089U JP H0369233 U JPH0369233 U JP H0369233U
Authority
JP
Japan
Prior art keywords
aluminum electrode
semiconductor device
film carrier
film
view
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1989130600U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1989130600U priority Critical patent/JPH0369233U/ja
Publication of JPH0369233U publication Critical patent/JPH0369233U/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods

Landscapes

  • Wire Bonding (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の実施例を示す半導体素子の電
極形成工程断面図、第2図は本考案の半導体素子
へのフイルムキヤリアの接続状態を示す一部破断
斜視図、第3図は従来の半導体素子の電極形成工
程断面図、第4図は従来の半導体素子の金突起電
極とフイルムキヤリア法によるインナリードとの
接続状態を示す断面図である。 31……半導体素子、32……熱酸化(SiO
)膜、33……アルミニウム電極、34……保
護(Si)膜、37……レジスト、38…
…開口部、40……インナリード、41……ポリ
イミドフイルム、46……ボンデイング治具。
FIG. 1 is a cross-sectional view of the electrode formation process of a semiconductor device showing an embodiment of the present invention, FIG. 2 is a partially cutaway perspective view showing the state of connection of a film carrier to the semiconductor device of the present invention, and FIG. 3 is a conventional FIG. 4 is a cross-sectional view showing the process of forming electrodes of a semiconductor element. FIG. 4 is a cross-sectional view showing a connection state between a gold protrusion electrode of a conventional semiconductor element and an inner lead by a film carrier method. 31...Semiconductor element, 32...Thermal oxidation (SiO
2 ) Film, 33... Aluminum electrode, 34... Protective (Si 3 N 4 ) film, 37... Resist, 38...
...opening, 40...inner lead, 41...polyimide film, 46...bonding jig.

Claims (1)

【実用新案登録請求の範囲】 フイルムキヤリアを用いて接続する半導体素子
において (a) 半導体素子の主表面に形成されるアルミニ
ウム電極と、 (b) 該アルミニウム電極に対応する一部を切い
欠いて形成される保護膜とを設け、 (c) 前記アルミニウム電極に直接フイルムキヤ
リアのリードを接続するようにしたことを特徴と
する半導体素子の電極構造。
[Claims for Utility Model Registration] In a semiconductor device connected using a film carrier, (a) an aluminum electrode formed on the main surface of the semiconductor device, and (b) a portion corresponding to the aluminum electrode cut out. (c) a lead of a film carrier is directly connected to the aluminum electrode.
JP1989130600U 1989-11-10 1989-11-10 Pending JPH0369233U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1989130600U JPH0369233U (en) 1989-11-10 1989-11-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989130600U JPH0369233U (en) 1989-11-10 1989-11-10

Publications (1)

Publication Number Publication Date
JPH0369233U true JPH0369233U (en) 1991-07-09

Family

ID=31678166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989130600U Pending JPH0369233U (en) 1989-11-10 1989-11-10

Country Status (1)

Country Link
JP (1) JPH0369233U (en)

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