JPH0348658B2 - - Google Patents
Info
- Publication number
- JPH0348658B2 JPH0348658B2 JP20347483A JP20347483A JPH0348658B2 JP H0348658 B2 JPH0348658 B2 JP H0348658B2 JP 20347483 A JP20347483 A JP 20347483A JP 20347483 A JP20347483 A JP 20347483A JP H0348658 B2 JPH0348658 B2 JP H0348658B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- silicon substrate
- silicon
- semiconductor device
- sides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 47
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 39
- 239000010703 silicon Substances 0.000 claims description 39
- 235000012239 silicon dioxide Nutrition 0.000 claims description 23
- 239000000377 silicon dioxide Substances 0.000 claims description 23
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 18
- 229910021426 porous silicon Inorganic materials 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 229960002050 hydrofluoric acid Drugs 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000002048 anodisation reaction Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76245—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using full isolation by porous oxide silicon, i.e. FIPOS techniques
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20347483A JPS6094737A (ja) | 1983-10-28 | 1983-10-28 | 半導体装置の製法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20347483A JPS6094737A (ja) | 1983-10-28 | 1983-10-28 | 半導体装置の製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6094737A JPS6094737A (ja) | 1985-05-27 |
| JPH0348658B2 true JPH0348658B2 (enrdf_load_stackoverflow) | 1991-07-25 |
Family
ID=16474736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20347483A Granted JPS6094737A (ja) | 1983-10-28 | 1983-10-28 | 半導体装置の製法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6094737A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3413090B2 (ja) | 1997-12-26 | 2003-06-03 | キヤノン株式会社 | 陽極化成装置及び陽極化成処理方法 |
| JP2000277478A (ja) | 1999-03-25 | 2000-10-06 | Canon Inc | 陽極化成装置、陽極化成システム、基板の処理装置及び処理方法、並びに基板の製造方法 |
| US6410436B2 (en) | 1999-03-26 | 2002-06-25 | Canon Kabushiki Kaisha | Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate |
| JP3677199B2 (ja) | 2000-07-31 | 2005-07-27 | 和泉電気株式会社 | 押しボタンスイッチ及びこれを備えた教示ペンダント |
| KR101866675B1 (ko) * | 2014-06-27 | 2018-06-11 | 가부시키가이샤 무라타 세이사쿠쇼 | 도금 장치 |
-
1983
- 1983-10-28 JP JP20347483A patent/JPS6094737A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6094737A (ja) | 1985-05-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2863813B2 (ja) | シリコン基板上に絶縁構造を形成する方法 | |
| JPH0671043B2 (ja) | シリコン結晶体構造の製造方法 | |
| US5356827A (en) | Method of manufacturing semiconductor device | |
| JPS6159852A (ja) | 半導体装置の製造方法 | |
| US6331470B1 (en) | Process for manufacturing a semiconductor material wafer having power regions dielectrically insulated from circuitry regions | |
| JPH0348658B2 (enrdf_load_stackoverflow) | ||
| JPH0793368B2 (ja) | 半導体記憶装置の製造方法 | |
| JP2001156166A (ja) | 半導体装置の製造方法 | |
| JPS6227744B2 (enrdf_load_stackoverflow) | ||
| JP2839088B2 (ja) | 半導体装置 | |
| JPS62108539A (ja) | Ｓｏｉ構造半導体装置の製造方法 | |
| JPS6095969A (ja) | 半導体集積回路の製造方法 | |
| JPH0530075B2 (enrdf_load_stackoverflow) | ||
| JPH0548108A (ja) | 半導体装置およびその製造方法 | |
| JP3447592B2 (ja) | 半導体装置とその製造方法 | |
| JPS5825245A (ja) | 半導体集積回路およびその製法 | |
| KR19980084714A (ko) | 반도체소자의 분리영역 제조방법 | |
| JPS58159348A (ja) | 半導体装置の分離方法 | |
| JPH0789564B2 (ja) | 半導体装置の製造方法 | |
| JPS5951745B2 (ja) | 半導体装置の製造方法 | |
| JPS5879735A (ja) | 半導体集積回路 | |
| JPH0387059A (ja) | 半導体集積回路及びその製造方法 | |
| JP2000068368A (ja) | 半導体装置の製造方法 | |
| JPS63144541A (ja) | 半導体装置およびその製造方法 | |
| JPS61141178A (ja) | 半導体装置 |