JPH0348658B2 - - Google Patents
Info
- Publication number
- JPH0348658B2 JPH0348658B2 JP58203474A JP20347483A JPH0348658B2 JP H0348658 B2 JPH0348658 B2 JP H0348658B2 JP 58203474 A JP58203474 A JP 58203474A JP 20347483 A JP20347483 A JP 20347483A JP H0348658 B2 JPH0348658 B2 JP H0348658B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- silicon substrate
- silicon
- semiconductor device
- sides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/191—Preparing SOI wafers using full isolation by porous oxide silicon [FIPOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
Landscapes
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58203474A JPS6094737A (ja) | 1983-10-28 | 1983-10-28 | 半導体装置の製法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58203474A JPS6094737A (ja) | 1983-10-28 | 1983-10-28 | 半導体装置の製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6094737A JPS6094737A (ja) | 1985-05-27 |
| JPH0348658B2 true JPH0348658B2 (2) | 1991-07-25 |
Family
ID=16474736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58203474A Granted JPS6094737A (ja) | 1983-10-28 | 1983-10-28 | 半導体装置の製法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6094737A (2) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3413090B2 (ja) | 1997-12-26 | 2003-06-03 | キヤノン株式会社 | 陽極化成装置及び陽極化成処理方法 |
| JP2000277478A (ja) | 1999-03-25 | 2000-10-06 | Canon Inc | 陽極化成装置、陽極化成システム、基板の処理装置及び処理方法、並びに基板の製造方法 |
| US6410436B2 (en) | 1999-03-26 | 2002-06-25 | Canon Kabushiki Kaisha | Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate |
| JP3677199B2 (ja) | 2000-07-31 | 2005-07-27 | 和泉電気株式会社 | 押しボタンスイッチ及びこれを備えた教示ペンダント |
| CN106460223B (zh) * | 2014-06-27 | 2018-09-28 | 株式会社村田制作所 | 电镀装置 |
-
1983
- 1983-10-28 JP JP58203474A patent/JPS6094737A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6094737A (ja) | 1985-05-27 |
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