JPH0348649B2 - - Google Patents

Info

Publication number
JPH0348649B2
JPH0348649B2 JP59097642A JP9764284A JPH0348649B2 JP H0348649 B2 JPH0348649 B2 JP H0348649B2 JP 59097642 A JP59097642 A JP 59097642A JP 9764284 A JP9764284 A JP 9764284A JP H0348649 B2 JPH0348649 B2 JP H0348649B2
Authority
JP
Japan
Prior art keywords
aperture
alignment
electron beam
current
correction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59097642A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6010720A (ja
Inventor
Kei Dooran Samyueru
Furaa Heia Donarudo
Robaato Torotsutaa Rarufu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS6010720A publication Critical patent/JPS6010720A/ja
Publication of JPH0348649B2 publication Critical patent/JPH0348649B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
JP59097642A 1983-06-27 1984-05-17 電子ビ−ム制御装置 Granted JPS6010720A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/507,638 US4568861A (en) 1983-06-27 1983-06-27 Method and apparatus for controlling alignment and brightness of an electron beam
US507638 1983-06-27

Publications (2)

Publication Number Publication Date
JPS6010720A JPS6010720A (ja) 1985-01-19
JPH0348649B2 true JPH0348649B2 (enExample) 1991-07-25

Family

ID=24019506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59097642A Granted JPS6010720A (ja) 1983-06-27 1984-05-17 電子ビ−ム制御装置

Country Status (4)

Country Link
US (1) US4568861A (enExample)
EP (1) EP0131699B1 (enExample)
JP (1) JPS6010720A (enExample)
DE (1) DE3469100D1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8428198D0 (en) * 1984-11-08 1984-12-19 Adwel Ltd Motor monitor synchronisation system
US4821196A (en) * 1987-02-20 1989-04-11 International Business Machines Corporation High resolution automatic focus correction electronic subsystem for E-beam lithography
EP0330763A1 (en) * 1988-03-03 1989-09-06 Koninklijke Philips Electronics N.V. Charged particle apparatus with automatic beam set-up
DE58907191D1 (de) * 1989-02-09 1994-04-14 Balzers Hochvakuum Verfahren zum Zentrieren eines Elektronenstrahles.
CA1308203C (en) * 1989-06-01 1992-09-29 Nanoquest (Canada) Inc. Magnification compensation apparatus
RU2019881C1 (ru) * 1991-12-26 1994-09-15 Физический институт им.П.Н.Лебедева РАН Электронно-лучевая трубка
JP3272820B2 (ja) * 1993-06-24 2002-04-08 富士通株式会社 電子ビーム露光装置及び方法
KR0147862B1 (ko) * 1994-08-25 1998-09-15 김광호 다중모드 모니터의 자동 빔전류 조성회로 및 그 방법
US6145438A (en) * 1998-03-20 2000-11-14 Berglund; C. Neil Method and apparatus for direct writing of semiconductor die using microcolumn array
US6262425B1 (en) * 1999-03-11 2001-07-17 International Business Machines Corporation Curvilinear axis set-up for charged particle lithography
US6456019B1 (en) 2001-02-03 2002-09-24 Nikon Corporation Real time measurement of leakage current in high voltage electron guns
JP7411521B2 (ja) * 2020-09-03 2024-01-11 株式会社ニューフレアテクノロジー 荷電粒子ビーム調整方法、荷電粒子ビーム描画方法、および荷電粒子ビーム照射装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3699304A (en) * 1969-12-15 1972-10-17 Ibm Electron beam deflection control method and apparatus
DE2117193A1 (de) * 1971-04-08 1972-10-12 Licentia Gmbh Anordnung zur Feinpositionierung eines Elektronenstrahles
US3894271A (en) * 1973-08-31 1975-07-08 Ibm Method and apparatus for aligning electron beams
US4000440A (en) * 1974-07-26 1976-12-28 International Business Machines Corporation Method and apparatus for controlling brightness and alignment of a beam of charged particles
JPS5472980A (en) * 1977-11-24 1979-06-11 Hitachi Ltd Electron-beam drawing unit
JPS5840820B2 (ja) * 1978-04-28 1983-09-08 株式会社日立製作所 電子ビ−ム自動軸調整装置
JPS5572807A (en) * 1978-11-27 1980-06-02 Hitachi Ltd Electron-beam mask check unit

Also Published As

Publication number Publication date
EP0131699B1 (en) 1988-01-27
JPS6010720A (ja) 1985-01-19
US4568861A (en) 1986-02-04
EP0131699A1 (en) 1985-01-23
DE3469100D1 (en) 1988-03-03

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees