JPH0343236B2 - - Google Patents

Info

Publication number
JPH0343236B2
JPH0343236B2 JP59069697A JP6969784A JPH0343236B2 JP H0343236 B2 JPH0343236 B2 JP H0343236B2 JP 59069697 A JP59069697 A JP 59069697A JP 6969784 A JP6969784 A JP 6969784A JP H0343236 B2 JPH0343236 B2 JP H0343236B2
Authority
JP
Japan
Prior art keywords
furnace
compound semiconductor
temperature
boat
raw material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59069697A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60215599A (ja
Inventor
Hiroyuki Hoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP6969784A priority Critical patent/JPS60215599A/ja
Publication of JPS60215599A publication Critical patent/JPS60215599A/ja
Publication of JPH0343236B2 publication Critical patent/JPH0343236B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003Heating or cooling of the melt or the crystallised material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP6969784A 1984-04-06 1984-04-06 化合物半導体単結晶の製造方法 Granted JPS60215599A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6969784A JPS60215599A (ja) 1984-04-06 1984-04-06 化合物半導体単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6969784A JPS60215599A (ja) 1984-04-06 1984-04-06 化合物半導体単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS60215599A JPS60215599A (ja) 1985-10-28
JPH0343236B2 true JPH0343236B2 (enrdf_load_stackoverflow) 1991-07-01

Family

ID=13410307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6969784A Granted JPS60215599A (ja) 1984-04-06 1984-04-06 化合物半導体単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS60215599A (enrdf_load_stackoverflow)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS535867B2 (enrdf_load_stackoverflow) * 1973-03-08 1978-03-02
JPS5940713B2 (ja) * 1979-08-22 1984-10-02 株式会社ナシヨナルマリンプラスチツク 輸送袋

Also Published As

Publication number Publication date
JPS60215599A (ja) 1985-10-28

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