JPH0323518B2 - - Google Patents

Info

Publication number
JPH0323518B2
JPH0323518B2 JP59135771A JP13577184A JPH0323518B2 JP H0323518 B2 JPH0323518 B2 JP H0323518B2 JP 59135771 A JP59135771 A JP 59135771A JP 13577184 A JP13577184 A JP 13577184A JP H0323518 B2 JPH0323518 B2 JP H0323518B2
Authority
JP
Japan
Prior art keywords
furnace
compound semiconductor
temperature
boat
reaction vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59135771A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6114199A (ja
Inventor
Mikio Kashiwa
Seiji Mizuniwa
Hiroyuki Hoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP13577184A priority Critical patent/JPS6114199A/ja
Publication of JPS6114199A publication Critical patent/JPS6114199A/ja
Publication of JPH0323518B2 publication Critical patent/JPH0323518B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP13577184A 1984-06-29 1984-06-29 化合物半導体単結晶の製造方法 Granted JPS6114199A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13577184A JPS6114199A (ja) 1984-06-29 1984-06-29 化合物半導体単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13577184A JPS6114199A (ja) 1984-06-29 1984-06-29 化合物半導体単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS6114199A JPS6114199A (ja) 1986-01-22
JPH0323518B2 true JPH0323518B2 (enrdf_load_stackoverflow) 1991-03-29

Family

ID=15159472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13577184A Granted JPS6114199A (ja) 1984-06-29 1984-06-29 化合物半導体単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS6114199A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5186911A (en) * 1988-07-05 1993-02-16 Korea Advanced Institute Of Science And Technology Single crystal growing apparatus and method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS535867B2 (enrdf_load_stackoverflow) * 1973-03-08 1978-03-02
JPS5940713B2 (ja) * 1979-08-22 1984-10-02 株式会社ナシヨナルマリンプラスチツク 輸送袋

Also Published As

Publication number Publication date
JPS6114199A (ja) 1986-01-22

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